Ausgabe 6/2004
Inhalt (20 Artikel)
A study of recombination centers in irradiated p-Si crystals
T. A. Pagava
Long-wavelength edge of the spectrum of hot electron-hole plasma radiation in photoexcited indium arsenide
E. Shatkovskis, A. Česnys
A protrusion in the absorption spectra of GaAs excited by high-power picosecond light pulses
G. S. Altybaev, I. L. Bronevoi, S. E. Kumekov
Photosensitive polyimides containing substituted diphenylmethane fragments in the backbone
E. L. Aleksandrova, G. I. Nosova, N. A. Solovskaya, K. A. Romashkova, V. A. Luk’yashina, E. V. Konozobko, V. V. Kudryavtsev
Analysis of polarization modulation spectra of photopleochroism induced by uniaxial compression in Ge crystals
I. E. Matyash, B. K. Serdega
Physical mechanisms of laser correction and stabilization of the parameters of Al-n-n +-Si-Al schottky barrier structures
G. I. Vorobets, M. M. Vorobets, V. N. Strebezhev, E. V. Buzaneva, A. G. Shkavro
Slow relaxation of conductance of quasi-two-dimensional highly disordered MIS structures
A. B. Davydov, B. A. Aronzon
Fabrication and properties of an n-ZnO:Ga/p-GaN:Mg/α-Al2O3 heterojunction
B. M. Ataev, Ya. I. Alivov, V. V. Mamedov, S. Sh. Makhmudov, B. A. Magomedov
High-frequency barrier capacitance of metal-semiconductor contacts and abrupt p-n junctions
V. I. Murygin
Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
W. V. Lundin, A. V. Sakharov, A. F. Tsatsul’nikov, E. E. Zavarin, A. I. Besyul’kin, A. V. Fomin, D. S. Sizov
Structural defects at the semiconductor-ferroelectric interface
L. S. Berman, I. E. Titkov
Electron-electron scattering in stepped quantum wells
V. L. Zerova, L. E. Vorob’ev, G. G. Zegrya
Spectroscopy of exciton states of InAs quantum molecules
V. G. Talalaev, J. W. Tomm, N. D. Zakharov, P. Werner, B. V. Novikov, G. É. Cirlin, Yu. B. Samsonenko, A. A. Tonkikh, V. A. Egorov, N. K. Polyakov, V. M. Ustinov
Role of Si-doped Al0.3Ga0.7As layers in the high-frequency conductivity of GaAs/Al0.3Ga0.7As heterostructures under conditions of the quantum hall effect
I. L. Drichko, A. M. D’yakonov, I. Yu. Smirnov, Yu. M. Gal’perin, V. V. Preobrazhenskii, A. I. Toropov
Formation of thick porous silicon layers with insufficient minority carrier concentration
D. N. Goryachev, L. V. Belyakov, O. M. Sreseli
Transformation of a short-wavelength emission band of a double-charged intrinsic acceptor into a long-wavelength band in GaSb-based LEDs
E. A. Grebenshchikova, A. N. Imenkov, B. E. Zhurtanov, T. N. Danilova, M. A. Sipovskaya, N. V. Blasenko, Yu. P. Yakovlev
Soft breakdown as a cause of current drop in an MOS tunnel structure
A. F. Shulekin, S. É. Tyaginov, R. Khlil, A. El Hdiy, M. I. Vexler
Electroluminescent studies of emission characteristics of InGaAsN/GaAs injection lasers in a wide temperature range
L. Ya. Karachinsky, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, A. R. Kovsh, J. S. Wang, R. S. Hsiao, J. Y. Chi, V. M. Ustinov, N. N. Ledentsov
High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
M. V. Maksimov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. G. Gladyshev, Yu. G. Musikhin, N. N. Ledentsov, A. E. Zhukov, A. P. Vasil’ev, A. R. Kovsh, S. S. Mikhrin, E. S. Semenova, N. A. Maleev, E. V. Nikitina, V. M. Ustinov, Zh. I. Alferov