Ausgabe 12/2016
Inhalt (27 Artikel)
Resonant features of the terahertz generation in semiconductor nanowires
V. N. Trukhin, A. D. Bouravleuv, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morosov, J. P. Kakko, T. Huhtio, H. Lipsanen
On a new method of heterojunction formation in III–V nanowires
N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii
Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron
E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishchev, D. E. Batler
Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemliakov, V. I. Egorkin, A. V. Nezhenzev, A. V. Saharov, A. F. Zazul’nokov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev
Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account
E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky, V. A. Kozlov
Strained multilayer structures with pseudomorphic GeSiSn layers
V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vihrova, A. I. Morozov
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin
Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection
G. E. Fedorov, T. S. Stepanova, A. Sh. Gazaliev, I. A. Gaiduchenko, N. S. Kaurova, B. M. Voronov, G. N. Goltzman
On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells
A. N. Yablonsky, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov, M. V. Shaleev
Polariton condensate coherence in planar microcavities in a magnetic field
A. V. Chernenko, A. Rahimi-lman, J. Fischer, M. Amthor, C. Schneider, S. Reitzenstein, A. Forchel, S. Hoefling
Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface
M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov
Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
I. V. Shtrom, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen
Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates
P. A. Yunin, Yu. N. Drozdov, V. V. Chernov, V. A. Isaev, S. A. Bogdanov, A. B. Muchnikov
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretsky, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev
Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures
A. V. Novikov, M. V. Shaleev, D. V. Yurasov, P. A. Yunin
PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity
D. V. Ishchenko, A. E. Klimov, V. N. Shumsky, V. S. Epov
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures
S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. Vinichenko
Polarization of the photoluminescence of quantum dots incorporated into quantum wires
A. V. Platonov, V. P. Kochereshko, V. N. Kats, G. E. Cirlin, A. D. Bouravleuv, D. V. Avdoshina, A. Delga, L. Besombes, H. Mariette
Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells
V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe
Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasilnik
Mercury vacancies as divalent acceptors in Hg y Te1 – y /Cd x Hg1 – x Te structures with quantum wells
D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, F. Teppe
Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm
K. V. Maremyanin, V. V. Rumyantsev, A. V. Ikonnikov, L. S. Bovkun, E. G. Chizhevskii, I. I. Zasavitskii, V. I. Gavrilenko
Polarization of the induced THz emission of donors in silicon
K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H. -W. Hübers, N. V. Abrosimov, V. N. Shastin
Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation
A. S. Puzanov, S. V. Obolenskiy, V. A. Kozlov
Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm
A. N. Akimov, A. E. Klimov, S. V. Morozov, S. P. Suprun, V. S. Epov, A. V. Ikonnikov, M. A. Fadeev, V. V. Rumyantsev
The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells
V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil’nik, D. I. Kryzhkov