Ausgabe 5/2001
Inhalt (24 Artikel)
Oscillatory “reactions” involving the oxygen and carbon background impurities in silicon undergoing heat treatment
V. V. Lukjanitsa
Thermal conductivity and the Wiedemann-Franz relation in melts of indium and gallium antimonides
Ya. B. Magomedov, A. R. Bilalov
Specific features of photoconductivity in thin n-PbTe:Ga epilayers
B. A. Akimov, V. A. Bogoyavlenskii, L. I. Ryabova, V. N. Vasil’kov
Dynamic effect of a constant electric field on the kinetics of photons interacting with electrons in a semiconductor
R. Kh. Amirov, V. N. Gusyatnikov
Studies of the infrared luminescence of ZnSe doped with copper and oxygen
N. K. Morozova, I. A. Karetnikov, V. V. Blinov, E. M. Gavrishchuk
On the origin of the luminescence band with hνm=1.5133 eV in gallium arsenide
K. D. Glinchuk, N. M. Litovchenko, A. V. Prokhorovich, O. N. Stril’chuk
BeCdSe: A new material for the active region in devices operating in the blue-green region of the spectrum
O. V. Nekrutkina, S. V. Sorokin, V. A. Kaigorodov, A. A. Sitnikova, T. V. Shubina, A. A. Toropov, S. V. Ivanov, P. S. Kop’ev, G. Reuscher, V. Wagner, J. Geurts, A. Waag, G. Landwehr
Method for determining the stoichiometric composition of a mercury cadmium telluride solid solution from capacitance-voltage characteristics
I. M. Ivankiv, A. M. Yafyasov, V. B. Bogevol’nov, A. D. Perepelkin
Mechanism of the current flow in Pd-(heavily doped p-AlxGa1−x N) ohmic contact
T. V. Blank, Yu. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. E. Nikolaev, A. V. Fomin, A. E. Cherenkov
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
V. A. Odnoblyudov, A. R. Kovsh, A. E. Zhukov, N. A. Maleev, E. S. Semenova, V. M. Ustinov
An analysis of the charge-transport mechanisms defining the reverse current-voltage characteristics of the metal-GaAs barriers
S. V. Bulyarskii, A. V. Zhukov
Photoelectric spectroscopy of InAs/GaAs quantum dot heterostructures in a semiconductor/electrolyte system
I. A. Karpovich, A. P. Gorshkov, S. B. Levichev, S. V. Morozov, B. N. Zvonkov, D. O. Filatov
Manifestation of the upper Hubbard band in the electrical conductivity of two-dimensional p-GaAs-AlGaAs structures
N. V. Agrinskaya, Yu. L. Ivanov, V. M. Ustinov, D. A. Poloskin
Superlattice conductivity under the action of a nonlinear electromagnetic wave
D. V. Zav’yalov, S. V. Kryuchkov
Nonlinear interaction of waves in a semiconductor superlattice
A. A. Bulgakov, O. V. Shramkova
The distribution function of hot charge carriers under conditions of resonance scattering
A. A. Prokof’ev, M. A. Odnoblyudov, I. N. Yassievich
Electron transport in silicon carbide natural superlattices under the Wannier-Stark quantization conditions: Basic issues and application prospects
V. I. Sankin, P. P. Shkrebii
Silicon network in a-Si:H films containing ordered inclusions
O. A. Golikova, E. V. Bogdanova, M. M. Kazanin, A. N. Kuznetsov, V. A. Terekhov, V. M. Kashkarov, O. V. Ostapenko
Excitation of luminescence in porous silicon with adsorbed ozone molecules
S. N. Kuznetsov, V. B. Pikulev, A. A. Saren, Yu. E. Gardin, V. A. Gurtov
Drift mobility of carriers in porous silicon
N. S. Averkiev, L. P. Kazakova, É. A. Lebedev, N. N. Smirnova
The effect of bombardment with carbon ions on the nanostructure of diamond-like films
I. A. Faizrakhmanov, V. V. Bazarov, V. A. Zhikharev, I. B. Khaibullin
Light emitting diodes for the spectral range λ=3.3–4.3 µm fabricated from InGaAs and InAsSbP solid solutions: Electroluminescence in the temperature range of 20–180°C (Part 2)
M. Aidaraliev, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin
A new structure of the CdS-based surface-barrier ultraviolet sensor
S. Yu. Pavelets, Yu. N. Bobrenko, A. V. Komashchenko, T. E. Shengeliya
Impact ionization wave breakdown of drift step recovery diodes
V. A. Kozlov, A. F. Kardo-Sysoev, V. I. Brylevskii