Ausgabe 9/2016
2015 U.S. Workshop on the Physics and Chemistry of II-VI Materials. Guest Editors: S. Sivananthan and N.K. Dhar
Inhalt (33 Artikel)
Macro-loading Effects in Inductively Coupled Plasma Etched Mercury Cadmium Telluride
Palash Apte, Kimon Rybnicek, Andrew Stoltz
Analysis of Etched CdZnTe Substrates
J. D. Benson, L. O. Bubulac, M. Jaime-Vasquez, C. M. Lennon, J. M. Arias, P. J. Smith, R. N. Jacobs, J. K. Markunas, L. A. Almeida, A. Stoltz, P. S. Wijewarnasuriya, J. Peterson, M. Reddy, K. Jones, S. M. Johnson, D. D. Lofgreen
Nondestructive Characterization of Residual Threading Dislocation Density in HgCdTe Layers Grown on CdZnTe by Liquid-Phase Epitaxy
Y. Fourreau, K. Pantzas, G. Patriarche, V. Destefanis
Comparing FDTD and Ray-Tracing Models in Numerical Simulation of HgCdTe LWIR Photodetectors
Marco Vallone, Michele Goano, Francesco Bertazzi, Giovanni Ghione, Wilhelm Schirmacher, Stefan Hanna, Heinrich Figgemeier
HgCdTe Detectors for Space and Science Imaging: General Issues and Latest Achievements
O. Gravrand, J. Rothman, C. Cervera, N. Baier, C. Lobre, J. P. Zanatta, O. Boulade, V. Moreau, B. Fieque
MCT-Based LWIR and VLWIR 2D Focal Plane Detector Arrays for Low Dark Current Applications at AIM
S. Hanna, D. Eich, K.-M. Mahlein, W. Fick, W. Schirmacher, R. Thöt, J. Wendler, H. Figgemeier
Joint FDTD-Optical/FEM-Electrical Numerical Simulation of Reflection-Type Subwavelength-Microstructure InSb Infrared Focal-Plane Arrays
J. L. He, W. D. Hu, Z. H. Ye, Y. Q. Lv, X. S. Chen, W. Lu
Mid-Wave HgCdTe FPA Based on P on N Technology: HOT Recent Developments. NETD: Dark Current and 1/f Noise Considerations
A. Kerlain, A. Brunner, D. Sam-Giao, N. Pére-Laperne, L. Rubaldo, V. Destefanis, F. Rochette, C. Cervera
Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology
M. Kopytko, K. Jóźwikowski, P. Martyniuk, W. Gawron, P. Madejczyk, A. Kowalewski, O. Markowska, A. Rogalski, J. Rutkowski
Hybrid Hamiltonian and Green's Function Approach for Studying Native Point Defect Levels in Semiconductor Compounds and Superlattices
Srini Krishnamurthy, Derek Van Orden, Zhi-Gang Yu
High-Operating Temperature HgCdTe: A Vision for the Near Future
D. Lee, M. Carmody, E. Piquette, P. Dreiske, A. Chen, A. Yulius, D. Edwall, S. Bhargava, M. Zandian, W. E. Tennant
Investigation of Substrate Effects on Interface Strain and Defect Generation in MBE-Grown HgCdTe
R. Gu, W. Lei, J. Antoszewski, L. Faraone
Multispectral Detection with Metal-Dielectric Filters: An Investigation in Several Wavelength Bands with Temporal Coupled-Mode Theory
Emeline Lesmanne, Roch Espiau de Lamaestre, Salim Boutami, Cédric Durantin, Laurent Dussopt, Giacomo Badano
Estimation of Thickness and Cadmium Composition Distributions in HgCdTe Focal Plane Arrays
S. Mouzali, S. Lefebvre, S. Rommeluère, Y. Ferrec, J. Primot
Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates
J. H. Park, J. Pepping, A. Mukhortova, S. Ketharanathan, R. Kodama, J. Zhao, D. Hansel, S. Velicu, F. Aqariden
Band Offsets of III–V and II–VI Materials Studied by Temperature-Dependent Internal Photoemission Spectroscopy
A. G. U. Perera, Y. F. Lao, P. S. Wijewarnasuriya, S. S. Krishna
A Failure Mode in Dense Infrared Detector Arrays Resulting in Increased Dark Current
Benjamin Pinkie, Enrico Bellotti
Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation
H. Qiao, W. D. Hu, T. Li, X. Y. Li, Y. Chang
Analysis of III–V Superlattice nBn Device Characteristics
David R. Rhiger, Edward P. Smith, Borys P. Kolasa, Jin K. Kim, John F. Klem, Samuel D. Hawkins
Numerical Device Modeling, Analysis, and Optimization of Extended-SWIR HgCdTe Infrared Detectors
J. Schuster, R. E. DeWames, E. A. DeCuir Jr., E. Bellotti, N. Dhar, P. S. Wijewarnasuriya
Surface Leakage Mechanisms in III–V Infrared Barrier Detectors
D. E. Sidor, G. R. Savich, G. W. Wicks
Dislocation Reduction in HgCdTe Mesa Structures Formed on CdTe/Si
Sina Simingalam, James Pattison, Yuanping Chen, Priyalal Wijewarnasuriya, Mulpuri V. Rao
Effect of Lattice Mismatch on HgCdTe LPE Film Surface Morphology
Quanzhi Sun, Yanfeng Wei, Juan Zhang, Ruiyun Sun
High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector
David Z. Ting, Alexander Soibel, Linda Höglund, Cory J. Hill, Sam A. Keo, Anita Fisher, Sarath D. Gunapala
Hole Transport in Arsenic-Doped Hg1−x Cd x Te with x ≥ 0.5
G. A. Umana-Membreno, H. Kala, S. Bains, N. D. Akhavan, J. Antoszewski, C. D. Maxey, L. Faraone
Dry etched SiO2 Mask for HgCdTe Etching Process
Y. Y. Chen, Z. H. Ye, C. H. Sun, L. G. Deng, S. Zhang, W. Xing, X. N. Hu, R. J. Ding, L. He
Dark Current Characterization of SW HgCdTe IRFPAs Detectors on Si Substrate with Long Time Integration
P. Y. Song, Z. H. Ye, A. B. Huang, H. L. Chen, X. N. Hu, R. J. Ding, L. He
Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors
Peng Zhang, Zhen-Hua Ye, Chang-Hong Sun, Yi-Yu Chen, Tian-Ning Zhang, Xin Chen, Chun Lin, Ring-Jun Ding, Li He