Ausgabe 7/2007
Inhalt (16 Artikel)
The effect of irradiation on the properties of SiC and devices based on this compound
E. V. Kalinina
The origin of edge luminescence in diffusion ZnSe:Sn layers
V. I. Gryvul, V. P. Makhniy, M. M. Slyotov
Optical properties of doped bismuth telluride crystals in the region of plasma effects
N. P. Stepanov, S. A. Nemov, M. K. Zhitinskaya, T. E. Svechnikova
Electron spin resonance of interacting spins in n-Ge. 1. The spectrum and g factor
A. I. Veĭnger, A. G. Zabrodskiĭ, T. V. Tisnek, S. I. Goloshchapov
Features of erbium electroluminescence observed in disordered semiconductors and related to the difference in the localized state charge
A. B. Shmel’kin, K. D. Tsendin
Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal
V. V. Bogoboyashchyy, I. I. Izhnin, M. Pociask, K. D. Mynbaev, V. I. Ivanov-Omskiĭ
Atomic and electron structure of the GaAs (001) surface
S. E. Kul’kova, S. V. Eremeev, A. V. Postnikov, D. I. Bazhanov, B. V. Potapkin
Lateral conductivity of p-type doped Si/Ge island structures
V. A. Gergel’, T. M. Burbaev, V. A. Kurbatov, A. O. Pogosov, M. Rzaev, N. N. Sibel’din, I. M. Shcheleva, M. N. Yakupov
The role of surface phonons in the formation of the spectrum of polaron states in quantum dots
A. Yu. Maslov, O. V. Proshina, A. N. Rusina
Molecular state of A + centers in GaAs/AlGaAs quantum well
P. V. Petrov, Yu. L. Ivanov, A. E. Zhukov
Electrochemical pore formation mechanism in III–V crystals (Part I)
V. P. Ulin, S. G. Konnikov
Electrochemical pore formation mechanism in III–V crystals (Part II)
V. P. Ulin, S. G. Konnikov
High-efficiency LEDs based on n-GaSb/p-GaSb/n-GaInAsSb/P-AlGaAsSb type-II thyristor heterostructures
N. D. Stoyanov, B. E. Zhurtanov, A. N. Imenkov, A. P. Astakhova, M. P. Mikhaĭlova, Yu. P. Yakovlev
1.8-μm laser diodes based on quantum-size AlInGaAs/InP heterostructures
A. V. Lyutetskiĭ, K. S. Borshchev, A. D. Bondarev, T. A. Nalet, N. A. Pikhtin, S. O. Slipchenko, N. V. Fetisova, M. A. Khomylev, A. A. Marmalyuk, Yu. L. Ryaboshtan, V. A. Simakov, I. S. Tarasov
Effect of deposition conditions on nanowhisker morphology
V. G. Dubrovskiĭ, I. P. Soshnikov, N. V. Sibirev, G. É. Cirlin, V. M. Ustinov, M. Tchernycheva, J. C. Harmand
Silicon photodiode with a grid p-n junction
V. I. Blynskii, Y. G. Vasileuskii, S. A. Malyshev, A. L. Chizh