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Semiconductors

Ausgabe 9/2002

Inhalt (24 Artikel)

Atomic Structure and Nonelectronic Properties of Semiconductors

Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy

M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev

Atomic Structure and Nonelectronic Properties of Semiconductors

Mechanism of copper diffusion over the Si(110) surface

A. E. Dolbak, R. A. Zhachuk, B. Z. Olshanetsky

Electronic and Optical Properties of Semiconductors

Internal friction and effective shear modulus of single-crystal silicon in early stages of oxygen precipitation

V. V. Motskin, A. V. Oleinich-Lysyuck, N. D. Raranskii, I. M. Fodchuk

Electronic and Optical Properties of Semiconductors

The temperature and concentration dependences of the charge carrier mobility in PbTe-MnTe solid solutions

E. I. Rogacheva, I. M. Krivul’kin

Electronic and Optical Properties of Semiconductors

Electron-plasmon interaction in acceptor-doped bismuth crystals

N. P. Stepanov, V. M. Grabov

Electronic and Optical Properties of Semiconductors

Study of zinc impurity atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by emission Mössbauer spectroscopy

N. P. Seregin, S. A. Nemov, S. M. Irkaev

Semiconductor Structures, Interfaces, and Surfaces

Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition

M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Ya. I. Alivov, I. I. Khodos

Semiconductor Structures, Interfaces, and Surfaces

Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN

A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, C. Tu

Semiconductor Structures, Interfaces, and Surfaces

Variations in the properties of an implantation-synthesized SixNy-Si heterosystem as a result of thermal and ion-beam treatments

V. V. Karzanov, K. A. Markov, V. V. Sdobnyakov, E. S. Demidov

Semiconductor Structures, Interfaces, and Surfaces

Optical storage on the basis of an n-InSb-SiO2-p-Si heterostructure

Yu. A. Nikol’skii

Semiconductor Structures, Interfaces, and Surfaces

Field-dependent photosensitivity of In-SiO2-Cd0.28Hg0.72Te metal-insulator-semiconductor structures with an opaque field electrode

V. V. Vasil’ev, A. F. Kravchenko, Yu. P. Mashukov

Semiconductor Structures, Interfaces, and Surfaces

Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures

B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul’nikov, J. Y. Chi, J. S. Wang, L. Wei, V. M. Ustinov

Semiconductor Structures, Interfaces, and Surfaces

Charge carrier transport through the contact of metal with a superconducting semiconductor

G. V. Kuznetsov

Semiconductor Structures, Interfaces, and Surfaces

Adsorption and transformation of C60 molecules at the (100) Si surface

N. R. Gall, E. V. Rut’kov, A. Ya. Tontegode

Low-Dimensional Systems

Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures

M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin, N. N. Ledentsov

Low-Dimensional Systems

The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix

D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. A. Cherkashin, N. V. Kryzhanovskaya, A. B. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, R. Selin, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov

Amorphous, Vitreous, and Porous Semiconductors

Photoluminescent and electronic properties of nanocrystalline silicon doped with gold

É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manoilov, V. E. Primachenko, S. V. Svechnikov, E. F. Venger

Amorphous, Vitreous, and Porous Semiconductors

Strains and crystal lattice defects arising in macroporous silicon under oxidation

E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, I. L. Shul’pina

Amorphous, Vitreous, and Porous Semiconductors

Hysteresis of the photonic band gap in VO2 photonic crystal in the semiconductor-metal phase transition

V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel’kin, E. B. Shadrin, A. V. Il’inskii, R. Boeyink

Physics of Semiconductor Devices

Photoelectric phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al solar cells

Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, W. Fuhs, A. Froitzheim

Physics of Semiconductor Devices

Study of the potential distribution in a forward-biased silicon diode using electrostatic force microscopy

A. V. Ankudinov, A. N. Titkov, R. Laiho, V. A. Kozlov

Physics of Semiconductor Devices

MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact

P. V. Bulaev, V. A. Kapitonov, A. V. Lutetskii, A. A. Marmalyuk, D. B. Nikitin, D. N. Nikolaev, A. A. Padalitsa, N. A. Pikhtin, A. D. Bondarev, I. D. Zalevskii, I. S. Tarasov

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