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2013 | OriginalPaper | Buchkapitel

6. Silicon Nanoparticles-Based Light Emitting Capacitors

verfasst von : A. Morales Sánchez, J. Barreto, C. Domínguez Horna, M. Aceves Mijares, J. A. Luna López, L. Licea Jiménez

Erschienen in: Silicon-based Nanomaterials

Verlag: Springer New York

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Abstract

This chapter is focused on the study of the microstructural, optical, electrical, and electro-optical properties of Si-nanoparticles (Si-nps) embedded in a silica matrix for light emitting devices applications. Si-nps were created from silicon-rich oxide [SRO, (\(\mathrm{{SiO}}_\mathrm{x}\), \(\mathrm{x}<2\))] films which are deposited by low pressure chemical vapor deposition and followed by a thermal annealing at high temperature. The composition, microstructure, and optical properties of SRO films are analyzed as a function of the silicon excess and thermal annealing temperature. Once the properties of these materials are known, SRO films which exhibited the best photoluminescent (strongest PL) properties were chosen in order to analyze their electrical and electroluminescent (EL) properties. Simple Metal–Oxide–Semiconductor structures using the SRO films as the dielectric layer were fabricated for these studies. Blue and red EL was observed by changing the Si-np size from 1.5 to 2.7 nm embedded in the silica matrix, respectively. EL is ascribed to the charge injection into the Si-nps embedded in the SRO films through a balanced transport network. The EL emission is observed with the naked eye and in daylight conditions on the whole area of devices. Therefore, these results prove the feasibility to obtain LECs by using simple capacitors with SRO films as the active layer.

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Literatur
1.
Zurück zum Zitat Canham, L.T.: Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046–1048 (1990)CrossRef Canham, L.T.: Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl. Phys. Lett. 57, 1046–1048 (1990)CrossRef
2.
Zurück zum Zitat Chang, I.M., Pan, S.C., Chen, Y.F.: Light-induced degradation on porous silicon. Phys. Rev. B 48, 8747–8750 (1993)CrossRef Chang, I.M., Pan, S.C., Chen, Y.F.: Light-induced degradation on porous silicon. Phys. Rev. B 48, 8747–8750 (1993)CrossRef
3.
Zurück zum Zitat Kapetanakis, E., Normand, P., Tsoukalas, D., Beltsios, K., Stoemenos, J., Zhang, S., Van den Berg, J.: Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si\(^{+}\) implantation and annealing. Appl. Phys. Lett. 77(21), 3450–3452 (2000)CrossRef Kapetanakis, E., Normand, P., Tsoukalas, D., Beltsios, K., Stoemenos, J., Zhang, S., Van den Berg, J.: Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si\(^{+}\) implantation and annealing. Appl. Phys. Lett. 77(21), 3450–3452 (2000)CrossRef
4.
Zurück zum Zitat Jambois, O., Rinnert, H., Devaux, X., Vergnat, M.: Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films. J. Appl. Phys. 98, 046105 (2005)CrossRef Jambois, O., Rinnert, H., Devaux, X., Vergnat, M.: Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films. J. Appl. Phys. 98, 046105 (2005)CrossRef
5.
Zurück zum Zitat Gong-Ru, L., Chun-Jung, L.: Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate. J. Appl. Phys. 95(12), 8484–8486 (2004)CrossRef Gong-Ru, L., Chun-Jung, L.: Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO2/Si substrate. J. Appl. Phys. 95(12), 8484–8486 (2004)CrossRef
6.
Zurück zum Zitat Aceves, M., Carrillo, J., Carranza, J., Calleja, W., Falcony, C., Rosales, P.: Duality metal oxide semiconductor-PN junction in the Al/silicon rich oxide/Si structure as a radiation sensor. Thin Solid Films 373, 134–136 (2000)CrossRef Aceves, M., Carrillo, J., Carranza, J., Calleja, W., Falcony, C., Rosales, P.: Duality metal oxide semiconductor-PN junction in the Al/silicon rich oxide/Si structure as a radiation sensor. Thin Solid Films 373, 134–136 (2000)CrossRef
7.
