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Journal of Materials Science: Materials in Electronics

Ausgabe 9/2002

Inhalt (9 Artikel)

Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit

S. Thomas, S. White, P. R. Chalker, T. J. Bullough, T. B. Joyce

The growth of thin films of copper chalcogenide films by MOCVD and AACVD using novel single-molecule precursors

M. Kemmler, M. Lazell, P. O'Brien, D. J. Otway, Jin-Ho Park, J. R. Walsh

Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular beam epitaxy

N. Xiang, A. Tukiainen, M. Pessa, J. Dekker, J. Likonen

Synthesis and investigations of rutile phase nanoparticles of TiO2

Pramod H. Borse, Laxman S. Kankate, F. Dassenoy, W. Vogel, J. Urban, Sulabha K. Kulkarni

Preparation, characterization and CO sensing of Au/iron oxide thin films

G. Neri, A. Bonavita, S. Galvagno, C. Pace, N. Donato

Influence of the rare-earths oxides doped on the SnO2CoOMnO2Ta2O5 varistor system

A. Dibb, S. M. Tebcherani, W. Lacerda, M. Cilense, J. A. Varela, E. Longo

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