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Zeitschrift

Semiconductors

Semiconductors 3/2011

Ausgabe 3/2011

Inhaltsverzeichnis ( 24 Artikel )

01.03.2011 | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Ausgabe 3/2011

Mechanisms of defect formation in ingots of 4H silicon carbide polytype

D. D. Avrov, A. V. Bulatov, S. I. Dorozhkin, A. O. Lebedev, Yu. M. Tairov, A. Yu. Fadeev

01.03.2011 | Electronic Properties of Semiconductors | Ausgabe 3/2011

The I–V characteristics of asymmetrically necked samples of high-resistivity silicon

S. Ašmontas, V. Kleiza

01.03.2011 | Electronic Properties of Semiconductors | Ausgabe 3/2011

Heating of charge carriers and rectification of current in asymmetrical p-n junction in a microwave field

M. G. Dadamirzayev

01.03.2011 | Electronic Properties of Semiconductors | Ausgabe 3/2011

Effect of temperature on electron spectra in the region of the intrinsic-absorption edge of CdGa2Se4

T. G. Kerimova, R. A. Guliyev

01.03.2011 | Spectroscopy, Interaction with Radiation | Ausgabe 3/2011

A model of nonlinear optical transmittance for insulator nanocomposites

V. P. Dzyuba, A. E. Krasnok, J. N. Kulchin, I. V. Dzyuba

01.03.2011 | Surfaces, Interfaces, and Thin Films | Ausgabe 3/2011

Specific features of amorphous silicon layers grown by plasma-enhanced chemical vapor deposition with tetrafluorosilane

J. S. Vainshtein, O. I. Kon’kov, A. V. Kukin, O. S. El’tsina, L. V. Belyakov, E. I. Terukov, O. M. Sreseli

01.03.2011 | Surfaces, Interfaces, and Thin Films | Ausgabe 3/2011

Raman scattering in self-formed nanoporous carbon produced on the basis of silicon carbide

M. E. Kompan, D. S. Krylov, V. V. Sokolov

01.03.2011 | Surfaces, Interfaces, and Thin Films | Ausgabe 3/2011

Mechanisms of current flow in Au-CdTe contacts with a modified surface

V. P. Machnij, N. J. Skrypnyk

01.03.2011 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 3/2011

Optical constants detection in tin dioxide nano-size layers by surface plasmon resonance investigation

B. K. Serdega, I. E. Matyash, L. S. Maximenko, S. P. Rudenko, V. A. Smyntyna, V. S. Grinevich, L. N. Filevskaya, B. Ulug, A. Ulug, B. M. Yücel

01.03.2011 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 3/2011

Photoreflectance spectroscopy of electron-hole states in a graded-width GaAs/InGaAs/GaAs quantum well

L. P. Avakyants, P. Yu. Bokov, E. V. Glazyrin, I. P. Kazakov, A. V. Chervyakov

01.03.2011 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 3/2011

Silicon-on-insulator structures with a nitrogenated buried SiO2 layer: Preparation and properties

I. E. Tyschenko, V. P. Popov

01.03.2011 | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Ausgabe 3/2011

Structure and properties of small clusters of transition 3d-element oxides

A. V. Popov

01.03.2011 | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Ausgabe 3/2011

Carrier transport in layered semiconductor (p-GaSe)-ferroelectric (KNO3) composite nanostructures

A. P. Bakhtinov, V. N. Vodopyanov, Z. D. Kovalyuk, V. V. Netyaga, D. Yu. Konoplyanko

01.03.2011 | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Ausgabe 3/2011

Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

A. V. Vasin, P. N. Okholin, I. N. Verovsky, A. N. Nazarov, V. S. Lysenko, K. I. Kholostov, V. P. Bondarenko, Y. Ishikawa

01.03.2011 | Physics of Semiconductor Devices | Ausgabe 3/2011

Analysis of spatial modes in half-disk lasers based on AlGaAsSb/InGaAsSb quantum well nanoheterostructures

A. N. Imenkov, V. V. Sherstnev, E. A. Grebenshchikova, M. A. Sipovskaya, M. I. Larchenkov, D. I. Tarasov, A. N. Baranov, Yu. P. Yakovlev

01.03.2011 | Physics of Semiconductor Devices | Ausgabe 3/2011

Edge inversion channels and surface leakage currents in high-voltage semiconductor devices

A. S. Kyuregyan

01.03.2011 | Physics of Semiconductor Devices | Ausgabe 3/2011

Laminated grid solar cells (LGCells) on multicrystalline silicon. Application of atomic hydrogen treatment

G. G. Untila, T. N. Kost, A. B. Chebotareva, M. E. Belousov, V. A. Samorodov, A. Yu. Poroykov, M. A. Timofeyev, M. B. Zaks, A. M. Sitnikov, O. I. Solodukha

01.03.2011 | Physics of Semiconductor Devices | Ausgabe 3/2011

Optimization of the configuration of a symmetric three-barrier resonant-tunneling structure as an active element of a quantum cascade detector

N. V. Tkach, Ju. A. Seti

01.03.2011 | Physics of Semiconductor Devices | Ausgabe 3/2011

HgCdTe heterostructures on Si (310) substrates for midinfrared focal plane arrays

M. V. Yakushev, D. V. Brunev, V. S. Varavin, V. V. Vasilyev, S. A. Dvoretskii, I. V. Marchishin, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, A. V. Sorochkin

01.03.2011 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 3/2011

Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond

A. A. Altukhov, A. L. Vikharev, A. M. Gorbachev, M. P. Dukhnovsky, V. E. Zemlyakov, K. N. Ziablyuk, A. V. Mitenkin, A. B. Muchnikov, D. B. Radishev, A. K. Ratnikova, Yu. Yu. Fedorov

01.03.2011 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 3/2011

The influence of hydrogenation on the electrical properties of the Cd x Hg1 − x Te epitaxial structures

V. S. Varavin, G. Yu. Sidorov, M. O. Garifullin, A. V. Vishnyakov, Yu. G. Sidorov

01.03.2011 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 3/2011

Investigation of the local density of states in self-assembled GeSi/Si(001) nanoislands by combined scanning tunneling and atomic-force microscopy

P. A. Borodin, A. A. Bukharaev, D. O. Filatov, M. A. Isakov, V. G. Shengurov, V. Yu. Chalkov, Yu. A. Denisov

01.03.2011 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 3/2011

The effect of composition on the formation of light-emitting Si nanostructures in SiO x layers on irradiation with swift heavy ions

G. A. Kachurin, S. G. Cherkova, D. V. Marin, V. G. Kesler, V. A. Skuratov, A. G. Cherkov

01.03.2011 | Fabrication, Treatment, and Testing of Materials and Structures | Ausgabe 3/2011

Effect of the silicon doping level and features of nanostructural arrangement on decrease in external quantum efficiency in InGaN/GaN light-emitting diodes with increasing current

B. Ya. Ber, E. V. Bogdanova, A. A. Greshnov, A. L. Zakgeim, D. Yu. Kazanzev, A. P. Kartashova, A. S. Pavluchenko, A. E. Chernyakov, E. I. Shabunina, N. M. Shmidt, E. B. Yakimov

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