Zurück zum Zitat DiMaria, D.J., Kirtley, J.R., Pakulis, E.J., Dong, D.W., Kuan, T.S., Pesavento, F.L., Theis, T.N., Cutro, J.A., Brorson, S.D.: Electroluminescence studies in silicon dioxide films containing tiny silicon islands. J. Appl. Phys. 56(2), 401–416 (1984)CrossRef DiMaria, D.J., Kirtley, J.R., Pakulis, E.J., Dong, D.W., Kuan, T.S., Pesavento, F.L., Theis, T.N., Cutro, J.A., Brorson, S.D.: Electroluminescence studies in silicon dioxide films containing tiny silicon islands. J. Appl. Phys. 56(2), 401–416 (1984)CrossRef
8.
Zurück zum Zitat Aceves, M., Falcony, C., Reynoso, A., Calleja, W., Torres, A.: The conduction properties of the silicon/off-stoichiometry-SiO\(_{2}\) diode. Solid-State Electronics 39, 637–644 (1996)CrossRef Aceves, M., Falcony, C., Reynoso, A., Calleja, W., Torres, A.: The conduction properties of the silicon/off-stoichiometry-SiO\(_{2}\) diode. Solid-State Electronics 39, 637–644 (1996)CrossRef
9.
Zurück zum Zitat Morales, A., Domínguez, C., Barreto, J., Riera, M., Aceves, M., Luna, J.A., Yu, Z., Kiebach, R.: Spectroscopical analysis of luminescent silicon rich oxide films. Rev. Mex. Fís. 53, 279–282 (2007) Morales, A., Domínguez, C., Barreto, J., Riera, M., Aceves, M., Luna, J.A., Yu, Z., Kiebach, R.: Spectroscopical analysis of luminescent silicon rich oxide films. Rev. Mex. Fís. 53, 279–282 (2007)
10.
Zurück zum Zitat Lin, ChJ: Lin, G.R.: Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film. IEEE J. Quantum Electron. 41, 441–447 (2005)CrossRef Lin, ChJ: Lin, G.R.: Defect-enhanced visible electroluminescence of multi-energy silicon-implanted silicon dioxide film. IEEE J. Quantum Electron. 41, 441–447 (2005)CrossRef
11.
Zurück zum Zitat Song, H.Z., Bao, X.M., Li, N.S., Zhang, J.Y.: Relation between electroluminescence and photoluminescence of Si\(^{+}\)-implanted SiO\(_{2}\). J. Appl. Phys. 82, 4028–4032 (1997)CrossRef Song, H.Z., Bao, X.M., Li, N.S., Zhang, J.Y.: Relation between electroluminescence and photoluminescence of Si\(^{+}\)-implanted SiO\(_{2}\). J. Appl. Phys. 82, 4028–4032 (1997)CrossRef
12.
Zurück zum Zitat Lin, G.R., Lin, ChJ, Lin, ChK, Chou, L.J., Chueh, Y.L.: Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO\(_{2}\). J. Appl. Phys. 97, 094306 (2005)CrossRef Lin, G.R., Lin, ChJ, Lin, ChK, Chou, L.J., Chueh, Y.L.: Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO\(_{2}\). J. Appl. Phys. 97, 094306 (2005)CrossRef
13.
Zurück zum Zitat Lin, G.R.: Lin, Ch.J: Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO\(_{2}\)/Si substrate. J. Appl. Phys. 95, 8484–8486 (2004)CrossRef Lin, G.R.: Lin, Ch.J: Improved blue-green electroluminescence of metal-oxide-semiconductor diode fabricated on multirecipe Si-implanted and annealed SiO\(_{2}\)/Si substrate. J. Appl. Phys. 95, 8484–8486 (2004)CrossRef
14.
