Ausgabe 7/2005
Inhalt (25 Artikel)
Nature of a temperature hysteresis of effective shear modulus in single-crystal silicon
A. V. Oleinich-Lysyuk, B. I. Gutsulyak, I. M. Fodchuk
Phonon scattering, thermoelectric power, and thermal conductivity control in a semiconductor-metal eutectic composition
G. I. Isakov
The influence of oxygen on the formation of donor centers in silicon layers implanted with erbium and oxygen ions
O. V. Aleksandrov, A. O. Zakhar’in, N. A. Sobolev
Stresses in selectively oxidized GaAs/(AlGa)xOy structures
S. A. Blokhin, A. N. Smirnov, A. V. Sakharov, A. G. Gladyshev, N. V. Kryzhanovskaya, N. A. Maleev, A. E. Zhukov, E. S. Semenova, D. A. Bedarev, E. V. Nikitina, M. M. Kulagina, M. V. Maksimov, N. N. Ledentsov, V. M. Ustinov
Low-temperature instabilities of the electrical properties of Cd0.96Zn0.04Te:Cl semi-insulating crystals
A. V. Savitskii, O. A. Parfenyuk, M. I. Ilashchuk, K. S. Ulyanitskii, S. N. Chupyra, N. D. Vakhnyak
Polarized infrared and Raman spectroscopy studies of the liquid crystal E7 alignment in composites based on grooved silicon
E. V. Astrova, T. S. Perova, S. A. Grudinkin, V. A. Tolmachev, Yu. A. Pilyugina, V. B. Voronkov, J. K. Vij
Hydrogen-containing donors in silicon: Centers with negative effective correlation energy
Yu. M. Pokotilo, A. N. Petukh, V. V. Litvinov, V. G. Tsvyrko
Weak ferromagnetism in InSe:Mn layered crystals
V. V. Slyn’ko, A. G. Khandozhko, Z. D. Kovalyuk, A. V. Zaslonkin, V. E. Slyn’ko, M. Arciszewska, W. D. Dobrowolski
Dispersion of the refractive index in Tl1−x CuxGaSe2 (0 ≤ x ≤ 0.02) and Tl1−x CuxInS2 (0 ≤ x ≤ 0.015) crystals
A. N. Georgobiani, A. Kh. Matiev, B. M. Khamkhoev
The effect of neutron irradiation on the properties of n-InSb whisker microcrystals
I. A. Bolshakova, V. M. Boiko, V. N. Brudnyi, I. V. Kamenskaya, N. G. Kolin, E. Yu. Makido, T. A. Moskovets, D. I. Merkurisov
The electrooptic effect and anisotropy of the refractive index in Tl1−x CuxGaSe2 (0 ≤ x ≤ 0.02) crystals
A. N. Georgobiani, A. Kh. Matiev, B. M. Khamkhoev
Stimulation of negative magnetoresistance by an electric field and light in silicon doped with boron and manganese
M. K. Bakhadyrkhanov, O. É. Sattarov, Kh. M. Iliev, K. S. Ayupov, Tuérdi Umaier
Specific features of the physical properties of a modified CdTe surface
V. P. Makhniy
The effects of interface states on the capacitance and electroluminescence efficiency of InGaN/GaN light-emitting diodes
N. I. Bochkareva, E. A. Zhirnov, A. A. Efremov, Yu. T. Rebane, R. I. Gorbunov, A. V. Klochkov, D. A. Lavrinovich, Yu. G. Shreter
The properties of structures based on oxidized porous silicon under the effect of illumination and a gas environment
D. I. Bilenko, O. Ya. Belobrovaya, É. A. Zharkova, D. V. Terin, E. I. Khasina
Optical transitions in a quantized cylindrical layer in the presence of a homogeneous electric field
V. A. Arutyunyan, S. L. Arutyunyan, G. O. Demirchyan, G. Sh. Petrosyan
Nonohmic quasi-2D hopping conductance and the kinetics of its relaxation
B. A. Aronzon, D. Yu. Kovalev, 2 V. V. Ryl’kov
The transition from thermodynamically to kinetically controlled formation of quantum dots in an InAs/GaAs(100) system
Yu. G. Musikhin, G. E. Cirlin, V. G. Dubrovskii, Yu. B. Samsonenko, A. A. Tonkikh, N. A. Bert, V. M. Ustinov
Resonance modulation of electron-electron relaxation by a quantizing magnetic field
V. I. Kadushkin
A study of the local electronic and atomic structure in a-SixC1−x amorphous alloys using ultrasoft X-ray emission spectroscopy
V. A. Terekhov, E. I. Terukov, I. N. Trapeznikova, M. Kashkarov, O. V. Kurilo, S. Yu. Turishchev, A. B. Golodenko, É. P. Domashevskaya
Optical and electrical properties of thin wafers fabricated from nanocrystalline silicon powder
N. N. Kononov, G. P. Kuz’min, A. N. Orlov, A. A. Surkov, O. V. Tikhonevich
Magnetic properties of iron-modified amorphous carbon
S. G. Yastrebov, V. I. Ivanov-Omskii, V. Pop, C. Morosanu, A. Slav, J. Voiron
Photosensitive properties and a mechanism for photogeneration of charge carriers in polymeric layers containing organometallic complexes
E. L. Aleksandrova, M. Ya. Goikhman, I. V. Podeshvo, V. V. Kudryavtsev
High-power flip-chip blue light-emitting diodes based on AlGaInN
D. A. Zakheim, I. P. Smirnova, I. V. Roznanskii, S. A. Gurevich, M. M. Kulagina, E. M. Arakcheeva, G. A. Onushkin, A. L. Zakheim, E. D. Vasil’eva, G. V. Itkinson
A ferroelectric field effect transistor based on a Pb(ZrxTi1−x )O3/SnO2 heterostructure
I. E. Titkov, I. P. Pronin, D. V. Mashovets, L. A. Delimova, I. A. Liniichuk, I. V. Grekhov