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Semiconductors

Ausgabe 7/2003

Inhalt (25 Artikel)

Conference. Electronic and Optical Properties of Semiconductors

Electron diffraction investigation of structural diversity of amorphous films of polymorphic TlInS2

D. I. Ismailov, M. V. Alieva, E. Sh. Alekperov, F. I. Aliev

Conference. Electronic and Optical Properties of Semiconductors

The influence of a high and low content of Au impurity on the photoluminescence of stoichiometric and nonstoichiometric arsenic sulfide

A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, I. N. Trapeznikova

Conference. Electronic and Optical Properties of Semiconductors

Spectra of fundamental optical functions of BeSe

V. Val. Sobolev, V. V. Sobolev

Conference. Electronic and Optical Properties of Semiconductors

Optical properties of imperfect In2Se3

V. Val. Sobolev, V. V. Sobolev

Conference. Semiconductor Structures, Interfaces, and Surfaces

Spectral photosensitivity of a-SiGe:H/c-Si heterostructures

A. A. Sherchenkov

Conference. Amorphous, Vitreous, and Porous Semiconductors

Photoinduced conductivity change in erbium-doped amorphous hydrogenated silicon films

A. G. Kazanskii, H. Mell, E. I. Terukov, P. A. Forsh

Conference. Amorphous, Vitreous, and Porous Semiconductors

On studying nanoporous-carbon-based composites by small-angle X-ray scattering

É. A. Smorgonskaya

Conference. Amorphous, Vitreous, and Porous Semiconductors

Fullerene single crystals as adsorbents of organic compounds

V. I. Berezkin, I. V. Viktorovskii, A. Ya. Vul’, L. V. Golubev, V. N. Petrova, L. O. Khoroshko

Conference. Amorphous, Vitreous, and Porous Semiconductors

X-raying studies of the nanoporous carbon structure produced from carbide materials

R. N. Kyutt, A. M. Danishevskii, É. A. Smorgonskaya, S. K. Gordeev

Conference. Amorphous, Vitreous, and Porous Semiconductors

The influence of deposition conditions and alloying on the electronic properties of amorphous selenium

S. O. Kasap, K. V. Koughia, B. Fogal, G. Belev, R. E. Johanson

Conference. Amorphous, Vitreous, and Porous Semiconductors

Synthesis and physical properties of Si(Ge)-Se-Te glasses

L. A. Kulakova, B. T. Melekh, V. I. Bakharev, V. Kh. Kudoyarova

Conference. Amorphous, Vitreous, and Porous Semiconductors

Effect of rare-earth impurities on the photoluminescence of Ge2S3 glass

A. A. Babaev, I. K. Kamilov, Z. V. Vagabova, S. M. Sultanov, A. M. Askhabov, E. I. Terukov, I. N. Trapeznikova

Conference. Amorphous, Vitreous, and Porous Semiconductors

Influence of the order-disorder transition in the crystal electron subsystem on the electron density at lattice sites

N. P. Seregin, T. R. Stepanova, Yu. V. Kozhanova, V. P. Volkov, P. P. Seregin, N. N. Troitskaya

Conference. Amorphous, Vitreous, and Porous Semiconductors

Organic materials for photovoltaic and light-emitting devices

T. A. Yourre, L. I. Rudaya, N. V. Klimova, V. V. Shamanin

Conference. Amorphous, Vitreous, and Porous Semiconductors

Optical and electrical properties of polyamide acid and metal-polymer complex based on terbium

É. A. Lebedev, M. Ya. Goikhman, M. E. Kompan, V. Kh. Kudoyarova, I. V. Podeshvo, E. I. Terukov, V. V. Kudryavtsev

Conference. Amorphous, Vitreous, and Porous Semiconductors

Photosensitivity of new photoconductive polymers based on ruthenium-biquinolyl complexes

E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, I. V. Gofman, V. V. Kudryavtsev

Conference. Amorphous, Vitreous, and Porous Semiconductors

Optical and photosensitive properties of comb-shaped polyamide-imides

E. L. Aleksandrova, M. Ya. Goikhman, L. I. Subbotina, K. A. Romashkova, I. F. Gofman, V. V. Kudryavtsev, A. V. Yakimanskii

Conference. Amorphous, Vitreous, and Porous Semiconductors

A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering

Yu. K. Undalov, E. I. Terukov, O. B. Gusev, V. Kh. Kudoyarova

Conference. Physics of Semiconductor Devices

Splitting of resonant optical modes in Fabry-Perot microcavities

V. G. Golubev, A. A. Dukin, A. V. Medvedev, A. B. Pevtsov, A. V. Sel’kin, N. A. Feoktistov

Atomic Structure and Nonelectronic Properties of Semiconductors

The use of magnesium to dope gallium nitride obtained by molecular-beam epitaxy from activated nitrogen

A. A. Vorob’ev, V. V. Korablev, S. Yu. Karpov

Atomic Structure and Nonelectronic Properties of Semiconductors

Simulation of growth kinetics of octahedral and platelike oxygen precipitates in silicon

V. V. Svetukhin, A. G. Grishin, O. V. Prikhod’ko

Electronic and Optical Properties of Semiconductors

Special features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: I. Effects of spin interaction

A. I. Veinger, A. G. Zabrodskii, T. V. Tisnek, E. N. Mokhov

Electronic and Optical Properties of Semiconductors

Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system

V. G. Dubrovskii, V. A. Egorov, G. E. Cirlin, N. K. Polyakov, Yu. B. Samsonenko, N. V. Kryzhanovskaya, A. F. Tsatsul’nikov, V. M. Ustinov

Low-Dimensional Systems

Control over the parameters of InAs-GaAs quantum dot arrays in the Stranski-Krastanow growth mode

N. A. Cherkashin, M. V. Maksimov, A. G. Makarov, V. A. Shchukin, V. M. Ustinov, N. V. Lukovskaya, Yu. G. Musikhin, G. E. Cirlin, N. A. Bert, Zh. I. Alferov, N. N. Ledentsov, D. Bimberg

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