Zurück zum Zitat Walters, R.J., Carreras, J., Feng, T., Bell, L.D., Atwater, H.A.: Silicon Nanocrystal Field-Effect Light-Emitting Devices. IEEE J. Sel. Top. Quantum Electron. 12, 1647–1656 (2006)CrossRef Walters, R.J., Carreras, J., Feng, T., Bell, L.D., Atwater, H.A.: Silicon Nanocrystal Field-Effect Light-Emitting Devices. IEEE J. Sel. Top. Quantum Electron. 12, 1647–1656 (2006)CrossRef
15.
Zurück zum Zitat Linnros, J., Lalic, N., Knápek, P., Luterová, K., Kocka, J., Fejfar, A., Pelant, I.: Instabilities in electroluminescent porous silicon diodes. Appl. Phys. Lett. 69, 833–835 (1996)CrossRef Linnros, J., Lalic, N., Knápek, P., Luterová, K., Kocka, J., Fejfar, A., Pelant, I.: Instabilities in electroluminescent porous silicon diodes. Appl. Phys. Lett. 69, 833–835 (1996)CrossRef
16.
Zurück zum Zitat Irrera, A., Iacona, F., Crupi, I., Presti, C.D., Franzò, G., Bongiorno, C., Sanfilippo, D., Di Stefano, G., Piana, A., Fallica, P.G., Canino, A., Priolo, F.: Electroluminescence and transport properties in amorphous silicon nanostructures. Nanotechnology 17, 1428–1436 (2006) Irrera, A., Iacona, F., Crupi, I., Presti, C.D., Franzò, G., Bongiorno, C., Sanfilippo, D., Di Stefano, G., Piana, A., Fallica, P.G., Canino, A., Priolo, F.: Electroluminescence and transport properties in amorphous silicon nanostructures. Nanotechnology 17, 1428–1436 (2006)
17.
Zurück zum Zitat Gebel, T., Rebohle, L., Sun, J., Skopura, W., Nazarov, A.N., Osiyuk, I.: Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters. Physica E 16, 499–504 (2003)CrossRef Gebel, T., Rebohle, L., Sun, J., Skopura, W., Nazarov, A.N., Osiyuk, I.: Correlation of charge trapping and electroluminescence in highly efficient Si-based light emitters. Physica E 16, 499–504 (2003)CrossRef
18.
Zurück zum Zitat Valenta, J., Lalic, N.: J. Linnros.: Electroluminescence microscopy and spectroscopy of silicon nanocrystals in thin SiO\(_{2}\) layers. Opt. Mater. 17, 45–50 (2001)CrossRef Valenta, J., Lalic, N.: J. Linnros.: Electroluminescence microscopy and spectroscopy of silicon nanocrystals in thin SiO\(_{2}\) layers. Opt. Mater. 17, 45–50 (2001)CrossRef
19.
Zurück zum Zitat Franzò, G., Irrera, A., Moreira, E.C., Miritello, M., Iacona, F., Sanfilippo, D., Di Stefano, G., Fallica, P.G., Priolo, F.: Electroluminescence of silicon nanocrystals in MOS structures. Appl. Phys. A 74, 1–5 (2002)CrossRef Franzò, G., Irrera, A., Moreira, E.C., Miritello, M., Iacona, F., Sanfilippo, D., Di Stefano, G., Fallica, P.G., Priolo, F.: Electroluminescence of silicon nanocrystals in MOS structures. Appl. Phys. A 74, 1–5 (2002)CrossRef
20.
Zurück zum Zitat Walters, R.J., Bourianoff, G.I., Atwater, H.A.: Field-effect electroluminescence in silicon nanocrystals. Nature Mater. 4, 143–146 (2005)CrossRef Walters, R.J., Bourianoff, G.I., Atwater, H.A.: Field-effect electroluminescence in silicon nanocrystals. Nature Mater. 4, 143–146 (2005)CrossRef
21.
