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Erschienen in:
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2011 | OriginalPaper | Buchkapitel

1. Soft Errors from Space to Ground: Historical Overview, Empirical Evidence, and Future Trends

verfasst von : Tino Heijmen

Erschienen in: Soft Errors in Modern Electronic Systems

Verlag: Springer US

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Abstract

Soft errors induced by radiation, which started as a rather exotic failure mechanism causing anomalies in satellite equipment, have become one of the most challenging issues that impact the reliability of modern electronic systems, also in ground-level applications. Many efforts have been spent in the last decades to measure, model, and mitigate radiation effects, applying numerous techniques approaching the problem at various abstraction levels. This chapter presents a historical overview of the soft-error subject and treats several “disaster stories” from the past. Furthermore, scaling trends are discussed for the most sensitive circuit types.

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Nächstes Kapitel Single Event Effects: Mechanisms and Classification
Literatur
1.
JEDEC Standard JESD89A, “Measurement and reporting of alpha particle and terrestrial cosmic ray-induced soft errors in semiconductor devices”, Oct. 2006.
2.
D. Binder, E.C. Smith, and A.B. Holman, “Satellite anomalies from galactic cosmic rays”, IEEE Trans. Nucl. Sci., vol. NS-22, no. 6, pp. 2675–2680, 1975.CrossRef
3.
T.C. May and M.H. Woods, “A new physical mechanism for soft errors in dynamic memories”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 33–40, 1978.
4.
J.F. Ziegler et al., “IBM experiments in soft fails in computer electronics (1978–1994)”, IBM J. Res. Dev., vol. 40, no. 1, pp. 3–18, 1996.CrossRef
5.
J.F. Ziegler and W.A. Lanford, “Effect of cosmic rays on computer memories”, Science, vol. 206, pp. 776–788, 1979.CrossRef
6.
J.F. Ziegler and W.A. Lanford, “The effect of sea level cosmic rays on electronic devices”, J. Appl. Phys., vol. 52, no. 6, pp. 4305–4311, 1981.CrossRef
7.
T.J. O’Gorman, “The effect of cosmic rays on the soft error rate of a DRAM at ground level”, IEEE Trans. Electron Devices, vol. 41, no. 4, pp. 553–557, 1994.CrossRef
8.
T.J. O’Gorman, J.M. Ross, A.H. Taber, J.F. Ziegler, H.P. Muhlfeld, C.J. Montrose, H.W. Curtis, and J.L. Walsh, “Field testing for cosmic ray soft errors in semiconductor memories”, IBM J. Res. Dev., vol. 40, no. 1, pp. 41–49, 1996.CrossRef
9.
C. Lage, D. Burnett, T. McNelly, K. Baker, A. Bormann, D. Dreier, and V. Soorholtz, “Soft error rate and stored charge requirements in advanced high-density SRAMs”, in Proc. IEEE Int. Dev. Meet. (IEDM), pp. 821–824, 1993.
10.
R.C. Baumann, R.C. Baumann, T.Z. Hossain, S. Murata, and H. Kitagawa, “Boron compounds as a dominant source of alpha particles in semiconductor devices”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 297–302, 1995.
11.
R.C. Baumann, “Soft errors in advanced semiconductor devices – Part I: The three radiation sources”, IEEE Trans. Device Mater. Reliab., vol. 1, no. 1, pp. 17–22, 2001.CrossRef
12.
R.C. Baumann and E.B. Smith, “Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 152–157, 2000.
13.
14.
15.
N. Cohen, T.S. Sriram, N. Leland, D. Moyer, S. Butler, and R. Flatley, “Soft error considerations for deep-submicron CMOS circuit applications”, in Int’l Electron Devices Meeting (IEDM) Tech. Dig., pp. 315–318, 1999.
16.
