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2017 | OriginalPaper | Buchkapitel

Simulations of Transport Characteristics of Core-Shell Nanowire Transistors with Electrostatic All-Around Gate

verfasst von : Tomasz Palutkiewicz, Maciej Wołoszyn, Bartłomiej J. Spisak

Erschienen in: Information Technology and Computational Physics

Verlag: Springer International Publishing

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Abstract

A mathematical model of the investigated semiconductor core-shell nanowire transistor with all-around gate, computation methods and calculated transport characteristics of the device are presented. The influence of applied gate voltage and drain-source voltage on the potential energy profile of the system is determined, electric current flowing through it is calculated and dependence of operation regime of the device on these voltages is discussed.

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Metadaten
Titel
Simulations of Transport Characteristics of Core-Shell Nanowire Transistors with Electrostatic All-Around Gate
verfasst von
Tomasz Palutkiewicz
Maciej Wołoszyn
Bartłomiej J. Spisak
Copyright-Jahr
2017
DOI
https://doi.org/10.1007/978-3-319-44260-0_14