Zurück zum Zitat Cho, K.S., Park, N., Kim, T., Kim, K., Sung, G.Y., Shin, J.H.: High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer. Appl. Phys. Lett. 86, 071909 (2005)CrossRef Cho, K.S., Park, N., Kim, T., Kim, K., Sung, G.Y., Shin, J.H.: High efficiency visible electroluminescence from silicon nanocrystals embedded in silicon nitride using a transparent doping layer. Appl. Phys. Lett. 86, 071909 (2005)CrossRef
22.
Zurück zum Zitat Barreto, J., Perálvarez, M., Rodriguez, J.A., Morales, A., Riera, M., López, M., Garrido, B., Lechuga, L.M., Domínguez, C.: Pulsed electroluminescence in silicon nanocrystals-based devices fabricated by PECVD. Physica E 38, 193–196 (2007) Barreto, J., Perálvarez, M., Rodriguez, J.A., Morales, A., Riera, M., López, M., Garrido, B., Lechuga, L.M., Domínguez, C.: Pulsed electroluminescence in silicon nanocrystals-based devices fabricated by PECVD. Physica E 38, 193–196 (2007)
23.
Zurück zum Zitat Perálvarez, M., Carreras, J., Barreto, J., Morales, A., Dominguez, C., Garrido, B.: Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks. Appl. Phys. Lett. 92, 241104 (2008)CrossRef Perálvarez, M., Carreras, J., Barreto, J., Morales, A., Dominguez, C., Garrido, B.: Efficiency and reliability enhancement of silicon nanocrystal field-effect luminescence from nitride-oxide gate stacks. Appl. Phys. Lett. 92, 241104 (2008)CrossRef
24.
Zurück zum Zitat Lacombe, A., Kadari, B., Beaudoin, F., Barba, D., Martin, F., Ross, G.G.: Electroluminescence microspectroscopy of silicon nanocrystals obtained by Si+ ion implantation in SiO\(_{2}\). Nanotechnology 19, 465702 (2008)CrossRef Lacombe, A., Kadari, B., Beaudoin, F., Barba, D., Martin, F., Ross, G.G.: Electroluminescence microspectroscopy of silicon nanocrystals obtained by Si+ ion implantation in SiO\(_{2}\). Nanotechnology 19, 465702 (2008)CrossRef
25.
Zurück zum Zitat Fernández, González: A. A., Aceves Mijares, M., Morales Sánchez, A., Leyva, K. M.: Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors. J. Appl. Phys. 108, 043105 (2010)CrossRef Fernández, González: A. A., Aceves Mijares, M., Morales Sánchez, A., Leyva, K. M.: Intense whole area electroluminescence from low pressure chemical vapor deposition-silicon-rich oxide based light emitting capacitors. J. Appl. Phys. 108, 043105 (2010)CrossRef
26.
Zurück zum Zitat Cen, Z.H., Chen, T.P., Liu, Z., Liu, Y., Ding, L., Yang, M., Wong, J.I., Yu, S.F., Goh, W.P.: Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film. Opt. Express 18, 20439–20444 (2010)CrossRef Cen, Z.H., Chen, T.P., Liu, Z., Liu, Y., Ding, L., Yang, M., Wong, J.I., Yu, S.F., Goh, W.P.: Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film. Opt. Express 18, 20439–20444 (2010)CrossRef
27.
Zurück zum Zitat Cheong, H.J., Tanaka, A., Hippo, D., Usami, K., Suchiya, Y., Mizuta, H., Oda, S.: Visible Electroluminescence from spherical-shaped silicon nanocrystals. Jpn. J. Appl. Phys. 47, 8137–8140 (2008) Cheong, H.J., Tanaka, A., Hippo, D., Usami, K., Suchiya, Y., Mizuta, H., Oda, S.: Visible Electroluminescence from spherical-shaped silicon nanocrystals. Jpn. J. Appl. Phys. 47, 8137–8140 (2008)
28.
Zurück zum Zitat Pai, P.G., Chao, S.S., Takagi, Y.: Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 4(3), 689–694 (1986)CrossRef Pai, P.G., Chao, S.S., Takagi, Y.: Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition. J. Vac. Sci. Technol. A 4(3), 689–694 (1986)CrossRef
29.
