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Zeitschrift

Semiconductors

Semiconductors 6/2015

Ausgabe 6/2015

Inhaltsverzeichnis ( 25 Artikel )

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Low-temperature conductivity of silicon doped with antimony

A. K. Fedotov, I. A. Svito, V. V. Fedotova, A. G. Trafimenko, A. L. Danilyuk, S. L. Prischepa

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Interstitial carbon formation in irradiated copper-doped silicon

N. A. Yarykin, J. Weber

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Effect of copper on the recombination activity of extended defects in silicon

O. V. Feklisova, E. B. Yakimov

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

EBIC and LBIC studies of the properties of extended defects in plastically deformed silicon

V. I. Orlov, O. V. Feklisova, E. B. Yakimov

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Recombination activity of interfaces in multicrystalline silicon

S. M. Peshcherova, E. B. Yakimov, A. I. Nepomnyashchikh, L. A. Pavlova, O. V. Feklisova

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Pulsed modification of germanium films on silicon, sapphire, and quartz substrates: Structure and optical properties

H. A. Novikov, R. I. Batalov, R. M. Bayazitov, I. A. Faizrakhmanov, N. M. Lyadov, V. A. Shustov, K. N. Galkin, N. G. Galkin, I. M. Chernev, G. D. Ivlev, S. L. Prokop’ev, P. I. Gaiduk

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Aluminoborosilicate glasses codoped with rare-earth elements as radiation-protective covers for solar cells

E. V. Malchukova, A. S. Abramov, A. I. Nepomnyashchikh, E. I. Terukov

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents

Ya. L. Shabelnikova, E. B. Yakimov, D. P. Nikolaev, M. V. Chukalina

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Study of the properties of silicon-based semiconductor converters for betavoltaic cells

M. A. Polikarpov, E. B. Yakimov

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Linear chains of Ge/Si quantum dots grown on a prepatterned surface formed by ion irradiation

Zh. V. Smagina, A. V. Dvurechenskii, V. A. Seleznev, P. A. Kuchinskaya, V. A. Armbrister, V. A. Zinovyev, N. P. Stepina, A. F. Zinovieva, A. V. Nenashev, A. K. Gutakovskii

01.06.2015 | Proceedings of the Conference “Silicon-2014”, Irkutsk, July 7–12, 2014 | Ausgabe 6/2015

Si(hhm) surfaces: Templates for developing nanostructures

S. I. Bozhko, A. M. Ionov, A. N. Chaika

01.06.2015 | Electronic Properties of Semiconductors | Ausgabe 6/2015

Specific features of Hall measurements in doped semiconductors

V. F. Bannaya

01.06.2015 | Electronic Properties of Semiconductors | Ausgabe 6/2015

On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

V. M. Boiko, V. N. Brudnii, V. S. Ermakov, N. G. Kolin, A. V. Korulin

01.06.2015 | Electronic Properties of Semiconductors | Ausgabe 6/2015

The Shubnikov-de Haas effect and thermoelectric properties of Tl-doped Sb2Te3 and Bi2Se3

V. A. Kulbachinskii, A. A. Kudryashov, V. G. Kytin

01.06.2015 | Spectroscopy, Interaction with Radiation | Ausgabe 6/2015

On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

O. V. Aleksandrov

01.06.2015 | Surfaces, Interfaces, and Thin Films | Ausgabe 6/2015

Influence of substrate temperature on structural and optical properties of RF sputtered ZnMnO thin films

Parisa Pashaei, Nihan Akin, U. Ceren Baskose, M. Kemal Ozturk, Mehmet Cakmak, Suleyman Ozcelik

01.06.2015 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 6/2015

Diagnostics of the efficiency of surface plasmon-polariton excitation by quantum dots via polarization measurements of the output radiation

V. A. Kukushkin, N. V. Baidus, A. V. Zdoroveishchev

01.06.2015 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 6/2015

Edge effects in second-harmonic generation in nanoscale layers of transition-metal dichalcogenides

E. D. Mishina, N. E. Sherstyuk, A. P. Shestakova, S. D. Lavrov, S. V. Semin, A. S. Sigov, A. Mitioglu, S. Anghel, L. Kulyuk

01.06.2015 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 6/2015

Holes localized in nanostructures in an external magnetic field: g-factor and mixing of states

M. A. Semina, R. A. Suris

01.06.2015 | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Ausgabe 6/2015

Wannier-Mott excitons in semiconductors with a superlattice

R. A. Suris

01.06.2015 | Carbon Systems | Ausgabe 6/2015

Application of the wavelet transform to the problem of the detection and determination of the Lorentzian positions of the 2D band in the Raman spectrum of bilayer graphene

T. E. Timofeeva, S. A. Smagulova, V. I. Popov

01.06.2015 | Physics of Semiconductor Devices | Ausgabe 6/2015

On the tensosensitivity of a p-n junction under illumination

G. Gulyamov, A. G. Gulyamov

01.06.2015 | Physics of Semiconductor Devices | Ausgabe 6/2015

High-efficiency plasma treatment for surface modification of LPCVD ZnO

D. Andronikov, A. Abramov, E. Terukov, A. Vinogradov, A. Ankudinov, V. Afanasjev

01.06.2015 | Physics of Semiconductor Devices | Ausgabe 6/2015

Hopping transport in the space-charge region of p-n structures with InGaN/GaN QWs as a source of excess 1/f noise and efficiency droop in LEDs

N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. S. Kogotkov, Yu. T. Rebane, M. V. Virko, Y. G. Shreter

01.06.2015 | Physics of Semiconductor Devices | Ausgabe 6/2015

Effect of different loss mechanisms in SiGeSn based mid-infrared laser

Vedatrayee Chakraborty, Bratati Mukhopadhyay, P. K. Basu

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