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Semiconductors

Ausgabe 8/2007

Inhalt (26 Artikel)

The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia

Simulation of the fluctuations of energy and charge deposited during e-beam exposure

S. S. Borisov, S. I. Zaitsev, E. A. Grachev

The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia

Cathodoluminescence studies of C60 fullerene-based films and nanostructures

A. V. Nashchekin, S. V. Baryshev, R. V. Sokolov, O. A. Usov

The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors, June 11–14, 2006, St. Petersburg, Russia

Method for extracting of EXAFS oscillation function based on the variation principle

M. D. Sharkov, K. Ju. Pogrebitsky, S. G. Konnikov

Electronic and Optical Properties of Semiconductors

Temperature dependence of the band structure of ZnS, ZnSe, ZnTe, and CdTe wurtzite-type semiconductor compounds

T. V. Gorkavenko, S. M. Zubkova, V. A. Makara, L. N. Rusina

Electronic and Optical Properties of Semiconductors

Deformation potential constants of deep impurity centers in semiconductors with anisotropic valence band

E. B. Osipov, N. A. Osipova, M. E. Mokina, S. N. Tsvetkova, S. D. Kangliev

Electronic and Optical Properties of Semiconductors

Preparation of ZnO:N films by radical beam gettering epitaxy

I. V. Rogozin

Electronic and Optical Properties of Semiconductors

Picosecond kinetics of photoexcited carriers in gallium arsenide containing aluminum nanoclusters

V. Ya. Aleshkin, N. V. Vostokov, D. M. Gaponova, V. M. Danil’tsev, A. A. Dubinov, Z. F. Krasil’nik, A. I. Korytin, D. I. Kuritsyn, D. A. Pryakhin, V. I. Shashkin

Electronic and Optical Properties of Semiconductors

Photoluminescence and composition of amorphous As2Se3 films modified with Er(thd)3 complex compound

V. Kh. Kudoyarova, S. A. Kozyukhin, K. D. Tsendin, V. M. Lebedev

Semiconductor Structures, Interfaces, and Surfaces

Current-voltage characteristics of isotype SiC-SiC junctions fabricated by direct wafer bonding

P. A. Ivanov, L. S. Kostina, A. S. Potapov, T. P. Samsonova, E. I. Belyakova, T. S. Argunova, I. V. Grekhov

Semiconductor Structures, Interfaces, and Surfaces

Effect of atmospheric-air pressure on charge transport in structures with oxidized porous silicon

D. I. Bilenko, O. Ya. Belobrovaya, E. A. Zharkova, D. V. Terin, E. I. Khasina

Low-Dimensional Systems

Determination of the composition and strains in GexSi1−x -based nanostructures from Raman spectroscopy data with consideration of the contribution of the heterointerface

V. A. Volodin, M. D. Efremov, A. I. Yakimov, G. Yu. Mikhalev, A. I. Nikiforov, A. V. Dvurechenskiĭ

Low-Dimensional Systems

Lateral photoconductivity of Ge/Si heterostructures with Ge quantum dots

S. V. Kondratenko, A. S. Nikolenko, O. V. Vakulenko, S. L. Golovinskiy, Yu. N. Kozyrev, M. Yu. Rubezhanskaya, A. I. Vodyanitsky

Low-dimensional Systems

Formation and optical properties of CuInTe2 nanoparticles in silicate matrices

I. V. Bodnar’, V. S. Gurin, N. P. Soloveĭ, A. P. Molochko

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites

Allotropic composition of amorphous carbon

S. G. Yastrebov, V. I. Ivanov-Omskiĭ

Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites

Modification of the properties of porous silicon on adsorption of iodine molecules

A. S. Vorontsov, L. A. Osminkina, A. E. Tkachenko, E. A. Konstantinova, V. G. Elenskiĭ, V. Yu. Timoshenko, P. K. Kashkarov

Physics of Semiconductor Devices

A decrease in the density of trapping centers in silicon oxide as a result of radiation-thermal treatment

G. M. Voronkova, V. D. Popov, G. A. Protopopov

Physics of Semiconductor Devices

The effect of NO2 adsorption on optical and electrical properties of porous silicon layers

V. V. Bolotov, I. V. Ponomareva, Yu. A. Sten’kin, V. E. Kan

Physics of Semiconductor Devices

Instability of current and N-shaped current-voltage characteristic in a silicon p-i-n diode subjected to a magnetic field

I. K. Kamilov, K. M. Aliev, B. G. Aliev, Kh. O. Ibragimov, N. S. Abakarova

Physics of Semiconductor Devices

Enhancement of the Raman scattering in grooved silicon structures

A. V. Zoteev, L. A. Golovan’, E. Yu. Krutkova, A. V. Laktyun’kin, D. A. Mamichev, P. K. Kashkarov, V. Yu. Timoshenko, E. V. Astrova, T. S. Perova

Physics of Semiconductor Devices

Cadmium-free thin-film Cu(In,Ga)Se2/(In2S3) heterophotoelements: Fabrication and properties

V. B. Zalesski, V. Yu. Rud’, V. F. Gremenok, Yu. V. Rud’, T. R. Leonova, A. V. Kravchenko, E. P. Zaretskaya, M. S. Tivanov

Physics of Semiconductor Devices

Effect of low-temperature annealing on characteristics of SiC detectors with radiation-induced defects

A. M. Ivanov, N. B. Strokan, A. V. Sadokhin, A. A. Lebedev

Physics of Semiconductor Devices

Saturation of light-current characteristics of high-power laser diodes (λ = 1.0–1.8 μm) under pulse operation

D. A. Vinokurov, V. A. Kapitonov, A. V. Lyutetskiĭ, N. A. Pikhtin, S. O. Slipchenko, Z. N. Sokolova, A. L. Stankevich, M. A. Khomylev, V. V. Shamakhov, K. S. Borshchev, I. N. Arsent’ev, I. S. Tarasov

Fabrication, Treatment, and Testing of Materials and Structures

Electrical passivation of the silicon surface by organic monolayers of 1-octadecene

I. V. Antonova, R. A. Soots, V. A. Seleznev, V. Ya. Prints

Fabrication, Treatment, and Testing of Materials and Structures

Formation of nanoparticles on the silicon surface under the effect of femtosecond laser pulses

S. V. Zabotnov, A. A. Ezhov, L. A. Golovan’, M. A. Lastovkina, V. I. Panov, V. Yu. Timoshenko, P. K. Kashkarov

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