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Semiconductors

Ausgabe 6/2011

Inhalt (25 Artikel)

Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)

Model of boron diffusion from gas phase in silicon carbide

O. V. Aleksandrov, E. N. Mokhov

Electronic Properties of Semiconductors

Electronic structure and spectral characteristics of Zn-substituted clathrate silicides

N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii

Electronic Properties of Semiconductors

Energy of impurity resonance states in lead telluride with different contents of thallium impurity

S. A. Nemov, Yu. I. Ravich, V. A. Korchagin

Electronic Properties of Semiconductors

Vacancy model of micropipe annihilation in epitaxial silicon carbide layers

S. Yu. Davydov, A. A. Lebedev

Spectroscopy, Interaction with Radiation

Annealing-induced evolution of optical properties of the multilayered nanoperiodic SiO x /ZrO2 system containing Si nanoclusters

A. V. Ershov, D. I. Tetelbaum, I. A. Chugrov, A. I. Mashin, A. N. Mikhaylov, A. V. Nezhdanov, A. A. Ershov, I. A. Karabanova

Spectroscopy, Interaction with Radiation

Specific features of formation of radiation defects in the silicon layer in “silicon-on-insulator” structures

K. D. Shcherbachev, V. T. Bublik, V. N. Mordkovich, D. M. Pazhin

Surfaces, Interfaces, and Thin Films

Physical properties of SnS thin films fabricated by hot wall deposition

S. A. Bashkirov, V. F. Gremenok, V. A. Ivanov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Evolution of the deformation state and composition as a result of changes in the number of quantum wells in multilayered InGaN/GaN structures

V. P. Kladko, A. V. Kuchuk, N. V. Safriuk, V. F. Machulin, A. E. Belyaev, R. V. Konakova, B. S. Yavich, B. Ya. Ber, D. Yu. Kazantsev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Drift velocity of electrons in quantum wells of selectively doped In0.5Ga0.5As/Al x In1 − x As and In0.2Ga0.8As/Al x Ga1 − x As heterostructures in high electric fields

J. Požela, K. Požela, R. Raguotis, V. Jucienė

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Excitonic spectrum of the ZnO/ZnMgO quantum wells

M. A. Bobrov, A. A. Toropov, S. V. Ivanov, A. El-Shaer, A. Bakin, A. Waag

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Features of obtaining diluted magnetic semiconductors in the system of narrow-gap GaInAsSb alloys

K. D. Moiseev, V. P. Lesnikov, V. V. Podolski, Yu. Kudriavtsev, O. Kudriavtseva, A. Escobosa, V. Sanchez-Resendiz

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Circular polarization of the photoluminescence from a system of two-dimensional A + centers in a magnetic field

P. V. Petrov, Yu. L. Ivánov, N. S. Averkiev

Amorphous, Vitreous, and Organic Semiconductors

Impurity centers of tin in glassy arsenic chalcogenides

G. A. Bordovsky, A. Yu. Dashina, A. V. Marchenko, P. P. Seregin, E. I. Terukov

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Anomalous long-term degradation of photoluminescence in porous silicon layers

D. F. Timokhov, F. P. Timokhov

Physics of Semiconductor Devices

High-efficiency (η = 39.6%, AM 1.5D) cascade of photoconverters in solar splitting systems

V. P. Khvostikov, A. S. Vlasov, S. V. Sorokina, N. S. Potapovich, N. Kh. Timoshina, M. Z. Shvarts, V. M. Andreev

Physics of Semiconductor Devices

Electrochemical capacitance-voltage profiling of the free-carrier concentration in HEMT heterostructures based on InGaAs/AlGaAs/GaAs compounds

P. N. Brunkov, A. A. Gutkin, M. E. Rudinsky, O. I. Ronghin, A. A. Sitnikova, A. A. Shakhmin, B. Ya. Ber, D. Yu. Kazantsev, A. Yu. Egorov, V. E. Zemlyakov, S. G. Konnikov

Physics Of Semiconductor Devices

Matrices of 960-nm vertical-cavity surface-emitting lasers

N. A. Maleev, A. G. Kuzmenkov, A. S. Shulenkov, S. A. Blokhin, M. M. Kulagina, Yu. M. Zadiranov, V. G. Tikhomirov, A. G. Gladyshev, A. M. Nadtochiy, E. V. Nikitina, J. A. Lott, V. N. Svede-Shvets, N. N. Ledentsov, V. M. Ustinov

Fabrication, Treatment, and Testing of Materials and Structures

Fabrication of ordered GaAs nanowhiskers using electron-beam lithography

I. P. Soshnikov, D. E. Afanas’ev, G. E. Cirlin, V. A. Petrov, E. M. Tanklevskaya, Yu. B. Samsonenko, A. D. Bouravlev, A. I. Khrebtov, V. M. Ustinov

Fabrication, Treatment, and Testing of Materials and Structures

Fabrication of improved-quality seed crystals for growth of bulk silicon carbide

M. G. Mynbaeva, P. L. Abramov, A. A. Lebedev, A. S. Tregubova, D. P. Litvin, A. V. Vasiliev, T. Yu. Chemekova, Yu. N. Makarov

Personalia

Yurii Aronovich Goldberg (1939–2011)

O. V. Konstantinov, A. M. Samsonov

Errata

Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films”

N. A. Vlasenko, P. F. Oleksenko, Z. L. Denisova, N. V. Sopinskii, L. I. Veligura, E. G. Gule, O. S. Litvin, M. A. Mukhlyo

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