Ausgabe 4/2007
Inhalt (26 Artikel)
In-depth resolution for LBIC technique by two-photon absorption
D. Wan, V. Pouget, A. Douin, P. Jaulent, D. Lewis, P. Fouillat
Structural peculiarities of 4H-SiC irradiated by Bi ions
E. V. Kalinina, V. A. Skuratov, A. A. Sitnikova, E. V. Kolesnikova, A. S. Tregubova, M. P. Shcheglov
Si and Ge nanocluster formation in silica matrix
Roushdey Salh, L. Fitting, E. V. Kolesnikova, A. A. Sitnikova, M. V. Zamoryanskaya, B. Schmidt, H. -J. Fitting
Cathodoluminescence and TEM studies of HVPE GaN layers grown on porous SiC substrates
E. Kolesnikova, M. Mynbaeva, A. Sitnikova
Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO
G. Jia, T. Arguirov, M. Kittler, Z. Su, D. Yang, J. Sha
IBIC characterization of charge transport in CdTe:Cl
P. J. Sellin, A. W. Davies, F. Boroumand, A. Lohstroh, M. E. Özsan, J. Parkin, M. Veale
EBIC characterization of strained Si/SiGe heterostructures
E. B. Yakimov, R. H. Zhang, G. A. Rozgonyi, M. Seacrist
Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe
V. V. Krapukhin, P. S. Vergeles, E. B. Yakimov
EBIC measurements of small diffusion length in semiconductor structures
E. B. Yakimov, S. S. Borisov, S. I. Zaitsev
Photoinduced transient spectroscopy of defect centers in GaN and SiC
P. Kamiński, R. Kozłowski, M. Kozubal, J. Żelazko, M. Miczuga, M. Pawłowski
Micro-and nano-structures in silicon studied by DLTS and scanning probe methods
D. Cavalcoli, A. Cavallini, M. Rossi, S. Pizzini
The use of cathodoluminescence for the development of durable self-glowing crystals based on solid solutions YPO4-EuPO4
B. E. Burakov, V. M. Garbuzov, A. A. Kitsay, V. A. Zirlin, M. A. Petrova, Ya. V. Domracheva, M. V. Zamoryanskaya, E. V. Kolesnikova, M. A. Yagovkina, M. P. Orlova
STM and LEED studies of atomically ordered terraced Si(557) surfaces
A. N. Chaika, S. I. Bozhko, A. M. Ionov, A. N. Myagkov, N. V. Abrosimov
Photoluminescence study on defects in multicrystalline silicon
T. Arguirov, W. Seifer, G. Jia, M. Kittler
Material-induced shunts in multicrystalline silicon solar cells
O. Breitenstein, J. Bauer, J. P. Rakotoniaina
Mathematical simulation of the distribution of minority charge carriers generated in a multilayer semiconducting structure by a wide electron beam
I. V. Burylova, V. I. Petrov, M. G. Snopova, M. A. Stepovich
Initial stages of gold adsorption on silicon stepped surface at elevated temperatures
S. S. Kosolobov, Se Ahn Song, E. E. Rodyakina, A. V. Latyshev
Multimodal luminescence spectra of ion-implanted silica
H. -J. Fitting, Roushdey Salh, B. Schmidt
Combined CL/EBIC/DLTS investigation of a regular dislocation network formed by Si wafer direct bonding
X. Yu, O. Vyvenko, M. Kittler, W. Seifert, T. Mtchedlidze, T. Arguirov, M. Reiche
Cathodoluminescence study of silicon oxide-silicon interface
M. V. Zamoryanskaya, V. I. Sokolov
AFM investigation of thin post-baked photoresistive films for microsystem technology application
S. E. Alexandrov, A. B. Speshilova, Y. V. Soloviev, O. I. Ermeychik
Cathodoluminescence characteristics of pseudomorphic modulation-doped quantum well AlGaAs/InGaAs/AlGaAs heterostructures at high carrier densities and their radiation damaging
V. S. Khrustalev, A. V. Bobyl, S. G. Konnikov, N. A. Maleev, M. V. Zamoryanskaya
Cathodoluminescence of laser AIIBVI heterostructures
A. S. Ivanov, V. I. Vasilev, I. V. Sedova, S. V. Sorokin, A. A. Sitnikova, S. G. Konnikov, T. B. Popova, M. V. Zamoryanskaya
Evolution of luminescence properties of natural oxide on silicon and porous silicon
R. V. Sokolov, M. V. Zamoryanskaya, E. V. Kolesnikova, V. I. Sokolov
Diagnostics of films and layers of nanometer thickness using middle energy ion scattering technique
V. V. Afrosimov, R. N. Il’in, V. I. Sakharov, I. T. Serenkov
EBIC characterization of light-emitting structures based on GaN
N. M. Shmidt, P. S. Vergeles, E. B. Yakimov