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Zeitschrift

Semiconductors

Semiconductors 12/2016

Ausgabe 12/2016

Inhaltsverzeichnis ( 27 Artikel )

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Resonant features of the terahertz generation in semiconductor nanowires

V. N. Trukhin, A. D. Bouravleuv, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morosov, J. P. Kakko, T. Huhtio, H. Lipsanen

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

On a new method of heterojunction formation in III–V nanowires

N. V. Sibirev, A. A. Koryakin, V. G. Dubrovskii

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

E. A. Surovegina, E. V. Demidov, M. N. Drozdov, A. V. Murel, O. I. Khrykin, V. I. Shashkin, M. A. Lobaev, A. M. Gorbachev, A. L. Viharev, S. A. Bogdanov, V. A. Isaev, A. B. Muchnikov, V. V. Chernov, D. B. Radishchev, D. E. Batler

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemliakov, V. I. Egorkin, A. V. Nezhenzev, A. V. Saharov, A. F. Zazul’nokov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Microwave-signal generation in a planar Gunn diode with radiation exposure taken into account

E. S. Obolenskaya, E. A. Tarasova, A. Yu. Churin, S. V. Obolensky, V. A. Kozlov

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Strained multilayer structures with pseudomorphic GeSiSn layers

V. A. Timofeev, A. I. Nikiforov, A. R. Tuktamyshev, M. Yu. Yesin, V. I. Mashanov, A. K. Gutakovskii, N. A. Baidakova

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vihrova, A. I. Morozov

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection

G. E. Fedorov, T. S. Stepanova, A. Sh. Gazaliev, I. A. Gaiduchenko, N. S. Kaurova, B. M. Voronov, G. N. Goltzman

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

A. N. Yablonsky, R. Kh. Zhukavin, N. A. Bekin, A. V. Novikov, D. V. Yurasov, M. V. Shaleev

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Polariton condensate coherence in planar microcavities in a magnetic field

A. V. Chernenko, A. Rahimi-lman, J. Fischer, M. Amthor, C. Schneider, S. Reitzenstein, A. Forchel, S. Hoefling

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface

M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Surface passivation of GaAs nanowires by the atomic layer deposition of AlN

I. V. Shtrom, A. D. Bouravleuv, Yu. B. Samsonenko, A. I. Khrebtov, I. P. Soshnikov, R. R. Reznik, G. E. Cirlin, V. Dhaka, A. Perros, H. Lipsanen

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Formation of singular (001) terraces on the surface of single-crystal HPHT diamond substrates

P. A. Yunin, Yu. N. Drozdov, V. V. Chernov, V. A. Isaev, S. A. Bogdanov, A. B. Muchnikov

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

V. S. Varavin, V. V. Vasilyev, A. A. Guzev, S. A. Dvoretsky, A. P. Kovchavtsev, D. V. Marin, I. V. Sabinina, Yu. G. Sidorov, G. Yu. Sidorov, A. V. Tsarenko, M. V. Yakushev

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

A. V. Novikov, M. V. Shaleev, D. V. Yurasov, P. A. Yunin

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

D. V. Ishchenko, A. E. Klimov, V. N. Shumsky, V. S. Epov

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. Vinichenko

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Polarization of the photoluminescence of quantum dots incorporated into quantum wires

A. V. Platonov, V. P. Kochereshko, V. N. Kats, G. E. Cirlin, A. D. Bouravleuv, D. V. Avdoshina, A. Delga, L. Besombes, H. Mariette

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Long-wavelength stimulated emission and carrier lifetimes in HgCdTe-based waveguide structures with quantum wells

V. V. Rumyantsev, M. A. Fadeev, S. V. Morozov, A. A. Dubinov, K. E. Kudryavtsev, A. M. Kadykov, I. V. Tuzov, S. A. Dvoretskii, N. N. Mikhailov, V. I. Gavrilenko, F. Teppe

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasilnik

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Mercury vacancies as divalent acceptors in Hg y Te1 – y /Cd x Hg1 – x Te structures with quantum wells

D. V. Kozlov, V. V. Rumyantsev, S. V. Morozov, A. M. Kadykov, M. A. Fadeev, V. S. Varavin, N. N. Mikhailov, S. A. Dvoretsky, V. I. Gavrilenko, F. Teppe

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Terahertz injection lasers based on PbSnSe alloy with an emission wavelength up to 46.5 μm

K. V. Maremyanin, V. V. Rumyantsev, A. V. Ikonnikov, L. S. Bovkun, E. G. Chizhevskii, I. I. Zasavitskii, V. I. Gavrilenko

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Polarization of the induced THz emission of donors in silicon

K. A. Kovalevsky, R. Kh. Zhukavin, V. V. Tsyplenkov, S. G. Pavlov, H. -W. Hübers, N. V. Abrosimov, V. N. Shastin

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

A. S. Puzanov, S. V. Obolenskiy, V. A. Kozlov

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

Giant negative photoconductivity of PbSnTe:In films with wavelength cutoff near 30 μm

A. N. Akimov, A. E. Klimov, S. V. Morozov, S. P. Suprun, V. S. Epov, A. V. Ikonnikov, M. A. Fadeev, V. V. Rumyantsev

01.12.2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Ausgabe 12/2016

The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells

V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil’nik, D. I. Kryzhkov

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