Semiconductors

Specific features of kinetics of molecular beam epitaxy of compounds in the GaN-AlN system

A. N. Alekseev, A. É. Byrnaz, D. M. Krasovitsky, M. V. Pavlenko, S. I. Petrov, Yu. V. Pogorel’sky, I. A. Sokolov, M. A. Sokolov, M. V. Stepanov, A. P. Shkurko, V. P. Chalyi

The model of self-compensation and pinning of the Fermi level in irradiated semiconductors

V. N. Brudnyĭ, N. G. Kolin, L. S. Smirnov

On the temperature dependence of the thermoelectric power in disordered semiconductors

O. E. Parfenov, F. A. Shklyaruk

Charge transport in silver chalcogenides in the region of phase transition

S. A. Aliev, Z. F. Agaev, É. I. Zul’figarov

On the origin of the 1-eV band in photoluminescence from Cd1−x Zn x Te

V. E. Sedov, O. A. Matveev, A. I. Terent’ev, N. K. Zelenina

Metal-insulator transition in chromium-doped Pb1−x Ge x Te alloys

E. P. Skipetrov, F. A. Pakpur, N. A. Pichugin, V. E. Slyn’ko

Features of electrical conductivity in the n-ZrNiSn intermetallic semiconductor heavily doped with the In acceptor impurity

V. A. Romaka, Yu. V. Stadnyk, V. V. Romaka, D. Fruchart, Yu. K. Gorelenko, V. F. Chekurin, A. M. Goryn’

Out-diffusion of impurity via the kick-out mechanism during gettering

O. V. Aleksandrov, A. A. Krivoruchko

A study of isotype photosensitive heterostructures (intrinsic oxide)-n-InSe prepared by long-term thermal oxidation

Z. D. Kovalyuk, O. N. Sydor, V. N. Katerinchuk, V. V. Netyaga

Electroreflectance spectra of InGaN/AlGaN/GaN quantum-well heterostructures

L. P. Avakyants, M. L. Badgutdinov, P. Yu. Bokov, A. V. Chervyakov, S. S. Shirokov, A. E. Yunovich, A. A. Bogdanov, E. D. Vasil’eva, D. A. Nikolaev, A. V. Feopentov

Formation, crystal structure, and properties of silicon with buried iron disilicide nanocrystallites on Si (100) substrates

N. G. Galkin, D. L. Goroshko, V. O. Polyarnyĭ, E. A. Chusovitin, A. K. Gutakovskiĭ, A. V. Latyshev, Y. Khang

Scattering of electrons by confined interface polar optical phonons in a double-barrier heterostructure

J. Požela, K. Požela, V. Jucienė

Nonlinear effects in spin relaxation of cavity polaritons

D. D. Solnyshkov, I. A. Shelykh, M. M. Glazov, G. Malpuech, T. Amand, P. Renucci, X. Marie, A. V. Kavokin

Effect of spin-orbit coupling on the spectrum of two-dimensional electrons in a magnetic field

P. S. Alekseev, M. V. Yakunin, I. N. Yassievich

Transient current in thin layers of disordered organic materials under conditions of nonequilibrium charge carrier transport

V. R. Nikitenko, A. P. Tyutnev

Electroluminescence from nanostructured silicon embedded in anodic alumina

S. K. Lazarouk, D. A. Sasinovich, P. S. Katsuba, V. A. Labunov, A. A. Leshok, V. E. Borisenko

Combustion and explosion of nanostructured silicon in microsystem devices

S. K. Lazaruk, A. V. Dolbik, V. A. Labunov, V. E. Borisenko

Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures

A. G. Zhdan, N. F. Kukharskaya, V. G. Naryshkina, G. V. Chucheva

Electroluminescence spectra of ultraviolet light-emitting diodes based on p-n-heterostructures coated with phosphors

N. A. Gal’china, L. M. Kogan, N. P. Soshchin, S. S. Shirokov, A. E. Yunovich

Viktor Il’ich Fistul’ (dedicated to his 80th birthday)