Ausgabe 9/2002
Inhalt (24 Artikel)
Doping of GaAs layers with Si under conditions of low-temperature molecular beam epitaxy
M. D. Vilisova, A. E. Kunitsyn, L. G. Lavrent’eva, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, S. E. Toropov, V. V. Chaldyshev
Mechanism of copper diffusion over the Si(110) surface
A. E. Dolbak, R. A. Zhachuk, B. Z. Olshanetsky
Internal friction and effective shear modulus of single-crystal silicon in early stages of oxygen precipitation
V. V. Motskin, A. V. Oleinich-Lysyuck, N. D. Raranskii, I. M. Fodchuk
The temperature and concentration dependences of the charge carrier mobility in PbTe-MnTe solid solutions
E. I. Rogacheva, I. M. Krivul’kin
Electron-plasmon interaction in acceptor-doped bismuth crystals
N. P. Stepanov, V. M. Grabov
Study of zinc impurity atoms in GaP, GaAs, and GaSb 67Ga(67Zn) and 67Cu(67Zn) by emission Mössbauer spectroscopy
N. P. Seregin, S. A. Nemov, S. M. Irkaev
Cathodoluminescence of ZnO/GaN/α-Al2O3 heteroepitaxial structures grown by chemical vapor deposition
M. V. Chukichev, B. M. Ataev, V. V. Mamedov, Ya. I. Alivov, I. I. Khodos
Experimental observation of splitting of the light and heavy hole bands in elastically strained GaAsN
A. Yu. Egorov, E. S. Semenova, V. M. Ustinov, Y. G. Hong, C. Tu
Variations in the properties of an implantation-synthesized SixNy-Si heterosystem as a result of thermal and ion-beam treatments
V. V. Karzanov, K. A. Markov, V. V. Sdobnyakov, E. S. Demidov
Optical storage on the basis of an n-InSb-SiO2-p-Si heterostructure
Yu. A. Nikol’skii
Field-dependent photosensitivity of In-SiO2-Cd0.28Hg0.72Te metal-insulator-semiconductor structures with an opaque field electrode
V. V. Vasil’ev, A. F. Kravchenko, Yu. P. Mashukov
Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
B. V. Volovik, N. V. Kryzhanovskaya, D. S. Sizov, A. R. Kovsh, A. F. Tsatsul’nikov, J. Y. Chi, J. S. Wang, L. Wei, V. M. Ustinov
Charge carrier transport through the contact of metal with a superconducting semiconductor
G. V. Kuznetsov
Adsorption and transformation of C60 molecules at the (100) Si surface
N. R. Gall, E. V. Rut’kov, A. Ya. Tontegode
Stark effect in vertically coupled quantum dots in InAs-GaAs heterostructures
M. M. Sobolev, V. M. Ustinov, A. E. Zhukov, Yu. G. Musikhin, N. N. Ledentsov
The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
D. S. Sizov, M. V. Maksimov, A. F. Tsatsul’nikov, N. A. Cherkashin, N. V. Kryzhanovskaya, A. B. Zhukov, N. A. Maleev, S. S. Mikhrin, A. P. Vasil’ev, R. Selin, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, Zh. I. Alferov
Photoluminescent and electronic properties of nanocrystalline silicon doped with gold
É. B. Kaganovich, I. M. Kizyak, S. I. Kirillova, É. G. Manoilov, V. E. Primachenko, S. V. Svechnikov, E. F. Venger
Strains and crystal lattice defects arising in macroporous silicon under oxidation
E. V. Astrova, V. V. Ratnikov, A. D. Remenyuk, I. L. Shul’pina
Hysteresis of the photonic band gap in VO2 photonic crystal in the semiconductor-metal phase transition
V. G. Golubev, D. A. Kurdyukov, A. B. Pevtsov, A. V. Sel’kin, E. B. Shadrin, A. V. Il’inskii, R. Boeyink
Photoelectric phenomena in ZnO(ITO)/a-Si:H(n)/c-Si(p)/Al solar cells
Yu. A. Nikolaev, V. Yu. Rud’, Yu. V. Rud’, E. I. Terukov, W. Fuhs, A. Froitzheim
Analysis of high-frequency response and nonlinear coherent generation of resonance-tunneling diodes within a broad frequency range with account of electron-electron interaction
V. F. Elesin, I. Yu. Kateev, A. I. Podlivaev
Study of the potential distribution in a forward-biased silicon diode using electrostatic force microscopy
A. V. Ankudinov, A. N. Titkov, R. Laiho, V. A. Kozlov
MOCVD-grown InGaAs/GaAs/AlGaAs laser structures with a broad-area contact
P. V. Bulaev, V. A. Kapitonov, A. V. Lutetskii, A. A. Marmalyuk, D. B. Nikitin, D. N. Nikolaev, A. A. Padalitsa, N. A. Pikhtin, A. D. Bondarev, I. D. Zalevskii, I. S. Tarasov