Ausgabe 7/2020
Inhalt (12 Artikel)
SURFACES, INTERFACES,
AND THIN FILMS
First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors
A. V. Bakulin, S. E. Kulkova
SURFACES, INTERFACES,
AND THIN FILMS
Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films
G. K. Krivyakin, V. A. Volodin, G. N. Kamaev, A. A. Popov
SURFACES, INTERFACES,
AND THIN FILMS
AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient
L. S. Lunin, M. L. Lunina, D. L. Alfimova, A. S. Pashchenko, O. S. Pashchenko, N. M. Bogatov
SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS,
AND QUANTUM PHENOMENA
Scattering Matrix Method for Calculating the Spontaneous-Emission Probability in Cylindrically Symmetric Structures
V. V. Nikolaev, K. A. Ivanov, K. M. Morozov, A. V. Belonovski
SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS,
AND QUANTUM PHENOMENA
2D SiC/Si Structure: Electron States and Adsorbability
S. Yu. Davydov, A. V. Zubov
SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS,
AND QUANTUM PHENOMENA
Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles
E. Yu. Stovpiaga, D. A. Kurdyukov, D. A. Kirilenko, V. G. Golubev
SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS,
AND QUANTUM PHENOMENA
Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure
S. R. Panda, A. Sahu, S. Das, A. K. Panda, T. Sahu
PHYSICS OF SEMICONDUCTOR
DEVICES
Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm)
E. V. Kunitsyna, M. A. Royz, I. A. Andreev, E. A. Grebenshchikova, A. A. Pivovarova, M. Ahmetoglu (Afrailov), Ya. V. Lebiadok, R. Yu. Mikulich, N. D. Iliinskaya, Yu. P. Yakovlev
PHYSICS OF SEMICONDUCTOR
DEVICES
Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches
Y.-C. Lin, J.-S. Niu, W.-C. Liu, J.-H. Tsai
FABRICATION, TREATMENT, AND TESTING
OF MATERIALS AND STRUCTURES
Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon
D. V. Yurasov, N. A. Baídakova, A. N. Yablonskiy, A. V. Novikov
FABRICATION, TREATMENT, AND TESTING
OF MATERIALS AND STRUCTURES
GaAs Semiconductor Passivated by (NH4)2Sx: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements
H. Mahmoodnia, A. Salehi, V. R. Mastelaro