Ausgabe 8/2001
Inhalt (25 Artikel)
Growth of fractal lithium clusters in germanium
S. V. Bulyarskii, V. V. Svetukhin, O. V. Agafonova, A. G. Grishin, P. A. Il’in
Vibration modes of oxygen dimers in germanium
V. V. Litvinov, L. I. Murin, L. Lindström, V. P. Markevich, A. A. Klechko
Effect of deviations from stoichiometry on electrical conductivity and photoconductivity of CuInSe2 crystals
M. A. Abdullaev, Dz. Kh. Magomedova, R. M. Gadzhieva, E. I. Terukov, Yu. A. Nikolaev, Yu. V. Rud’, P. P. Khokhlachev
The onset of double limiting cycle in the impurity-assisted electric breakdown of a compensated semiconductor with a shorted Hall voltage
K. M. Jandieri, Z. S. Kachlishvili
Preparation and properties of isotopically pure polycrystalline silicon
O. N. Godisov, A. K. Kaliteevskii, V. I. Korolev, B. Ya. Ber, V. Yu. Davydov, M. A. Kaliteevskii, P. S. Kop’ev
Electrical properties of CdxHg1−x Te/CdZnTe heterostructures
A. G. Belov, A. I. Belogorokhov, V. M. Lakeenkov
Native and impurity defects in ZnSe:In single crystals prepared by free growth
Yu. F. Vaksman, Yu. A. Nitsuk, Yu. N. Purtov, P. V. Shapkin
Origin of an absorption band peaked at 5560 cm−1 and related to divacancies in Si1−x Gex
Yu. V. Pomozov, M. G. Sosnin, L. I. Khirunenko, N. V. Abrosimov, W. Schröder
Photoluminescence kinetics in GaAs under the influence of surface acoustic waves
K. S. Zhuravlev, A. M. Gilinskii, A. V. Tsarev, A. E. Nikolaenko
Optical band gap of Cd1−x MnxTe and Zn1−x MnxTe semiconductors
P. V. Zhukovskii, Ya. Partyka, P. Vengerek, Yu. V. Sidorenko, Yu. A. Shostak, A. Rodzik
The role of lead in growing Ga1−X InXAsYSb1−Y solid solutions by liquid-phase epitaxy
T. I. Voronina, T. S. Lagunova, E. V. Kunitsyna, Ya. A. Parkhomenko, D. A. Vasyukov, Yu. P. Yakovlev
Interface states and deep-level centers in silicon-on-insulator structures
I. V. Antonova, J. Stano, D. V. Nikolaev, O. V. Naumova, V. P. Popov, V. A. Skuratov
Simultaneous doping of silicon layers with erbium and oxygen in the course of molecular-beam epitaxy
V. G. Shengurov, S. P. Svetlov, V. Yu. Chalkov, G. A. Maksimov, Z. F. Krasil’nik, B. A. Andreev, M. V. Stepikhova, D. V. Shengurov, L. Palmetshofer, H. Ellmer
Pulsed laser-stimulated surface acoustic waves in p-CdTe crystals
A. Baidullaeva, A. I. Vlasenko, É. I. Kuznetsov, A. V. Lomovtsev, P. E. Mozol’, A. B. Smirnov
Analysis of inherent potential nonuniformities at the extrinsic-semiconductor surface
V. B. Bondarenko, M. V. Kuz’min, V. V. Korablev
Anisotropy of the spatial distribution of In(Ga)As quantum dots in In(Ga)As-GaAs multilayer heterostructures studied by X-ray and synchrotron diffraction and transmission electron microscopy
N. N. Faleev, Yu. G. Musikhin, A. A. Suvorova, A. Yu. Egorov, A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, M. Tabuchi, Y. Takeda
Optical properties of germanium monolayers on silicon
T. M. Burbaev, T. N. Zavaritskaya, V. A. Kurbatov, N. N. Mel’nik, V. A. Tsvetkov, K. S. Zhuravlev, V. A. Markov, A. I. Nikiforov
The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films
N. Rakhimov, U. Babakhodzhaev, Kh. Mavlyanov, R. Ikramov
Anomalous polarization of Raman scattering by transverse and longitudinal phonons in porous doped GaAs
V. N. Denisov, B. N. Mavrin, V. A. Karavanskii
Effect of temperature on photoconductivity and its decay in microcrystalline silicon
A. G. Kazanskii, H. Mell, E. I. Terukov, P. A. Forsh
X-ray spectroscopic study of electronic structure of amorphous silicon and silicyne
A. I. Mashin, A. F. Khokhlov, É. P. Domashevskaya, V. A. Terekhov, N. I. Mashin
Threshold characteristics of λ=1.55 µm InGaAsP/InP heterolasers
G. G. Zegrya, N. A. Pikhtin, G. V. Skrynnikov, S. O. Slipchenko, I. S. Tarasov
An ionization-type Si:S-based semiconductor converter of infrared images with sensitivity in the spectral range of CO2-laser radiation
V. T. Tulanov, Kh. B. Siyabekov, A. Sh. Davletova, K. A. Ortaeva
A study of technological processes in the production of high-power high-voltage bipolar transistors incorporating an array of inclusions in the collector region
N. I. Volokobinskaya, I. N. Komarov, T. V. Matyukhina, V. I. Reshetnikov, A. A. Rush, I. V. Falina, A. S. Yastrebov
Erratum: Carrier photoexcitation from levels in quantum dots to states of the continuum in lasing
L. V. Asryan, R. A. Suris