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Zeitschrift

Semiconductors

Semiconductors 6/2020

Ausgabe 6/2020

Inhaltsverzeichnis ( 16 Artikel )

01.06.2020 | ELECTRONIC PROPERTIES OF SEMICONDUCTORS | Ausgabe 6/2020

Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions

R. M. Sardarly, F. T. Salmanov, N. A. Aliyeva, R. M. Abbasli

01.06.2020 | ELECTRONIC PROPERTIES OF SEMICONDUCTORS | Ausgabe 6/2020

Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field

V. T. Avanesyan, A. B. Zharkoy, A. V. Rakina

01.06.2020 | ELECTRONIC PROPERTIES OF SEMICONDUCTORS | Ausgabe 6/2020

AC Electrical Conductivity of FeGaInSe4

N. N. Niftiyev, F. M. Mammadov, M. B. Muradov

01.06.2020 | SURFACES, INTERFACES, AND THIN FILMS | Ausgabe 6/2020

Optical Properties and Critical Points of PbSe Nanostructured Thin Films

M. N. Huseynaliyev, S. N. Yasinova, D. N. Jalilli, S. I. Mekhtiyeva

01.06.2020 | SURFACES, INTERFACES, AND THIN FILMS | Ausgabe 6/2020

Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes

V. L. Priya, N. Prithivikumaran

01.06.2020 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 6/2020

Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping

A. E. Galashev, A. S. Vorob’ev

01.06.2020 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 6/2020

MBE-Grown InxGa1 –xAs Nanowires with 50% Composition

V. G. Dubrovskii, R. R. Reznik, N. V. Kryzhanovskaya, I. V. Shtrom, E. D. Ubyivovk, I. P. Soshnikov, G. E. Cirlin

01.06.2020 | AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS | Ausgabe 6/2020

Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite

D. V. Amasev, V. G. Mikhalevich, A. R. Tameev, Sh. R. Saitov, A. G. Kazanskii

01.06.2020 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS | Ausgabe 6/2020

Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures

V. A. Shutaev, E. A. Grebenshchikova, V. G. Sidorov, M. E. Kompan, Yu. P. Yakovlev

01.06.2020 | CARBON SYSTEMS | Ausgabe 6/2020

Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction

E. V. Rut’kov, E. Yu. Afanas’eva, N. R. Gall

01.06.2020 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 6/2020

Correcting the Characteristics of Silicon Photodiodes by Ion Implantation

V. E. Asadchikov, I. G. Dyachkova, D. A. Zolotov, F. N. Chukhovskii, E. V. Nikitina

01.06.2020 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 6/2020

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

L. K. Markov, I. P. Smirnova, M. V. Kukushkin, A. S. Pavluchenko

01.06.2020 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 6/2020

Ultimate Lasing Temperature of Microdisk Lasers

A. E. Zhukov, N. V. Kryzhanovskaya, E. I. Moiseev, M. M. Kulagina, S. A. Mintairov, N. A. Kalyuzhnyy, A. M. Nadtochiy, M. V. Maximov

01.06.2020 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 6/2020

Solar-Blind UV Detectors Based on β-Ga2O3 Films

V. M. Kalygina, A. V. Almaev, V. A. Novikov, Yu. S. Petrova

01.06.2020 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 6/2020

Silicon Light-Emitting Diodes with Luminescence from (113) Defects

A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev, V. V. Zabrodskii, K. V. Karabeshkin, E. I. Shek, N. A. Sobolev

01.06.2020 | FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES | Ausgabe 6/2020

Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study

J. Laifi, A. Bchetnia

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