Ausgabe 2/2018
Inhalt (41 Artikel)
Tuning electronic, magnetic, and transport properties of blue phosphorene by substitutional doping: a first-principles study
Fatemeh Safari, Morteza Fathipour, Arash Yazdanpanah Goharrizi
On the electronic and transport properties of semiconducting carbon nanotubes: the role of -defects
D. Teich, M. Claus, G. Seifert
Graphene nanoribbon photodetectors based on an asymmetric potential barrier: a new concept and a new structure
Mohammad H. Zarei, Mohammad J. Sharifi
FDTD algorithm to achieve absolute stability in performance analysis of SWCNT interconnects
C. Venkataiah, K. Satyaprasad, T. Jayachandra Prasad
Effects of impurity and cross-sectional shape on entropy of quantum wires
R. Khordad, H. R. Rastegar Sedehi, H. Bahramiyan
Modeling and simulation of a graphene-based three-terminal junction rectifier
Ankur Garg, Neelu Jain, Arun Kumar Singh
A fast method for process reliability analysis of CNFET-based digital integrated circuits
Fereshteh Saeedi, Behnam Ghavami, Mohsen Raji
First-principles study of electron transport in azulene molecular junction: effect of electrode material on electrical rectification behavior
C. Preferencial Kala, D. John Thiruvadigal
Electronic signature of single-molecular device based on polyacetylene derivative
Alexandre de S. Oliveira, Antonio T. M. Beirão, Shirsley S. da Silva, Jordan Del Nero
Time evolution of current density in conducting single-walled carbon nanotubes
M. J. Majid, M. H. Alaa
Spin-dependent transport in a multifunctional spintronic device with graphene nanoribbon electrodes
Xiaoxiao Han, Jingjuan Yang, Peipei Yuan, Baoan Bian, Haifeng Shi, Yuqiang Ding
The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristics
Fa. Karimi, Ali A. Orouji
Design and structural optimization of junctionless FinFET with Gaussian-doped channel
Shalu Kaundal, Ashwani K. Rana
Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations
Jianmei Lei, Shengdong Hu, Dong Yang, Ye Huang, Qi Yuan, Jingwei Guo, Linghui Zeng, Siqi Wang, Xuan Yang
An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTs
M. N. Khan, U. F. Ahmed, M. M. Ahmed, S. Rehman
GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work function
Ibrahim Mustafa Mehedi, Abdulaziz M. Alshareef, Md. Rafiqul Islam, Md. Tanvir Hasan
Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with junction
Zeinab Ramezani, Ali A. Orouji
Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)
A. Khadir, N. Sengouga, A. Kouzou, M. K. Abdelhafidi
Application of the generalized logistic functions in modeling inversion charge density of MOSFET
Tijana Kevkić, Vladica Stojanović, Dušan Joksimović
A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injector
Wensuo Chen, Ruijin Liao, Zheng Zeng, Peijian Zhang
Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)
Ajay, Rakhi Narang, Manoj Saxena, Mridula Gupta
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluation
Nidhal Abdelmalek, Fayçal Djeffal, Toufik Bentrcia
Improvement in electrostatic characteristics of doped TFETs by hole layer formation
Deepak Soni, Dheeraj Sharma, Mohd. Aslam, Shivendra Yadav
Impact of asymmetric dual-k spacers on tunnel field effect transistors
Mohd Adil Raushan, Naushad Alam, Mohd Waseem Akram, Mohd Jawaid Siddiqui
Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage region
Pramod Kumar Patel, M. M. Malik, Tarun K. Gupta
On the optoelectronic properties of non-covalently functionalized graphene for solar cell application
Rihab Chouk, Manel Bergaoui, Mohamed Khalfaoui
Estimating various losses in c-Si solar cells subjected to partial shading: insights into J–V performance reduction
Zeel Purohit, Harsh Chaliyawala, Manoj Kumar, Brijesh Tripathi
Synthesis, computational study and characterization of a 3-{[2,3-diphenylquinoxalin-6-yl]diazenyl}-4-hydroxy-2H-chromen-2- one azo dye for dye-sensitized solar cell applications
Ramshah Ahmad Toor, Muhammad Hassan Sayyad, Syed Afaq Ali Shah, Nazia Nasr, Fatima Ijaz, Munawar Ali Munawar
Design of a high bitrate optical decoder based on photonic crystals
Fariborz Parandin, M. Mehdi Karkhanehchi, Mosayeb Naseri, Abdulhamid Zahedi
Design and performance analysis of all-optical cascaded adder using SOA-based MZI
Manohari Ramachandran, Shanthi Prince, Deepika Verma
Analytical predictions for nonlinear optical processes in silicon slot waveguides
Vishnu Priye, Nishit Malviya, Alan Mickelson
A novel three-input approximate XOR gate design based on quantum-dot cellular automata
Negin Maroufi, Davoud Bahrepour
Correction to: From materials to systems: a multiscale analysis of nanomagnetic switching
Yunkun Xie, Jianhua Ma, Samiran Ganguly, Avik W. Ghosh