Ausgabe 1/2014
Special Issue on Process Modeling
Inhalt (35 Artikel)
Challenges and opportunities for process modeling in the nanotechnology era
J. K. Lorenz, E. Baer, A. Burenkov, A. Erdmann, P. Evanschitzky, P. Pichler
Process modeling for advanced device technologies
S. M. Cea, S. Botelho, A. Chaudhry, P. Fleischmann, M. D. Giles, A. Grigoriev, A. Kaushik, P. H. Keys, H. W. Kennel, A. D. Lilak, R. Mehandru, M. Stettler, B. Voinov, N. Voynich, C. Weber, N. Zhavoronok
Modeling of junction formation in scaled Si devices
Taiji Noda, Christa Vrancken, Wilfried Vandervorst
Modeling of defects, dopant diffusion and clustering in silicon
Maria Aboy, I. Santos, L. Pelaz, L. A. Marqués, P. López
Process modeling of stress and chemical effects in SiGe alloys using kinetic Monte Carlo
Nikolas Zographos, Ignacio Martin-Bragado
Process modeling for doped regions formation on high efficiency crystalline silicon solar cells
Antonios Florakis, Tom Janssens, Jef Poortmans, Wilfried Vandervorst
Analysis and design of digital predictive controller for PFC Cuk converter
M. G. Umamaheswari, G. Uma, L. Annie Isabella
Performance evaluation of a lateral trench-gate power MOSFET on InGaAs
Yashvir Singh, Manoj Singh Adhikari
Computational models for investigation of channel amplifier’s optimal parameters
Alla Shymanska, Vitali Babakov
A new source heterojunction strained channel structure for ballistic gate all around nanowire transistor
Reza Hosseini, Neda Teimourzadeh, Morteza Fathipour
Carrier scattering and impact ionization in bilayer graphene
M. Saeidmanesh, M. H. Ghadiry, M. Khaledian, M. J. Kiani, Razali Ismail
Transport study of gate and channel engineering on the surrounding-gate CNTFETs based on NEGF quantum theory
Wei Wang, Xiao Yang, Na Li, Guangran Xiao, Sitao Jiang, Chunping Xia, Yan Wang
A novel QCA implementation of MUX-based universal shift register
Reza Sabbaghi-Nadooshan, Moein Kianpour
Miniaturized modified circular patch monopole antenna on ceramic-polytetrafluroethylene composite material substrate
Mohammad Habib Ullah, Mohammad Tariqul Islam
Underlying design advantages for GaN MOSFETs compared with GaN HFETs for power applications
Kyle M. Bothe, Douglas W. Barlage
Dual material gate junctionless tunnel field effect transistor
Punyasloka Bal, Bahniman Ghosh, Partha Mondal, M. W. Akram, Ball Mukund Mani Tripathi
A conservative finite difference scheme for Poisson–Nernst–Planck equations
Allen Flavell, Michael Machen, Bob Eisenberg, Julienne Kabre, Chun Liu, Xiaofan Li
Bias and geometry optimization of FinFET for RF stability performance
K. Sivasankaran, P. S. Mallick
Monte Carlo simulation of diffusive-to-ballistic transition in phonon transport
Kentaro Kukita, Indra Nur Adisusilo, Yoshinari Kamakura
Current and voltage based bit errors and their combined mitigation for the Kirchhoff-law–Johnson-noise secure key exchange
Yessica Saez, Laszlo B. Kish, Robert Mingesz, Zoltan Gingl, Claes G. Granqvist
A theoretical study of all optical clocked D flip flop using single micro-ring resonator
Jayanta Kumar Rakshit, Jitendra Nath Roy, Tanay Chattopadhyay
Discrete geometric approach for modelling quantization effects in nanoscale electron devices
Alan Paussa, Ruben Specogna, David Esseni, Francesco Trevisan
Signal integrity and propagation delay analysis using FDTD technique for VLSI interconnects
Devendra Kumar Sharma, Brajesh Kumar Kaushik, R. K. Sharma
The impact of high-k gate dielectric and FIBL on performance of nano DG-MOSFETs with underlapped source/drain regions
Morteza Charmi, Hamid R. Mashayekhi, Ali A. Orouji
Numerical study of the effect of defect layer on unmagnetized plasma photonic crystals
Tony W. H. Sheu, R. Y. Chang, Y. W. Chang, J. H. Li
Geometrical and physical optimization of a photovoltaic cell by means of a genetic algorithm
Giuseppe Alì, Francesco Butera, Nella Rotundo