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Zeitschrift

Semiconductors

Semiconductors 9/2018

Ausgabe 9/2018

Inhaltsverzeichnis ( 23 Artikel )

01.09.2018 | SPECTROSCOPY, INTERACTION WITH RADIATION | Ausgabe 9/2018

Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions

E. V. Okulich, V. I. Okulich, D. I. Tetelbaum

01.09.2018 | SPECTROSCOPY, INTERACTION WITH RADIATION | Ausgabe 9/2018

Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy–Oxygen Complexes in Irradiated Silicon Crystals

E. A. Tolkacheva, V. P. Markevich, L. I. Murin

01.09.2018 | SURFACES, INTERFACES, AND THIN FILMS | Ausgabe 9/2018

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals

R. K. Yafarov

01.09.2018 | SURFACES, INTERFACES, AND THIN FILMS | Ausgabe 9/2018

Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser

P. S. Shkumbatjuk

01.09.2018 | SURFACES, INTERFACES, AND THIN FILMS | Ausgabe 9/2018

Poole–Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide

A. A. Shiryaev, V. M. Vorotyntsev, E. L. Shobolov

01.09.2018 | SURFACES, INTERFACES, AND THIN FILMS | Ausgabe 9/2018

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

A. V. Sitnikov, O. V. Zhilova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. I. Remizova

01.09.2018 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 9/2018

Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles

E. Yu. Stovpiaga, D. A. Eurov, D. A. Kurdyukov, A. N. Smirnov, M. A. Yagovkina, D. R. Yakovlev, V. G. Golubev

01.09.2018 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 9/2018

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures

M. L. Orlov, N. S. Volkova, N. L. Ivina, L. K. Orlov

01.09.2018 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 9/2018

Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid

T. S. Kondratenko, M. S. Smirnov, O. V. Ovchinnikov, E. V. Shabunya-Klyachkovskaya, A. S. Matsukovich, A. I. Zvyagin, Y. A. Vinokur

01.09.2018 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 9/2018

Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization)

K. A. Ivanov, A. R. Gubaydullin, M. A. Kaliteevski

01.09.2018 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 9/2018

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface

Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskiy, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii

01.09.2018 | SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA | Ausgabe 9/2018

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures

E. S. Kolodeznyi, A. S. Kurochkin, S. S. Rochas, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinsky, A. V. Savelyev, A. Yu. Egorov, D. V. Denisov

01.09.2018 | AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS | Ausgabe 9/2018

Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System

R. A. Castro, G. I. Grabko, A. A. Kononov

01.09.2018 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS | Ausgabe 9/2018

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide

P. V. Seredin, A. S. Lenshin, A. V. Fedyukin, D. L. Goloshchapov, A. N. Lukin, I. N. Arsentyev, A. V. Zhabotinsky

01.09.2018 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS | Ausgabe 9/2018

Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions

I. G. Orletskyi, M. I. Ilashchuk, M. N. Solovan, P. D. Maryanchuk, O. A. Parfenyuk, E. V. Maistruk, S. V. Nichyi

01.09.2018 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS | Ausgabe 9/2018

On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films

V. A. Volodin, Zhang Rui, G. K. Krivyakin, A. Kh. Antonenko, M. Stoffel, H. Rinnert, M. Vergnat

01.09.2018 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS | Ausgabe 9/2018

Effect of Injection Depletion in p-Si–n-(Si2)1 –x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure

A. S. Saidov, A. Yu. Leyderman, Sh. N. Usmonov, K. A. Amonov

01.09.2018 | MICROCRYSTALLINE, NANOCRYSTALLINE, POROUS, AND COMPOSITE SEMICONDUCTORS | Ausgabe 9/2018

Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si

M. P. Teplyakov, O. S. Ken, D. N. Goryachev, O. M. Sreseli

01.09.2018 | CARBON SYSTEMS | Ausgabe 9/2018

Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide

E. V. Rut’kov, N. R. Gall

01.09.2018 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 9/2018

Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method

N. P. Klochko, V. R. Kopach, G. S. Khrypunov, V. E. Korsun, V. M. Lyubov, D. O. Zhadan, A. N. Otchenashko, M. V. Kirichenko, M. G. Khrypunov

01.09.2018 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 9/2018

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range

E. V. Kunitsyna, I. A. Andreev, G. G. Konovalov, E. V. Ivanov, A. A. Pivovarova, N. D. Il’inskaya, Yu. P. Yakovlev

01.09.2018 | PHYSICS OF SEMICONDUCTOR DEVICES | Ausgabe 9/2018

Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells

A. A. Dubinov, V. Ya. Aleshkin, S. V. Morozov

01.09.2018 | FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES | Ausgabe 9/2018

Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method

A. N. Anisimov, A. A. Wolfson, E. N. Mokhov

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