Ausgabe 4/2009
Inhalt (26 Artikel)
Electrical properties of Zinc-Tin diarsenide (ZnSnAs2) irradiated with H+ ions
V. N. Brudnyi, T. V. Vedernikova
I–V characteristic of p-n structures based on a continuous solid solutions (Si2)1 − xx (CdS) x
A. S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov, K. T. Kholikov
Optical and structural characteristics of Ga-doped ZnO films
O. A. Novodvorsky, L. S. Gorbatenko, V. Ya. Panchenko, O. D. Khramova, Ye. A. Cherebilo, C. Wenzel, J. W. Bartha, V. T. Bublik, K. D. Shcherbachev
Photoelectrochemical cells based on In2S3 single crystals
V. Yu. Rud’, Yu. V. Rud’, I. V. Bodnar, T. N. Ushakova
Effect of piezoelectric fields of ultrasonic vibrations on raman scattering in GaAs/AlGaAs heterostructures
V. V. Kurylyuk, O. A. Korotchenkov
Current dependence of capacitance of germanium p +-p junctions in the temperature range of 290–330 K
N. A. Shekhovtsov
Tunneling recombination in semiconductor structures with nanoscale disorder
S. V. Bulyarski, Yu. V. Rud’, L. N. Vostretsova, A. S. Kagarmanov, O. A. Trifonov
Mechanisms of doping and the intensity of emission from intracenter f-f transitions in the doping Eu impurity in structures with In x Ga1 − x N/GaN quantum wells
M. M. Mezdrogina, V. V. Krivolapchuk, V. N. Petrov, Yu. V. Kozhanova, E. Yu. Danilovski, R. V. Kuz’min
Drift velocity of electrons in quantum wells in high electric fields
V. G. Mokerov, I. S. Vasil’evskii, G. B. Galiev, J. Požela, K. Požela, A. Sužiedėlis, V. Jucienė, Č. Paškević
Resonance enhancement of spin-polarized electron emission
L. G. Gerchikov, Yu. A. Mamaev, Yu. P. Yashin, D. A. Vasiliev, V. V. Kuz’michev, V. M. Ustinov, A. E. Zhukov, A. P. Vasiliev, V. S. Mikhrin
Visualization of localized photon modes of ZnO nanorods by scanning cathodoluminescence
A. N. Gruzintsev, G. A. Emelchenko, A. N. Redkin, W. T. Volkov, E. E. Yakimov, G. Visimberga, S. G. Romanov
Features of conductivity and photoconductivity of polymer composites containing heteropolynuclear M(II)/Cr(III) complexes
N. A. Davidenko, S. V. Dekhtyarenko, V. N. Kokozay, A. V. Kozinetz, V. V. Semenaka, V. A. Skryshevsky, O. V. Tretyak
Absorption in laser structures with coupled and uncoupled quantum dots in an electric field at room temperature
M. M. Sobolev, I. M. Gadzhiyev, I. O. Bakshaev, V. S. Mikhrin, V. N. Nevedomskiy, M. S. Buyalo, Yu. M. Zadiranov, E. L. Portnoi
Absolute negative resistance and multivaluedness on current-voltage characteristics of tunnel diodes
K. M. Aliev, I. K. Kamilov, Kh. O. Ibragimov, N. S. Abakarova
The temperature dependence of internal parameters of disc laser diodes InAs/InAsSbP
V. V. Kabanov, E. V. Lebiadok, A. G. Ryabtsev, G. I. Ryabtsev, M. A. Schemelev, V. V. Sherstnev, A. P. Astakhova, Yu. P. Yakovlev
High-voltage (1800 V) planar 4H-SiC p-n junctions with floating guard rings
P. A. Ivanov, I. V. Grekhov, N. D. Il’inskaya, T. P. Samsonova, A. S. Potapov
Array of InGaAsSb light-emitting diodes (λ = 3.7 μm)
A. L. Zakheim, N. V. Zotova, N. D. Il’inskaya, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, A. A. Usikova, A. E. Chernyakov
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
S. A. Blokhin, A. V. Sakharov, A. M. Nadtochy, A. S. Pauysov, M. V. Maximov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, V. M. Lantratov, S. A. Mintairov, N. A. Kaluzhniy, M. Z. Shvarts
High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement
A. Yu. Andreev, S. A. Zorina, A. Yu. Leshko, A. V. Lyutetskiy, A. A. Marmalyuk, A. V. Murashova, T. A. Nalet, A. A. Padalitsa, N. A. Pikhtin, D. R. Sabitov, V. A. Simakov, S. O. Slipchenko, K. Yu. Telegin, V. V. Shamakhov, I. S. Tarasov
The study of specific features of working characteristics of multicomponent heterostructures and AlInGaN-based light-emitting diodes
O. I. Rabinovich, V. P. Sushkov
Resonance detection of terahertz radiation in submicrometer field-effect GaAs/AlGaAs transistors with two-dimensional electron gas
A. V. Antonov, V. I. Gavrilenko, K. V. Maremyanin, S. V. Morozov, F. Teppe, W. Knap
GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm
A. V. Aluev, A. Yu. Leshko, A. V. Lyutetskiy, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, A. A. Chelny, V. V. Shamakhov, V. A. Simakov, I. S. Tarasov
AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
V. G. Mokerov, A. L. Kuznetsov, Yu. V. Fedorov, A. S. Bugaev, A. Yu. Pavlov, E. N. Enyushkina, D. L. Gnatyuk, A. V. Zuev, R. R. Galiev, E. N. Ovcharenko, Yu. N. Sveshnikov, A. F. Tsatsulnikov, V. M. Ustinov
Depth profiling of semiconductor structures by X-ray microanalysis using the electron probe energy variation technique
L. A. Bakaleinikov, Ya. V. Domrachova, E. V. Kolesnikova, M. V. Zamoryanskaya, T. B. Popova, E. Yu. Flegontova