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Journal of Materials Science

Erschienen in:

12.04.2021 | Electronic materials

Spin-polarized gate-tuned transport property of a four-terminal MoS₂ device: a theoretical study

verfasst von: Hong Yu, Yan Shang, Lei Pei, Guiling Zhang, Hong Yan

Erschienen in: Journal of Materials Science | Ausgabe 20/2021

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Abstract

The transport property of a four-terminal MoS₂NR/V₇(Bz)₈ device is computed within the framework of density functional theory combined with the nonequilibrium Green’s function (NEGF) technique. This device is constructed by a MoS₂ nanoribbon (MoS₂NR) as the source-to-drain channel and a spin-polarized V₇(Bz)₈ nanowire grafted on the MoS₂NR surface as the double gate channel, where the four terminals are all connected to a semi-infinite one-dimensional (1D) Au lead. The transport characteristic is explored by investigating the conductance, currents, local density of states (LDOS), and scattering states. The currents of different leads are dissimilar due to the complex interplay between the four terminals that is otherwise not present in a two-terminal setup. The most interesting feature we articulate is that the induced promising properties including negative differential resistance (NDR) behavior, input/output current switching, as well as spin-polarized lead currents can be fine-tuned by the magnitude of either source bias or gate bias. These features can be utilized in designing multi-terminal nanoelectronic devices.

Graphical abstract

Vorheriger Artikel Super short-range magnetic orderings in a multiferroic relaxor ceramic 0.41Bi(Ni1/2Zr1/2)O3–0.59PbTiO3

Nächster Artikel Electrodeposition of cuprous oxide on a porous copper framework for an improved photoelectrochemical performance

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Titel: Spin-polarized gate-tuned transport property of a four-terminal MoS2 device: a theoretical study
verfasst von: Hong Yu
Yan Shang
Lei Pei
Guiling Zhang
Hong Yan
Publikationsdatum: 12.04.2021
Verlag: Springer US
Erschienen in: Journal of Materials Science / Ausgabe 20/2021
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI: https://doi.org/10.1007/s10853-021-06046-2

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