Ausgabe 8/2010
Inhalt (28 Artikel)
A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy
S. S. Khludkov, I. A. Prudaev, V. V. Novikov, O. P. Tolbanov, I. V. Ivonin
Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions
G. A. Bordovsky, P. V. Gladkikh, M. Yu. Kozhokar, A. V. Marchenko, P. P. Seregin, E. I. Terukov
Interaction of copper impurity with radiation defects in silicon doped with boron
N. A. Yarykin, J. Weber
Electron structure and spectral characteristics of Cd-substituted Ge-based clathrates
N. A. Borshch, N. S. Pereslavtseva, S. I. Kurganskii
Study of main HgMnZnTe band parameters
S. E. Ostapov, V. M. Frasunyak, V. V. Zhikharevich
Statistical method of deep-level transient spectroscopy in semiconductors
E. A. Tatokhin, A. V. Kadantsev, A. E. Bormontov, V. G. Zadorozhniy
Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
N. I. Anisimova, V. A. Bordovsky, G. I. Grabko, R. A. Castro
Electron scattering by acceptor centers in p-Ag2Te at low temperatures
F. F. Aliev, M. B. Jafarov, G. Z. Askerova, E. M. Gojaev
Optical properties of thin GaSe/n-Si(111) films
M. P. Kisselyuk, O. I. Vlasenko, P. O. Gentsar, M. V. Vuychik, M. S. Zayats, I. V. Kruglenko, O. S. Litvin, Ts. A. Kryskov
Direct tunneling of electrons in Al-n +-Si-SiO2-n-Si structures under conditions of nonstationary depletion of the semiconductor surface of the majority charge carriers
E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan, G. V. Chucheva
Capacitance-voltage characteristics of the electrolyte-n-InN surface and electron states at the interface
M. E. Rudinsky, A. A. Gutkin, P. N. Brunkov
Development and photoelectric properties of In/p-Ag3AsS3 surface-barrier structures
V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov
Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on p-type silicon
A. M. Ivanov, I. M. Kotina, M. S. Lasakov, N. B. Strokan, L. M. Tuhkonen
Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode
M. A. Remnev, I. Yu. Kateev, V. F. Elesin
Raman studies of silicon nanocrystals embedded in silicon suboxide layers
N. E. Maslova, A. A. Antonovsky, D. M. Zhigunov, V. Yu. Timoshenko, V. N. Glebov, V. N. Seminogov
Raman scattering in organic semiconductors based on erbium biphthalocyanine molecules and chlorine-containing europium-lutetium triphthalocyanine molecules
I. A. Belogorokhov, D. A. Mamichev, M. A. Dronov, V. E. Pushkarev, L. G. Tomilova, D. R. Khokhlov
InGaAs tunnel-injection structures with nanobridges: Excitation transfer and luminescence kinetics
V. G. Talalaev, A. V. Senichev, B. V. Novikov, J. W. Tomm, T. Elsaesser, N. D. Zakharov, P. Werner, U. Gösele, Yu. B. Samsonenko, G. E. Cirlin
Study of spin centers in nanocrystalline titanium dioxide with a high degree of photocatalytic activity
E. A. Konstantinova, V. Ya. Gayvoronskiy, V. Yu. Timoshenko, P. K. Kashkarov
Study of photoluminescence and electroluminescence mechanisms in quantum-confined InSb/InAs heterostructures
Ya. V. Terent’ev, M. S. Mukhin, V. A. Solov’ev, A. N. Semenov, B. Ya. Meltser, A. A. Usikova, S. V. Ivanov
Photoluminescence of nitro-substituted europium (III) phthalocyanines
A. V. Ziminov, Yu. A. Polevaya, T. A. Jourre, S. M. Ramsh, M. M. Mezdrogina, N. K. Poletaev
A study of raman and rutherford backscattering spectra of amorphous carbon films modified with platinum
A. D. Remenyuk, T. K. Zvonareva, I. T. Serenkov, V. I. Sakharov, T. S. Perova, J. Wasyluk
Efficient photoelectric converters of ultraviolet radiation based on ZnS and CdS with low-resistivity surface layers
Yu. N. Bobrenko, S. Yu. Pavelets, A. M. Pavelets, M. P. Kiselyuk, N. V. Yaroshenko
Study of minority carrier diffusion lengths in photoactive layers of multijunction solar cells
S. A. Mintairov, V. M. Andreev, V. M. Emelyanov, N. A. Kalyuzhnyy, N. K. Timoshina, M. Z. Shvarts, V. M. Lantratov
Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures
L. P. Avakyants, P. Yu. Bokov, A. V. Chervyakov, A. V. Chuyas, A. E. Yunovich, E. D. Vasileva, D. A. Bauman, V. V. Uelin, B. S. Yavich
InP/GaAsSb type-II DHBTs with GaAsSb/lnGaAs superlattice-base and GaAsSb bulk-base structures
Jung-Hui Tsai, Wen-Shiung Lour, Der-Feng Guo, Wen-Chau Liu, Yi-Zhen Wu, Ying-Feng Dai
Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding
I. V. Grekhov, L. S. Kostina, T. S. Argunova, E. I. Belyakova, A. V. Rozkov, N. M. Shmidt, Sh. A. Yusupova, J. H. Je
Relaxation of crystal lattice parameters and structural ordering in In x Ga1 − x As epitaxial alloys
P. V. Seredin, A. V. Glotov, E. P. Domashevskaya, I. N. Arsentyev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov
Properties of ZnO whiskers under CO2-laser irradiation
P. S. Shkumbatyuk