Skip to main content

Semiconductors

Ausgabe 7/2015

Inhalt (24 Artikel)

Electronic Properties of Semiconductors

Magnetic structure of TlFeS2 and TlFeSe2 chalcogenides

E. B. Asgerov, N. T. Dang, A. I. Beskrovnyy, A. I. Madadzada, D. I. Ismayilov, R. N. Mehdiyeva, S. H. Jabarov, E. M. Karimova

Electronic Properties of Semiconductors

Thermoelectric power of n-InSb in a transverse quantizing magnetic field

M. M. Gadzhialiev, R. R. Bashirov, Z. Sh. Pirmagomedov, T. N. Efendieva, H. Mädge, K. Filar

Electronic Properties of Semiconductors

Behavior of the Fe impurity in Hg3In2Te6 crystals

O. G. Grushka, A. I. Savchuk, S. N. Chupyra, S. V. Bilichuk

Spectroscopy, Interaction with Radiation

Effect of microwave treatment on the luminescence properties of CdS and CdTe:Cl Single Crystals

R. A. Red’ko, S. I. Budzulyak, D. V. Korbutyak, A. P. Lotsko, N. D. Vakhnyak, L. A. Demchyna, S. M. Kalytchuk, R. V. Konakova, V. V. Milenin, Yu. V. Bykov, S. V. Egorov, A. G. Eremeev

Spectroscopy, Interaction with Radiation

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

N. Sadananda Kumar, Kasturi V. Bangera, G. K. Shivakumar

Surfaces, Interfaces, and Thin Films

Nitridation of an unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surface in an ammonia flow

D. S. Milakhin, T. V. Malin, V. G. Mansurov, Yu. G. Galitsin, K. S. Zhuravlev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Investigation of the optical properties of GaAs with δ-Si doping grown by molecular-beam epitaxy at low temperatures

D. V. Lavrukhin, A. E. Yachmenev, A. S. Bugaev, G. B. Galiev, E. A. Klimov, R. A. Khabibullin, D. S. Ponomarev, P. P. Maltsev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Investigations of nanodimensional Al2O3 films deposited by ion-plasma sputtering onto porous silicon

P. V. Seredin, A. S. Lenshin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsentyev, A. D. Bondarev, I. S. Tarasov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Influence of buffer-layer construction and substrate orientation on the electron mobilities in metamorphic In0.70Al0.30As/In0.76Ga0.24As/In0.70Al0.30As structures on GaAs substrates

V. A. Kulbachinskii, L. N. Oveshnikov, R. A. Lunin, N. A. Yuzeeva, G. B. Galiev, E. A. Klimov, S. S. Pushkarev, P. P. Maltsev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Resistance of 4H-SiC Schottky barriers at high forward-current densities

P. A. Ivanov, T. P. Samsonova, N. D. Il’inskaya, O. Yu. Serebrennikova, O. I. Kon’kov, A. S. Potapov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

On the optimization of asymmetric barrier layers in InAlGaAs/AlGaAs laser heterostructures on GaAs substrates

A. E. Zhukov, L. V. Asryan, E. S. Semenova, F. I. Zubov, N. V. Kryzhanovskaya, M. V. Maximov

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

Optical and electrical properties of silicon nanopillars

L. S. Golobokova, Yu. V. Nastaushev, F. N. Dultsev, N. V. Kryzhanovskaya, E. I. Moiseev, A. S. Kozhukhov, A. V. Latyshev

Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena

DNA detection by THz pumping

A. L. Chernev, N. T. Bagraev, L. E. Klyachkin, A. K. Emelyanov, M. V. Dubina

Amorphous, Vitreous, and Organic Semiconductors

Dispersion of the refractive index of a samarium-doped Se95Te5 chalcogenide glassy semiconductor

S. U. Atayeva, S. I. Mekhtiyeva, A. I. Isayev

Amorphous, Vitreous, and Organic Semiconductors

Effect of the length of ligands passivating quantum dots on the electrooptical characteristics of organic light-emitting diodes

N. S. Kurochkin, A. A. Vashchenko, A. G. Vitukhnovsky, P. N. Tananaev

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Luminescence-kinetic spectroscopy of compound complexes of polyphenylquinolines

E. L. Aleksandrova, V. M. Svetlichnyi, N. V. Matyushina, L. A. Myagkova, S. V. Daineko, I. L. Martynov, A. R. Tameev

Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Formation of III–V ternary solid solutions on GaAs and GaSb plates via solid-phase substitution reactions

V. I. Vasil’ev, G. S. Gagis, V. I. Kuchinskii, V. G. Danil’chenko

Physics of Semiconductor Devices

Calculation of the optimal architecture of a double-layer ITO film intended for use in reflective contacts in blue and near-UV LEDs

A. S. Pavluchenko, L. K. Markov, I. P. Smirnova, D. A. Zakheim

Physics of Semiconductor Devices

Light emitting diode–photodiode optoelectronic pairs based on the InAs/InAsSb/InAsSbP heterostructure for the detection of carbon dioxide

T. V. Bezyazychnaya, M. V. Bogdanovich, V. V. Kabanov, D. M. Kabanau, Y. V. Lebiadok, V. V. Parashchuk, A. G. Ryabtsev, G. I. Ryabtsev, P. V. Shpak, M. A. Shchemelev, I. A. Andreev, E. V. Kunitsyna, V. V. Sherstnev, Yu. P. Yakovlev

Aktuelle Ausgaben

Scrollen für mehr

Benutzen Sie die Pfeiltasten für mehr

Scrollen oder Pfeiltasten für mehr