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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 14/2020

25.05.2020

Spontaneous Faraday rotation of \({\text{C}\text{o}}_{x}{\text{F}\text{e}}_{3-x}{\text{O}}_{4}\) thin films electrodeposited under a static magnetic field

verfasst von: N. Labchir, A. Hannour, A. Ait hssi, D. Vincent, D. Jamon, J. Y. Michalon, A. Ihlal, M. Sajieddine

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 14/2020

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Abstract

\({\text{C}\text{o}}_{x}{\text{F}\text{e}}_{3-x}{\text{O}}_{4}\) (\(0<x\le 1)\) thin films were elaborated by electrodeposition under a static magnetic field on fluorine-doped tin oxide (FTO) substrates followed by an air annealing at 500 °C for 24 h. The XRD analysis revealed cubic spinel structure with an average crystallite size ranging from 40 to 46 nm. Moreover, the SEM and AFM observations indicated a noticeable magnetic field effect on the surface morphology. The optical band gap deduced from the transmittance data is around 3.4 eV. The magneto-optical measurements indicated very interesting spontaneous Faraday rotation of \(4628^{\circ}/\text{c}\text{m}\). The successful elaboration of partially hard magnetic cobalt ferrite thin films offers a new route for high potential exploitation of the spontaneous Faraday rotation effect, which is necessary to develop advanced and miniaturized non-reciprocal optical devices.
Vorheriger Artikel Hybrid materials of carbon nanotubes with fluoroalkyl- and alkyl-substituted zinc phthalocyanines
Nächster Artikel On the formation of cellulose-based carbon microspheres with Fe2O3 nanoparticle cores

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Metadaten
Titel
Spontaneous Faraday rotation of thin films electrodeposited under a static magnetic field
verfasst von
N. Labchir
A. Hannour
A. Ait hssi
D. Vincent
D. Jamon
J. Y. Michalon
A. Ihlal
M. Sajieddine
Publikationsdatum
25.05.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 14/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03652-9

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