Ausgabe 6/2014
Inhalt (25 Artikel)
On the possibility of spinodal decomposition in the transition layer of a heterostructure based on silicon-carbide polytypes
S. Yu. Davydov, A. A. Lebedev
Magnetic properties of (FeIn2S4)1 − x (CuIn5S8) x single-crystal alloys
I. V. Bodnar, S. V. Trukhanov
Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition
I. V. Mirgorodskiy, L. A. Golovan, V. Yu. Timoshenko, A. V. Semenov, V. M. Puzikov
Optical properties and electronic structure of mercury iodide
V. V. Sobolev, V. Val. Sobolev, D. V. Anisimov
Change in the charge and defect-impurity state of silicon for solar-power engineering under the effect of a magnetic field
V. A. Makara, L. P. Steblenko, O. A. Korotchenkov, A. B. Nadtochiy, D. V. Kalinichenko, A. N. Kuryliuk, Yu. L. Kobzar, A. N. Krit, S. N. Naumenko
Specific features of the low-temperature conductivity and photoconductivity of CuInSe2-ZnIn2Se4 alloys
V. V. Bozhko, O. V. Novosad, O. V. Parasyuk, N. Vainorius, A. Sakaviciues, V. Janonis, V. Kazukauskas, A. V. Chichurin
On InAsSbP epitaxial layers with ultimate phosphorus content, lattice-matched with an InAs substrate
V. V. Romanov, M. V. Baidakova, K. D. Moiseev
Properties of TiO2 films on silicon substrate
V. M. Kalygina, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, E. V. Chernikov, S. Yu. Tcupiy, T. M. Yaskevich
Effect of ion-beam treatment during reactive high-frequency magnetron sputtering on macrostresses in ITO films
P. N. Krylov, R. M. Zakirova, I. V. Fedotova
Magnetoresistance of layered semiconductors upon the scattering of charge carriers at impurity ions in a parallel magnetic field
B. M. Askerov, S. R. Figarova, H. I. Huseynov, V. R. Figarov
Evaluation of the quality of GaAs epitaxial layers and their interfaces from analysis of the exciton absorption spectra
N. R. Grigorieva, A. Yu. Egorov, D. A. Zaitsev, E. V. Nikitina, R. P. Seisyan
Influence of the stark effect on the resonance excitation transfer between quantum dots
P. A. Golovinskii
CdHgTe heterostructures on large-area Si(310) substrates for infrared photodetector arrays of the short-wavelength spectral range
M. V. Yakushev, V. S. Varavin, V. G. Remesnik, D. V. Marin
Influence of the nonequilibrium-carrier concentration on the hall voltage in a p-type semiconductor
A. Konin
On the photopleochroism coefficient and its temperature dynamics in native oxide-p-InSe heterojunctions
V. M. Katerynchuk, Z. R. Kudrynskyi, Z. D. Kovalyuk
Features of the spin-lattice relaxation of nuclear spins 63,65Cu in the CuAlO2 semiconductor compound
V. L. Matukhin, D. A. Shulgin, S. V. Shmidt, E. I. Terukov
On the size distribution in three-dimensional quantum-dot crystals
R. D. Vengrenovich, B. V. Ivanskii, M. O. Stasyk, I. I. Panko
Electrical properties of a SiC-Si multilayer structure
V. B. Bozhevol’nov, A. M. Yafyasov, V. Yu. Miailovskii, Yu. V. Egorova, A. A. Sokolov, E. O. Filatova
Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors
R. I. Alekberov, A. I. Isayev, S. I. Mekhtiyeva, G. A. Isayeva
Raman scattering in As-Se-S and As-Se-Te Chalcogenide vitreous semiconductors
R. I. Alekberov, S. I. Mekhtiyeva, G. A. Isayeva, A. I. Isayev
Comparison of various methods for transferring graphene and few layer graphene grown by chemical vapor deposition to an insulating SiO2/Si substrate
I. V. Antonova, S. V. Golod, R. A. Soots, A. I. Komonov, V. A. Seleznev, M. A. Sergeev, V. A. Volodin, V. Ya. Prinz
Comparative investigation of InP/InGaAs heterostructure-emitter tunneling and superlattice bipolar transistors
Jung-Hui Tsai, Ching-Sung Lee, Chung-Cheng Chiang, Yi-Ting Chao
Chemical and phase composition of GaMnAs/GaAs/InGaAs spin light-emitting diodes
D. E. Nikolichev, A. V. Boryakov, S. Yu. Zubkov, R. N. Kryukov, M. V. Dorokhin, A. V. Kudrin
On the diffusion growth mechanism of semiconductor nanowires with the participation of hot atoms
M. V. Grankin, A. I. Bazhyn, D. V. Grankin
Features of the two-component decomposition of monosilane molecules on a silicon surface under epitaxial-process conditions
N. L. Ivina, L. K. Orlov