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Journal of Computational Electronics

Erschienen in:

15.08.2023

Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric

verfasst von: Aohang Zhang, Wensuo Chen, Jiaweiwen Huang, Qisheng Yu, Yuying Wang, Jian Li

Erschienen in: Journal of Computational Electronics | Ausgabe 5/2023

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Abstract

In this paper, the single-event effects of Schottky contact super barrier rectifier (SSBR) and conventional super barrier rectifier (SBR) as comparison structure are simulated and discussed. The high-k dielectric has a larger dielectric constant and a larger physical thickness at the same equivalent oxide thickness (EOT). Therefore, it is used to enhance the single-event gate rupture (SEGR) performance of the devices. Simulation results show that the SEGR performance of SSBR and SBR is significantly improved after using high-k dielectric as the gate dielectric. Furthermore, due to the absence of a parasitic bipolar junction transistor (BJT), SSBR has a higher single-event burnout (SEB) performance than conventional SBR. In conclusion, SSBR has a good performance of single-event effect (SEGR and SEB) and is better than that of SBR after using high-k dielectric as the gate dielectric.

Vorheriger Artikel Finite-element simulation of interfacial resistive switching by Schottky barrier height modulation

Nächster Artikel Modeling of inversion layer capacitance of III-V double gate MOSFETs using a neural network-based regression technique

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Titel: Single-event effect hardening of the Schottky contact super barrier rectifier (SSBR) with high-k gate dielectric
verfasst von: Aohang Zhang
Wensuo Chen
Jiaweiwen Huang
Qisheng Yu
Yuying Wang
Jian Li
Publikationsdatum: 15.08.2023
Verlag: Springer US
Erschienen in: Journal of Computational Electronics / Ausgabe 5/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-023-02088-8

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Large-signal behavior modeling of GaN HEMTs using SSA augmented ELM algorithm

Resistance saturation in semi-conducting polyacetylene molecular wires

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