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Erschienen in:
Market and applications for NAND Flash memories Kapitel lesen Erstes Kapitel lesen

2010 | OriginalPaper | Buchkapitel

8. Sensing circuits

verfasst von : L. Crippa, R. Micheloni

Erschienen in: Inside NAND Flash Memories

Verlag: Springer Netherlands

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Abstract

The reading operation is designed to address a memory cell and extrapolate the information stored therein. In the case of a NAND-type Flash memory, the memory cells are connected in series, in groups (strings) of 2k cells, up to 64.

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Vorheriges Kapitel NAND DDR interface
Nächstes Kapitel Parasitic effects and verify circuits
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Metadaten
Titel
Sensing circuits
verfasst von
L. Crippa
R. Micheloni
Copyright-Jahr
2010
Verlag
Springer Netherlands
Buch
Inside NAND Flash Memories

Print ISBN: 978-90-481-9430-8

Electronic ISBN: 978-90-481-9431-5

Copyright-Jahr: 2010

DOI
https://doi.org/10.1007/978-90-481-9431-5_8

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