Ausgabe 4/2017
Special Focus Topic Issue on Computational Electronics of Emerging Memory Elements
Inhalt (22 Artikel)
Introduction to the special focus topic issue on computational electronics of emerging memory elements
Blanka Magyari-Köpe, Derek Stewart
Grüneisen parameters and thermal conductivity in the phase change compound GeTe
Emanuele Bosoni, Gabriele Cesare Sosso, Marco Bernasconi
Ab initio calculation of thermal boundary resistance at the interface of metals with GeTe, InSbTe and InGeTe phase change compounds
S. Gabardi, D. Campi, M. Bernasconi
Kinetic and thermodynamic heterogeneity: an intrinsic source of variability in Cu-based RRAM memories
Sergiu Clima, Attilio Belmonte, Robin Degraeve, Andrea Fantini, Ludovic Goux, Bogdan Govoreanu, Malgorzata Jurczak, Kensuke Ota, Augusto Redolfi, Gouri Sankar Kar, Geoffrey Pourtois
Comprehensive modeling of electrochemical metallization memory cells
Stephan Menzel
General considerations and implications of isolated oxygen vacancies in oxide-based filamentary ReRAM devices
Sebastian Wicklein
Theoretical insights and experimental characterization of -based OxRRAMs operation
B. Traore, P. Blaise, E. Vianello, B. Sklénard
Filament-to-dielectric band alignments in and resistive RAMs
Ze-Han Wu, Kan-Hao Xue, Xiang-Shui Miao
Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices
Xiaoliang Zhong, Ivan Rungger, Peter Zapol, Olle Heinonen
Multiscale modeling of oxide RRAM devices for memory applications: from material properties to device performance
Luca Larcher, Andrea Padovani
Toward reliable RRAM performance: macro- and micro-analysis of operation processes
Gennadi Bersuker, Dmitry Veksler, David M. Nminibapiel, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Maribeth S. Mason, Kin P. Cheung
: a physical model for RRAM devices simulation
Marco A. Villena, Juan B. Roldán, Francisco Jiménez-Molinos, Enrique Miranda, Jordi Suñé, Mario Lanza
Physics-based modeling approaches of resistive switching devices for memory and in-memory computing applications
D. Ielmini, V. Milo
Piecewise empirical model (PEM) of resistive memory for pulsed analog and neuromorphic applications
John Niroula, Sapan Agarwal, Robin Jacobs-Gedrim, Richard L. Schiek, David Hughart, Alex Hsia, Conrad D. James, Matthew J. Marinella
Stochastic circuit breaker network model for bipolar resistance switching memories
S. Brivio, S. Spiga
Cross-point memory design challenges and survey of selector device characteristics
Xiaochen Peng, Ryan Madler, Pai-Yu Chen, Shimeng Yu
Design rules for threshold switches based on a field triggered thermal runaway mechanism
Carsten Funck, Susanne Hoffmann-Eifert, Sebastian Lukas, Rainer Waser, Stephan Menzel
Memory selector devices and crossbar array design: a modeling-based assessment
An Chen
From materials to systems: a multiscale analysis of nanomagnetic switching
Yunkun Xie, Jianhua Ma, Samiran Ganguly, Avik W. Ghosh
Prediction of new metastable phases: toward understanding ferro- and antiferroelectric films
S. V. Barabash
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
Milan Pešić, Christopher Künneth, Michael Hoffmann, Halid Mulaosmanovic, Stefan Müller, Evelyn T. Breyer, Uwe Schroeder, Alfred Kersch, Thomas Mikolajick, Stefan Slesazeck
Review of physics-based compact models for emerging nonvolatile memories
Nuo Xu, Pai-Yu Chen, Jing Wang, Woosung Choi, Keun-Ho Lee, Eun Seung Jung, Shimeng Yu