Ausgabe 8/2009
Inhalt (25 Artikel)
Optimum composition of a Bi2Te3 − x Se x alloy for the n-type leg of a thermoelectric generator
L. V. Prokofieva, D. A. Pshenay-Severin, P. P. Konstantinov, A. A. Shabaldin
Thermoelectric figure of merit of Ag2Se with Ag and Se excess
F. F. Aliev, M. B. Jafarov, V. I. Eminova
Specific features of recombination processes in CdTe films produced in different temperature conditions of growth and subsequent annealing
I. B. Ermolovich, V. V. Milenin, R. A. Red’ko, S. M. Red’ko
Spin-lattice relaxation of 113Cd and 19F nuclear spins in the crystal lattice of CdF2 semiconductor crystals with DX centers
S. A. Kazanskii, W. W. Warren Jr., A. I. Ryskin
Photoelectric properties of a sandwich structure composed of films synthesized under highly nonequilibrium conditions
A. P. Belyaev, V. P. Rubets, Kh. A. Toshkhodzhaev
The temperature dependence of the thermopower of the InSb Corbino disc in a quantizing magnetic field
M. M. Gadjialiev, Z. Sh. Pirmagomedov
Lateral photoconductivity of multilayer Ge/Si structures with Ge quantum dots
A. B. Talochkin, I. B. Chistokhin, V. A. Markov
Spin hall effect in semiconductor structures with spatially inhomogeneous spin relaxation
I. N. Gorbatyi
Luminescence in quantum-confined cadmium selenide nanocrystals and nanorods in external electric fields
L. I. Gurinovich, A. A. Lutich, A. P. Stupak, S. Ya. Prislopsky, E. K. Rusakov, M. V. Artemyev, S. V. Gaponenko, H. V. Demir
Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal
A. N. Gruzintsev, G. A. Emelchenko, V. M. Masalov
Dependence of the efficiency of a CdS/CdTe solar cell on the absorbing layer’s thickness
L. A. Kosyachenko, A. I. Savchuk, E. V. Grushko
Cooperative effects in the case of pulsed self-heating of a p-i-n diode
A. V. Gorbatyuk, F. B. Serkov
Dielectric waveguide for middle and far infrared radiation
N. S. Averkiev, S. O. Slipchenko, Z. N. Sokolova, I. S. Tarasov
Flexible solar cells based on cadmium sulfide and telluride
G. S. Khrypunov, E. P. Chernykh, N. A. Kovtun, E. K. Belonogov
Charge transport in 4H-SiC detector structures under conditions of a high electric field
A. M. Ivanov, M. G. Mynbaeva, A. V. Sadokhin, N. B. Strokan, A. A. Lebedev
Fast pulsed gallium arsenide heterostructure diodes
V. G. Danil’chenko, V. I. Korol’kov, F. Yu. Soldatenkov
Features of molecular beam epitaxy of the GaN (0001) and GaN (000) layers with the use of different methods of activation of nitrogen
A. M. Mizerov, V. N. Jmerik, V. K. Kaibyshev, T. A. Komissarova, S. A. Masalov, S. V. Ivanov
Effect of parameters of narrow-gap inclusions on the type and intensity of secondary-ion photoeffect in heterophase photosensitive semiconductors
S. V. Stetsyura, I. V. Malyar, A. A. Serdobintsev, S. A. Klimova
Fractal geometry of the surface potential in electrochemically deposited platinum and palladium films
N. A. Torkhov, V. A. Novikov
High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus
V. V. Chaldyshev, M. A. Yagovkina, M. V. Baidakova, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Properties of GaN(SiC)-(Ti, Zr)B x contacts subjected to rapid thermal annealing
A. E. Belyaev, N. S. Boltovets, V. N. Ivanov, R. V. Konakova, V. P. Kladko, Ya. Ya. Kudryk, A. A. Lebedev, V. V. Milenin, V. N. Sheremet
Possibility of obtaining the (GaSb)1 − x (Si2) x films on silicon substrates by the method of liquid-phase epitaxy
Sh. N. Usmonov, A. S. Saidov, A. Yu. Leyderman, D. Saparov, K. T. Kholikov
The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures
P. V. Seredin, N. N. Gordienko, A. V. Glotov, I. A. Zhurbina, E. P. Domashevskaya, I. N. Arsent’ev, M. V. Shishkov
Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate
K. D. Moiseev, Ya. A. Parkhomenko, E. V. Gushchina, A. V. Ankudinov, V. P. Mikhailova, N. A. Bert, Yu. P. Yakovlev