R. Baumann, “The impact of technology scaling on soft error rate performance and limits to the efficacy of error correction”, in Int’l Electron Devices Meeting (IEDM) Tech. Dig., pp. 329–332, 2002.
17.
N. Seifert, P. Slankard, M. Kirsch, B. Narasimham, V. Zia, C. Brookreson, A. Vo, S. Mitra, B. Gill, and J. Maiz, “Radiation-induced soft error rates of advanced CMOS bulk devices”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 217–225, 2006.
18.
P. Roche and G. Gasiot, “Impacts of front-end and middle-end process modifications on terrestrial soft error rate”, IEEE Trans. Device Mater. Reliab., vol. 5, no. 3, pp. 382–396, 2005.CrossRef
19.
E.H. Cannon, M.S. Gordon, D.F. Heidel, A.J. KleinOsowski, P. Oldiges, K.P. Rodbell, and H.H.K. Tang, “Multi-bit upsets in 65 nm SOI SRAMs”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 195–201, 2008.
20.
T. Heijmen and B. Kruseman, “Alpha-particle induced SER of embedded SRAMs affected by variations in process parameters and by the use of process options”, Solid State Electron., vol. 49, no. 11, pp. 1783–1790, 2005.CrossRef
21.
T. Heijmen, “Spread in alpha-particle-induced soft-error rate of 90-nm embedded SRAMs”, in Proc. Int’l On-Line Testing Symp. (IOLTS), pp. 131–136, 2007.
22.
K. Osada, K. Yamaguchi, Y. Saitoh, and T. Kawahara, “Cosmic-ray multi-error immunity for SRAM, based on analysis of the parasitic bipolar effect”, in Proc. VLSI Circuit Digest of Technical papers, pp. 255–258, 2003.
23.
J.F. Ziegler, M.E. Nelson, J.D. Shell, R.J. Peterson, C.J. Gelderloos, H.P. Muhlfeld, and C.J. Montrose, “Cosmic ray soft error rates of 16-Mb DRAM memory chips”, IEEE J. Solid-State Circuits, vol. 33, no. 2, pp. 246–252, 1998.CrossRef
24.
L. Borocki, G. Schindlbeck, and C. Slayman, “Comparison of accelerated DRAM soft error rates measured at component and system level”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 482–487, 2008.
25.
T. Heijmen, P. Roche, G. Gasiot, K.R. Forbes, and D. Giot, “A comprehensive study on the soft-error rate of flip-flops from 90-nm production libraries”, IEEE Trans. Device Mater. Reliab., vol. 7, no. 1, pp. 84–96, 2007.CrossRef
26.
R.C. Baumann, “Radiation-induced soft errors in advanced semiconductor technologies”, IEEE Trans. Device Mater. Reliab., vol. 5, no. 3, pp. 305–316, 2005.MathSciNetCrossRef
27.
T. Heijmen and P. Ngan, “Radiation-induced soft errors in 90-nm and below”, presentation at 12th Annual Automotive Electronics Reliability Workshop, May 2007.
28.
N. Seifert, B. Gill, V. Zia, M. Zhang, and V. Ambrose, “On the scalability of redundancy based SER mitigation schemes”, in Proc. Int’l Conf. IC Design Techn. (ICICDT), pp. 1–9, 2007.
29.
S. Mitra, N. Seifert, M. Zhang, Q. Shi, and K.S. Kim, “Robust system design with built-in soft-error resilience”, IEEE Comput., vol. 38, no. 2, pp. 43–52, 2005.CrossRef
30.
B. Gill, N. Seifert, and V. Zia, “Comparison of alpha-particle and neutron-induced combinational and sequential logic error rates at the 32 nm technology node”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 199–205, 2009.
31.
P.E. Dodd, M.R. Shaneyfelt, J.R. Schwank, and G.L. Hash, “Neutron-induced latchup in SRAMs at ground level”, in Proc. Int’l Rel. Phys. Symp. (IRPS), pp. 51–55, 2003.
Metadaten
Titel
Soft Errors from Space to Ground: Historical Overview, Empirical Evidence, and Future Trends
verfasst von
Tino Heijmen
Copyright-Jahr
2011
Verlag
Springer US
Buch
Soft Errors in Modern Electronic Systems

Print ISBN: 978-1-4419-6992-7

Electronic ISBN: 978-1-4419-6993-4

Copyright-Jahr: 2011

DOI
https://doi.org/10.1007/978-1-4419-6993-4_1

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