Ausgabe 6/2011
Inhalt (25 Artikel)
Model of boron diffusion from gas phase in silicon carbide
O. V. Aleksandrov, E. N. Mokhov
Electronic structure and spectral characteristics of Zn-substituted clathrate silicides
N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii
Energy of impurity resonance states in lead telluride with different contents of thallium impurity
S. A. Nemov, Yu. I. Ravich, V. A. Korchagin
Vacancy model of micropipe annihilation in epitaxial silicon carbide layers
S. Yu. Davydov, A. A. Lebedev
Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters
A. V. Ershov, D. I. Tetelbaum, I. A. Chugrov, A. I. Mashin, A. N. Mikhaylov, A. V. Nezhdanov, A. A. Ershov, I. A. Karabanova
Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures
K. D. Shcherbachev, V. T. Bublik, V. N. Mordkovich, D. M. Pazhin
Resonance propagation of electrons through three-barrier structures in a two-frequency electric field
A. B. Pashkovskii
Physical properties of SnS thin films fabricated by hot wall deposition
S. A. Bashkirov, V. F. Gremenok, V. A. Ivanov
Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures
V. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich, B. Ya. Ber, D. Yu. Kazantsev
Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields
J. Požela, K. Požela, R. Raguotis, V. Jucienė
Excitonic spectrum of the ZnO/ZnMgO quantum wells
M. A. Bobrov, A. A. Toropov, S. V. Ivanov, A. El-Shaer, A. Bakin, A. Waag
Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys
K. D. Moiseev, V. P. Lesnikov, V. V. Podolski, Yu. Kudriavtsev, O. Kudriavtseva, A. Escobosa, V. Sanchez-Resendiz
Circular polarization of the photoluminescence from a system of two-dimensional A + centers in a magnetic field
P. V. Petrov, Yu. L. Ivánov, N. S. Averkiev
Impurity centers of tin in glassy arsenic chalcogenides
G. A. Bordovsky, A. Yu. Dashina, A. V. Marchenko, P. P. Seregin, E. I. Terukov
Anomalous long-term degradation of photoluminescence in porous silicon layers
D. F. Timokhov, F. P. Timokhov
High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems
V. P. Khvostikov, A. S. Vlasov, S. V. Sorokina, N. S. Potapovich, N. Kh. Timoshina, M. Z. Shvarts, V. M. Andreev
Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells
O. Ya. Olikh
Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology
A. M. Emel’yanov
Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds
P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, O. I. Ronghin, A. A. Sitnikova, A. A. Shakhmin, B. Ya. Ber, D. Yu. Kazantsev, A. Yu. Egorov, V. E. Zemlyakov, S. G. Konnikov
Matrices of 960-nm vertical-cavity surface-emitting lasers
N. A. Maleev, A. G. Kuzmenkov, A. S. Shulenkov, S. A. Blokhin, M. M. Kulagina, Yu. M. Zadiranov, V. G. Tikhomirov, A. G. Gladyshev, A. M. Nadtochiy, E. V. Nikitina, J. A. Lott, V. N. Svede-Shvets, N. N. Ledentsov, V. M. Ustinov
Fabrication of ordered GaAs nanowhiskers using electron-beam lithography
I. P. Soshnikov, D. E. Afanas’ev, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya, Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov, V. M. Ustinov
Fabrication of improved-quality seed crystals for growth of bulk silicon carbide
M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova, D. P. Litvin, A. V. Vasiliev, T. Yu. Chemekova, Yu. N. Makarov
A Comment to the paper by E.A. Tatokhin, A.V. Kadantsev, A.E. Bormontov, and V.G. Zadorozhniy “a statistical method of deep-level transient spectroscopy in semiconductors”
N. A. Yarykin
Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”
N. A. Vlasenko, P. F. Oleksenko, Z. L. Denisova, N. V. Sopinskii, L. I. Veligura, E. G. Gule, O. S. Litvin, M. A. Mukhlyo