Ausgabe 6/2015
Inhalt (25 Artikel)
Low-temperature conductivity of silicon doped with antimony
A. K. Fedotov, I. A. Svito, V. V. Fedotova, A. G. Trafimenko, A. L. Danilyuk, S. L. Prischepa
Interstitial carbon formation in irradiated copper-doped silicon
N. A. Yarykin, J. Weber
Effect of copper on the recombination activity of extended defects in silicon
O. V. Feklisova, E. B. Yakimov
EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon
V. I. Orlov, O. V. Feklisova, E. B. Yakimov
Recombination activity of interfaces in multicrystalline silicon
S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova
Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties
H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, N. M. Lyadov, V. A. Shustov, K. N. Galkin, N. G. Galkin, I. M. Chernev, G. D. Ivlev, S. L. Prokop’ev, P. I. Gaiduk
Aluminoborosilicate glasses codoped with rare-earth elements as radiation-protective covers for solar cells
E. V. Malchukova, A. S. Abramov, A. I. Nepomnyashchikh, E. I. Terukov
Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents
Ya. L. Shabelnikova, E. B. Yakimov, D. P. Nikolaev, M. V. Chukalina
Study of the properties of silicon-based semiconductor converters for betavoltaic cells
M. A. Polikarpov, E. B. Yakimov
Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation
Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya, V. A. Armbrister, V. A. Zinovyev, N. P. Stepina, A. F. Zinovieva, A. V. Nenashev, A. K. Gutakovskii
Si(hhm) surfaces: Templates for developing nanostructures
S. I. Bozhko, A. M. Ionov, A. N. Chaika
Specific features of Hall measurements in doped semiconductors
V. F. Bannaya
On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level
V. M. Boiko, V. N. Brudnii, V. S. Ermakov, N. G. Kolin, A. V. Korulin
The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb2Te3 and Bi2Se3
V. A. Kulbachinskii, A. A. Kudryashov, V. G. Kytin
On the effect of bias on the behavior of MOS structures subjected to ionizing radiation
O. V. Aleksandrov
Influence of substrate temperature on structural and optical properties of RF sputtered ZnMnO thin films
Parisa Pashaei, Nihan Akin, U. Ceren Baskose, M. Kemal Ozturk, Mehmet Cakmak, Suleyman Ozcelik
Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation
V. A. Kukushkin, N. V. Baidus, A. V. Zdoroveishchev
Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides
E. D. Mishina, N. E. Sherstyuk, A. P. Shestakova, S. D. Lavrov, S. V. Semin, A. S. Sigov, A. Mitioglu, S. Anghel, L. Kulyuk
Holes localized in nanostructures in an external magnetic field: g-factor and mixing of states
M. A. Semina, R. A. Suris
Wannier-Mott excitons in semiconductors with a superlattice
R. A. Suris
Application of the wavelet transform to the problem of the detection and determination of the Lorentzian positions of the 2D band in the Raman spectrum of bilayer graphene
T. E. Timofeeva, S. A. Smagulova, V. I. Popov
On the tensosensitivity of a p-n junction under illumination
G. Gulyamov, A. G. Gulyamov
High-efficiency plasma treatment for surface modification of LPCVD ZnO
D. Andronikov, A. Abramov, E. Terukov, A. Vinogradov, A. Ankudinov, V. Afanasjev
Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs
N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. S. Kogotkov, Yu. T. Rebane, M. V. Virko, Y. G. Shreter
Effect of different loss mechanisms in SiGeSn based mid-infrared laser
Vedatrayee Chakraborty, Bratati Mukhopadhyay, P. K. Basu