Ausgabe 2/1998
Inhalt (25 Artikel)
Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types
L. A. Kazakevich, P. F. Lugakov
Radiation defect formation in Ge-doped silicon as a result of low-temperature irradiation
L. I. Khirunenko, V. I. Shakhovtsov, V. V. Shumov
Diffusion doping of undoped hydrogenated amorphous silicon with tin
G. S. Kulikov, K. Kh. Khodzhaev
Ultrashallow p +-n junctions in silicon (100): Electron-beam diagnostics of the surface zone
A. N. Andronov, S. V. Robozerov, N. T. Bagraev, L. E. Klyachkin
Exciton characteristics of intercalated TlGaSe2 single crystal
S. N. Mustafaeva, E. M. Kerimova, N. Z. Gasanov
Deformation potentials of the Γ(000) band extrema in CdGa2S4
T. G. Kerimova, Sh. S. Mamedov, I. A. Mamedova
Optical spectra of microcrystals of the layered semiconductor PbI2 grown in glass matrices
A. S. Ablitsova, V. F. Agekyan, A. Yu. Serov
Excited states of chalcogen ions in germanium
A. Yu. Ushakov, R. M. Shterengas, L. M. Shterengas, N. B. Radchuk
Self-compensation in CdTe〈Cl〉 in the presence of phase equilibrium of the system crystal-cadmium (tellurium) vapor
O. A. Matveev, A. I. Terent’ev
Negative dynamic differential conductivity at the cyclotron frequency in Ga1−x AlxAs under conditions of ballistic intervalley electron transfer
G. É. Dzamukashvili, Z. S. Kachlishvili, N. K. Metreveli
The effect of copper doping of n-ZnSe crystals on the structure of luminescence centers of long-wavelength luminescence
G. N. Ivanova, V. A. Kasiyan, D. D. Nedeoglo, S. V. Oprya
The structure of high-temperature blue luminescence centers in zinc selenide and mechanisms of this luminescence
G. N. Ivanova, V. A. Kasiyan, N. D. Nedeoglo, D. D. Nedeoglo, A. V. Simashkevich
Effect of heteroepitaxial surface passivation on the photosensitivity spectra and recombination parameters of GaAs layers
I. A. Karpovich, M. V. Stepikhova
Transient current in amorphous, porous semiconductor-crystalline semiconductor structures
L. P. Kazakova, E. A. Lebedev
Current-voltage characteristics of Si:B blocked impurity-band structures under conditions of hopping-transport-limited photoresponse
B. A. Aronzon, D. Yu. Kovalev, A. M. Kozlov, J. Leotin, V. V. Ryl’kov
Ohmic contact formation during continuous heating of GaAs and GaP Shottky diodes
Yu. A. Goldberg, E. A. Posse
Relaxation of the electric field in high-resistivity, strongly biased MISIM structures with deep impurity levels
B. I. Reznikov
Photoelectrical memory in GaAs/AlGaAs multilayer quantum-well structures
V. N. Ovsyuk, M. A. Dem’yanenko, V. V. Shashkin, A. I. Toropov
Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs
T. I. Voronina, T. S. Lagunova, M. P. Mikhailova, K. D. Moiseev, A. E. Rosov, Yu. P. Yakovlev
Interband absorption of long-wavelength radiation in δ-doped superlattices based on single-crystal wide-gap semiconductors
V. V. Osipov, A. Yu. Selyakov, M. Foygel
Lateral traveling wave as a type of transient process in a resonant-tunneling structure
D. V. Mel’nikov, A. I. Podlivaev
The structure of porous gallium phosphide
T. N. Zavaritskaya, A. V. Kvit, N. N. Mel’nik, V. A. Karavanskii
InAsSbP double-heterostructure lasers for the spectral range 2.7–3.0 µm (T=77 K)
T. N. Danilova, A. P. Danilova, O. G. Ershov, A. N. Imenkov, M. V. Stepanov, V. V. Sherstnev, Yu. P. Yakovlev
Gamma-induced metastable states of doped, amorphous, hydrated silicon
M. S. Ablova, G. S. Kulikov, S. K. Persheev
Subthreshold characteristics of electrostatically controlled transistors and thyristors. 1. Shallow planar gate
A. S. Kyuregyan, S. N. Yurkov