Zurück zum Zitat Ay, F., Aydinli, A.: Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides. Opt. Mater. 26, 33–46 (2004)CrossRef Ay, F., Aydinli, A.: Comparative investigation of hydrogen bonding in silicon based PECVD grown dielectrics for optical waveguides. Opt. Mater. 26, 33–46 (2004)CrossRef
30.
Zurück zum Zitat Fazio, E., Barletta, E., Barreca, F., Neri, F.: Investigation of nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition. J. Vac. Sci. Technol. B 23(2), 519–524 (2005)CrossRef Fazio, E., Barletta, E., Barreca, F., Neri, F.: Investigation of nanocrystalline silicon phase embedded in SiOx thin films grown by pulsed laser deposition. J. Vac. Sci. Technol. B 23(2), 519–524 (2005)CrossRef
31.
Zurück zum Zitat Martinet, C., Devine, R.A.B.: Analysis of the vibrational mode spectra of amorphous SiO2 films. J. Appl. Phys. 77(9), 4343–4348 (1995)CrossRef Martinet, C., Devine, R.A.B.: Analysis of the vibrational mode spectra of amorphous SiO2 films. J. Appl. Phys. 77(9), 4343–4348 (1995)CrossRef
32.
Zurück zum Zitat Kouvatsos, D.N., Ioannou-Sougleridis, V., Nassiopoulou, A.G.: Charging effects in silicon nanocrystals embedded in SiO\(_{2}\) films. Mater. Sci. and Eng. B 101, 270–274 (2003)CrossRef Kouvatsos, D.N., Ioannou-Sougleridis, V., Nassiopoulou, A.G.: Charging effects in silicon nanocrystals embedded in SiO\(_{2}\) films. Mater. Sci. and Eng. B 101, 270–274 (2003)CrossRef
33.
Zurück zum Zitat Kameda, E., Matsuda, T., Emura, Y., Ohzone, T.: Fowler-Nordheim tunneling in MOS capacitors with Si-implanted SiO\(_{2}\). Solid-State Electronics 42(11), 2105–2111 (1998)CrossRef Kameda, E., Matsuda, T., Emura, Y., Ohzone, T.: Fowler-Nordheim tunneling in MOS capacitors with Si-implanted SiO\(_{2}\). Solid-State Electronics 42(11), 2105–2111 (1998)CrossRef
34.
Zurück zum Zitat Lelis, A.J., Oldhan, T.R.: Time dependence of switching oxide traps. IEEE Transact. Nuc. Sci. 41(6), 1835–1843 (1994)CrossRef Lelis, A.J., Oldhan, T.R.: Time dependence of switching oxide traps. IEEE Transact. Nuc. Sci. 41(6), 1835–1843 (1994)CrossRef
35.
Zurück zum Zitat Perera, R., Ikeda, A., Hattori, R., Kuroki, Y.: Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation. Microelectron. Eng. 65, 357–370 (2003)CrossRef Perera, R., Ikeda, A., Hattori, R., Kuroki, Y.: Trap assisted leakage current conduction in thin silicon oxynitride films grown by rapid thermal oxidation combined microwave excited plasma nitridation. Microelectron. Eng. 65, 357–370 (2003)CrossRef
36.
Zurück zum Zitat Morales-Sánchez, A., Barreto, J., Domínguez, C., Aceves-Mijares, M., Perálvarez, M., Garrido, B., Luna-López, J.: A.: DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films. Nanotechnology 21, 085710 (2010) Morales-Sánchez, A., Barreto, J., Domínguez, C., Aceves-Mijares, M., Perálvarez, M., Garrido, B., Luna-López, J.: A.: DC and AC electroluminescence in silicon nanoparticles embedded in silicon-rich oxide films. Nanotechnology 21, 085710 (2010)
37.
