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Semiconductors

Ausgabe 5/2017

Inhalt (25 Artikel)

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Negative annealing in silicon after the implantation of high-energy sodium ions

V. M. Korol’, A. V. Zastavnoi, Yu. Kudriavtsev, R. Asomoza

Electronic Properties of Semiconductors

Ab initio calculations of phonon dispersion in CdGa2Se4

Z. A. Dzhakhangirli, T. G. Kerimova, N. A. Abdullayev, I. A. Mamedova, N. T. Mamedov

Electronic Properties of Semiconductors

Parameters of ZnO films with p-type conductivity deposited by high-frequency magnetron sputtering

M. M. Mezdrogina, A. Ya. Vinogradov, V. S. Levitskii, E. E. Terukova, Yu. V. Kozhanova, A. S. Aglikov

Electronic Properties of Semiconductors

Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs

N. N. Ageeva, I. L. Bronevoi, D. N. Zabegaev, A. N. Krivonosov

Spectroscopy, Interaction with Radiation

Optical an photoelectric properties odf ZnSe:Ti crystals

Yu. A. Nitsuk, Yu. F. Vaksman

Spectroscopy, Interaction with Radiation

Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method

A. A. Zarubanov, V. F. Plyusnin, K. S. Zhuravlev

Surfaces, Interfaces, and Thin Films

Modification of the surface of GaAs and observation of surface enhanced Raman scattering after the diffusion of indium

A. S. Vlasov, L. B. Karlina, F. E. Komissarenko, A. V. Ankudinov

Surfaces, Interfaces, and Thin Films

Morphology, optical, and adsorption properties of copper-oxide layers deposited from complex compound solutions

L. B. Matyushkin, A. A. Reshetnikova, A. O. Andronov, P. K. Afonicheva, S. V. Myakin, N. V. Permiakov, V. A. Moshnikov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Origin of discrepancies in the experimental values of the barrier height at metal–semiconductor junctions

Sh. Q. Askerov, L. K. Abdullayeva, M. H. Hasanov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Specific features of ballistic electron transport in double-level open systems in a large-amplitude high-frequency electric field

A. B. Pashkovskii

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Injection-induced terahertz electroluminescence from silicon p–n structures

A. O. Zakhar’in, Yu. B. Vasilyev, N. A. Sobolev, V. V. Zabrodskii, S. V. Egorov, A. V. Andrianov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Characteristics of the Schottky barriers of two-terminal thin-film Al/nano-Si film/ITO structures

N. N. Kononov, S. G. Dorofeev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Electronic structure of single-layer superlattices (GeC)1(SiC)1, (SnC)1(SiC)1, and (SnC)1(GeC)1

Yu. M. Basalaev, E. N. Malysheva

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution method in a silicon crystal lattice

A. S. Grashchenko, N. A. Feoktistov, A. V. Osipov, E. V. Kalinina, S. A. Kukushkin

Amorphous, Vitreous, and Organic Semiconductors

Energy transfer from TPD to CdSe/CdS/ZnS colloidal nanocrystals

N. S. Kurochkin, A. V. Katsaba, S. A. Ambrozevich, A. G. Vitukhnovsky, A. A. Vashchenko, P. N. Tananaev

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

On the photoconductivity of TlInSe2

N. D. Ismailov, Ch. I. Abilov, M. S. Gasanova

Physics of Semiconductor Devices

Laser (λ = 809 nm) power converter based on GaAs

V. P. Khvostikov, S. V. Sorokina, N. S. Potapovich, O. A. Khvostikova, N. Kh. Timoshina

Physics of Semiconductor Devices

Study of the voltage drop process for the case of high-power thyristors switched in the impact-ionization mode

A. I. Gusev, S. K. Lyubutin, S. N. Rukin, S. N. Tsyranov

Physics of Semiconductor Devices

Experimental and theoretical studies of the characteristics of position-sensitive photodetectors based on n-CdSe/mica epitaxial layers

E. A. Senokosov, V. I. Chukita, R. A. Khamidullin, V. N. Cheban, I. N. Odin, M. V. Chukichev

Physics of Semiconductor Devices

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasilnik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskiy

Physics of Semiconductor Devices

Formation of a p-type emitter with the involvement of surfactants in GaAs photoelectric converters

L. B. Karlina, A. S. Vlasov, B. Ya. Ber, D. Yu. Kazantsev, N. Kh. Timoshina, M. M. Kulagina, A. B. Smirnov

Fabrication, Treatment, and Testing of Materials and Structures

InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD

S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, A. M. Nadtochiy, V. N. Nevedomskiy, A. E. Zhukov

Fabrication, Treatment, and Testing of Materials and Structures

Ab initio studies of structural, electronic, optical, elastic and thermal properties of CuGaTe2

Pravesh Singh, Sheetal Sharma, Sarita Kumari, Vibhav K. Saraswat, D. Sharma, A. S. Verma

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