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Erschienen in:
19.02.2016
SiO2–Fe2O3–MoO3 ceramic system doped with Nb2O5, a study of the dielectric temperature dependence
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2016
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Abstract
In this paper the temperature dependence, structure and electrical properties of the ceramic system SiO2–MoO3–Fe2O3:Nb2O5 was studied. This material can be used for temperature sensor applications. The samples with the composition (100 − x)(SiO2–Fe2O3–MoO3) + x(Nb2O5), with x = 0; 0.3; 0.5 (mol%) were prepared through the solid state reaction method. The structure of the samples was analyzed by X-Ray Powder Diffraction together with the Rietveld refinement. Their morphology was studied by scanning electron microscopy with Energy-Dispersive Spectroscopy analysis. The dielectric properties were measured in the frequency range 1 Hz–1 MHz as a function of temperature. The Temperature Capacitance Coefficient was measured for all samples. The obtained results are discussed and correlated with the preparation method.