Zurück zum Zitat Yu, Z., Aceves, M., Ipiña, M.A.: Single electron charging and transport in silicon rich oxide. Nanotechnology 17, 3962–3967 (2006)CrossRef Yu, Z., Aceves, M., Ipiña, M.A.: Single electron charging and transport in silicon rich oxide. Nanotechnology 17, 3962–3967 (2006)CrossRef
38.
Zurück zum Zitat Morales-Sánchez, A., Barreto, J., Domínguez, C., Aceves, M., Yu, Z., Luna-López, J.A.: Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films. Nanotechnology 19, 165401 (2008)CrossRef Morales-Sánchez, A., Barreto, J., Domínguez, C., Aceves, M., Yu, Z., Luna-López, J.A.: Coulomb blockade effects in silicon nanoparticles embedded in thin silicon-rich oxide films. Nanotechnology 19, 165401 (2008)CrossRef
39.
Zurück zum Zitat Salonidou, A., Nassiopoulou, A.G., Giannakopoulos, K., Travlos, A., Ioannou-Sougleridis, V., Tsoi, E.: Growth of two-dimensional arrays of silicon nanocrystals in thin SiO\(_{2}\) layers by low pressure chemical vapour deposition and high temperature annealing/oxidation. Investigation of their charging properties. Nanotechnology 15, 1233–1239 (2004) Salonidou, A., Nassiopoulou, A.G., Giannakopoulos, K., Travlos, A., Ioannou-Sougleridis, V., Tsoi, E.: Growth of two-dimensional arrays of silicon nanocrystals in thin SiO\(_{2}\) layers by low pressure chemical vapour deposition and high temperature annealing/oxidation. Investigation of their charging properties. Nanotechnology 15, 1233–1239 (2004)
40.
Zurück zum Zitat Afanas’ev, V. V., Stesmans, A.: Charge state of paramagnetic E’ centre in thermal SiO\(_{2}\) layers on silicon. J. Phys.: Condens. Matter12, 2285–2290 (2000) Afanas’ev, V. V., Stesmans, A.: Charge state of paramagnetic E’ centre in thermal SiO\(_{2}\) layers on silicon. J. Phys.: Condens. Matter12, 2285–2290 (2000)
41.
Zurück zum Zitat Ng, C.Y., Liu, Y., Chen, T.P., Tse, M.S.: Charging/discharging of silicon nanocrystals embedded in an SiO\(_{2}\) matrix inducing reduction/recovery in the total capacitance and tunneling current. Smart Mater. Struct. 15, S43–S46 (2006)CrossRef Ng, C.Y., Liu, Y., Chen, T.P., Tse, M.S.: Charging/discharging of silicon nanocrystals embedded in an SiO\(_{2}\) matrix inducing reduction/recovery in the total capacitance and tunneling current. Smart Mater. Struct. 15, S43–S46 (2006)CrossRef
42.
Zurück zum Zitat Perálvarez, M., Barreto, J., Carreras, J., Morales, A., Navarro, D., Lebour, Y., Domínguez, C., Garrido, B.: Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition. Nanotechnology 20, 405201 (2009)CrossRef Perálvarez, M., Barreto, J., Carreras, J., Morales, A., Navarro, D., Lebour, Y., Domínguez, C., Garrido, B.: Si-nanocrystal-based LEDs fabricated by ion implantation and plasma-enhanced chemical vapour deposition. Nanotechnology 20, 405201 (2009)CrossRef
43.
Zurück zum Zitat Luna-López, J.A., Morales-Sánchez, A., Aceves-Mijares, M., Yu, Z., Domínguez, C.: Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films. J. Vac. Sci. Technol. A 27(1), 57–62 (2009)CrossRef Luna-López, J.A., Morales-Sánchez, A., Aceves-Mijares, M., Yu, Z., Domínguez, C.: Analysis of surface roughness and its relationship with photoluminescence properties of silicon-rich oxide films. J. Vac. Sci. Technol. A 27(1), 57–62 (2009)CrossRef
44.
