Semiconductors

Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations

G. B. Galiev, V. É. Kaminskii, V. G. Mokerov, V. K. Nevolin, V. V. Saraikin, Yu. V. Slepnev

The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek

The role of nonequilibrium carriers in linear charge transport (Ohm’s law)

Yu. G. Gurevich, G. N. Logvinov, G. Espejo, O. Yu. Titov, A. Meriuts

Liquid phase reflectivity under conditions of laser-induced silicon melting

G. D. Ivlev, E. I. Gatskevich

Far infrared stimulated and spontaneous radiation in uniaxially deformed zero-gap Hg1−x CdxTe

E. F. Venger, S. G. Gasan-zade, M. V. Strikha, S. V. Staryi, G. A. Shepel’skii

Hysteresis of magnetoresistance in neutron-transmutation-doped Ge in the region of hopping transport over the Coulomb-gap states

A. G. Andreev, S. V. Egorov, A. G. Zabrodskii, R. V. Parfen’ev, A. V. Chernyaev

The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures

M. I. Vexler, I. V. Grekhov, A. F. Shulekin

Photosensitivity of structures based on ZnSe single crystals

G. A. Il’chuk, V. Yu. Rud’, Yu. V. Rud’, R. N. Bekimbetov, V. I. Ivanov-Omskii, N. A. Ukrainets

Analysis of charges and surface states at the interfaces of semiconductor-insulator-semiconductor structures

L. S. Berman, E. I. Belyakova, L. S. Kostina, E. D. Kim, S. C. Kim

Polarization photosensitivity of a-Si:H/c-Si heterojunctions

Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov

Photosensitivity of In-SiO2-Cd0.28Hg0.72Te structures with a nontransparent field electrode

V. N. Ovsyuk, V. V. Vasil’ev, Yu. P. Mashukov

The hall effect in Fe submonolayer systems on n-and p-type Si(111)

N. G. Galkin, D. L. Goroshko, A. V. Konchenko, E. S. Zakharova, S. Ts. Krivoshchapov

Negative differential conductance and the bloch oscillations in the natural superlattice of 8H silicon carbide polytype

V. I. Sankin, A. A. Lepneva

Plasma oscillations in two-dimensional semiconductor superstructures

S. Yu. Glazov, S. V. Kryuchkov

Study of multilayer structures with InAs nanoobjects in a silicon matrix

V. N. Petrov, N. K. Polyakov, V. A. Egorov, G. E. Cirlin, N. D. Zakharov, P. Werner, V. M. Ustinov, D. V. Denisov, N. N. Ledentsov, Zh. I. Alferov

Impurity absorption of light in confined systems subjected to a longitudinal magnetic field

É. P. Sinyavskii, S. M. Sokovnich

Charge carrier interference in one-dimensional semiconductor rings

N. T. Bagraev, A. D. Buravlev, V. K. Ivanov, L. E. Klyachkin, A. M. Malyarenko, S. A. Rykov, I. A. Shelykh

Simulation of photochemical transformations and photodarkening in photoresist films exposed to pulsed vacuum-ultraviolet radiation

N. A. Kaliteevskaya, R. P. Seisyan

The influence of erbium on electrical and photoelectric properties of amorphous silicon produced by radio-frequency silane decomposition

E. I. Terukov, M. M. Kazanin, O. I. Kon’kov, V. Kh. Kudoyarova, K. V. Kougiya, Yu. A. Nikulin, A. G. Kazanskii

Fringing field of high-voltage planar p-i-n diodes with a nonuniformly doped guard ring

A. S. Kyuregyan

Study of the effect of graded gap epilayers on the performance of CdxHg1−x Te photodiodes

V. V. Vasil’ev, D. G. Esaev, A. F. Kravchenko, V. M. Osadchii, A. O. Suslyakov

InGaAsSb(Gd)/InAsSbP double heterostructure lasers (λ=3.0–3.3 µm) for diode laser spectroscopy

M. Aidaraliev, T. Beyer, N. V. Zotova, S. A. Karandashev, B. A. Matveev, M. A. Remennyi, N. M. Stus’, G. N. Talalakin

Properties of wide-mesastripe InGaAsP/InP lasers

E. G. Golikova, V. A. Kureshov, A. Yu. Leshko, A. V. Lyutetskii, N. A. Pikhtin, Yu. A. Ryaboshtan, G. A. Skrynnikov, I. S. Tarasov, Zh. I. Alferov

Zhores Ivanovich Alferov (dedicated to his 70th birthday)