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Erschienen in: Journal of Materials Engineering and Performance 9/2020

19.06.2020

Sinterability of Silicon Carbide and Boron Carbide under Single-Mode Microwave Fields

verfasst von: Selva Vennila Raju, Michael Kornecki, Raymond E. Brennan

Erschienen in: Journal of Materials Engineering and Performance | Ausgabe 9/2020

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Abstract

The feasibility of processing silicon carbide (SiC) and boron carbide (B4C) using a 2.45 GHz single-mode microwave system has been investigated. In order to determine the appropriate sintering conditions, samples were processed under various electric/magnetic (E/H) field ratios. Proportional 50% E/H-field ratios and 100% H-field conditions resulted in higher sample temperatures up to 1500 °C under equivalent microwave power. Sinterability was improved by adding B4C and carbon to SiC, but limited to a thin outer layer of the pellet. While partial densification was observed under all conditions, isolated regions of full densification in microwave-processed B4C samples were observed under 100% H-field mode. Microstructural analysis of microwave-processed SiC with and without additives indicated non-uniform sintering, while B4C showed evidence of relatively homogeneous microstructures.

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Metadaten
Titel
Sinterability of Silicon Carbide and Boron Carbide under Single-Mode Microwave Fields
verfasst von
Selva Vennila Raju
Michael Kornecki
Raymond E. Brennan
Publikationsdatum
19.06.2020
Verlag
Springer US
Erschienen in
Journal of Materials Engineering and Performance / Ausgabe 9/2020
Print ISSN: 1059-9495
Elektronische ISSN: 1544-1024
DOI
https://doi.org/10.1007/s11665-020-04895-7

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