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2010 | OriginalPaper | Buchkapitel

5. Single Crystals Grown Under Unconstrained Conditions

verfasst von : Ichiro Sunagawa

Erschienen in: Springer Handbook of Crystal Growth

Verlag: Springer Berlin Heidelberg

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Abstract

Based on detailed investigations on morphology (evolution and variation in external forms), surface microtopography of crystal faces (spirals and etch figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growth and post-growth history under unconstrained condition. The information is useful not only in finding appropriate way to growing highly perfect and homogeneous single crystals, but also in deciphering letters sent from the depth of the Earth and the Space. It is also useful in discriminating synthetic from natural gemstones. In this chapter, available methods to obtain molecular information are briefly summarized, and actual examples to demonstrate the importance of this type of investigations are selected from both natural minerals (diamond, quartz, hematite, corundum, beryl, phlogopite) and synthetic crystals (SiC, diamond, corundum, beryl).

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Vorheriges Kapitel Generation and Propagation of Defects During Crystal Growth

Nächstes Kapitel Defect Formation During Crystal Growth from the Melt

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Titel: Single Crystals Grown Under Unconstrained Conditions
verfasst von: Ichiro Sunagawa
Verlag: Springer Berlin Heidelberg
Buch: Springer Handbook of Crystal Growth
Print ISBN: 978-3-540-74182-4

Electronic ISBN: 978-3-540-74761-1

Copyright-Jahr: 2010
DOI: https://doi.org/10.1007/978-3-540-74761-1_5

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