Zurück zum Zitat Flores, F.F., Aceves, M., Carrillo, J., Domínguez, J., Falcony, C.: Photoluminescence and cathodoluminescence characteristics of SiO\(_{2}\) and SRO films implanted with Si. Superficies y Vacío 18, 7–13 (2005) Flores, F.F., Aceves, M., Carrillo, J., Domínguez, J., Falcony, C.: Photoluminescence and cathodoluminescence characteristics of SiO\(_{2}\) and SRO films implanted with Si. Superficies y Vacío 18, 7–13 (2005)
45.
Zurück zum Zitat Lopez, R., Aceves, M., Yu Z., Falcony, C., Cathodoluminescence of Silicon Rich Oxide with nitrogen incorporated. 4th International Conference on Electrical and Electronics, Engineering, pp. 341–344 (2007) Lopez, R., Aceves, M., Yu Z., Falcony, C., Cathodoluminescence of Silicon Rich Oxide with nitrogen incorporated. 4th International Conference on Electrical and Electronics, Engineering, pp. 341–344 (2007)
46.
Zurück zum Zitat Perálvarez, M., García, C., López, M., Garrido, B., Barreto, J., Domínguez, C., Rodríguez, J.A.: Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition. Appl. Phys. Lett. 89, 051112 (2006) Perálvarez, M., García, C., López, M., Garrido, B., Barreto, J., Domínguez, C., Rodríguez, J.A.: Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor deposition. Appl. Phys. Lett. 89, 051112 (2006)
47.
Zurück zum Zitat Lin, ChF: Liu, C.W., Chen, M.J., Lee, M.H., Lin, I.C.: Electroluminescence at Si band gap energy based on metal-oxide-silicon structures. J of. Appl. Phys. 87(12), 8793–8795 (2000) Lin, ChF: Liu, C.W., Chen, M.J., Lee, M.H., Lin, I.C.: Electroluminescence at Si band gap energy based on metal-oxide-silicon structures. J of. Appl. Phys. 87(12), 8793–8795 (2000)
48.
Zurück zum Zitat Lin, ChF: Liu, C.W., Chen, M.J., Lee, M.H., Lin, I.C.: Infrared electroluminescence from metal-oxide-semiconductor structures on silicon. J. Phys. Condens. Matter 12, L205–L210 (2000)CrossRef Lin, ChF: Liu, C.W., Chen, M.J., Lee, M.H., Lin, I.C.: Infrared electroluminescence from metal-oxide-semiconductor structures on silicon. J. Phys. Condens. Matter 12, L205–L210 (2000)CrossRef
49.
Zurück zum Zitat Ray, M., Hossain, S.M., Klie, R.F., Banerjee, K., Ghosh, S.: Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions. Nanotechnology 21, 505602 (2010)CrossRef Ray, M., Hossain, S.M., Klie, R.F., Banerjee, K., Ghosh, S.: Free standing luminescent silicon quantum dots: evidence of quantum confinement and defect related transitions. Nanotechnology 21, 505602 (2010)CrossRef
50.
Zurück zum Zitat Morales-Sánchez, A., Aceves-Mijares, M., Monfil-Leyva, K., González, A.A., Luna-López, J.A., Carrillo, J., Domínguez, C., Barreto, J., Flores-Gracia, F.J.: Strong blue and red luminescence in silicon nanoparticles based light emitting capacitors. Applied Physics Letters 99, 171102 (2011) Morales-Sánchez, A., Aceves-Mijares, M., Monfil-Leyva, K., González, A.A., Luna-López, J.A., Carrillo, J., Domínguez, C., Barreto, J., Flores-Gracia, F.J.: Strong blue and red luminescence in silicon nanoparticles based light emitting capacitors. Applied Physics Letters 99, 171102 (2011)
Metadaten
Titel
Silicon Nanoparticles-Based Light Emitting Capacitors
verfasst von
A. Morales Sánchez
J. Barreto
C. Domínguez Horna
M. Aceves Mijares
J. A. Luna López
L. Licea Jiménez
Copyright-Jahr
2013
Verlag
Springer New York
DOI
https://doi.org/10.1007/978-1-4614-8169-0_6

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