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Microsystem Technologies

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13.12.2017 | Technical Paper

Synthesis of ScAlN thin films on Si (100) substrates at room temperature

verfasst von: A. Pérez-Campos, M. Sinusía Lozano, F. Javier Garcia-Garcia, Z. Chen, G. F. Iriarte

Erschienen in: Microsystem Technologies | Ausgabe 6/2018

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Abstract

Scandium aluminum nitride alloy (ScAlN) thin films have been synthesized using reactive sputtering of a scandium aluminum alloy (Sc_0.40Al_0.60) target on Si (100) substrates. We have investigated the effects of two sputtering control factors, namely sputtering process pressure and discharge power, on the c-axis growth of the piezoelectric layers. According to our X-ray diffraction analysis, the films are highly textured in the [001] direction at low process pressures and moderate to high discharge powers. X-ray energy dispersive spectroscopy data reveal that the Sc content in the synthesized ScAlN thin films is proportional to the Sc content in Sc_0.40Al_0.60 alloy target. Finally, surface acoustic wave resonators have been manufactured to demonstrate the feasibility of this material for micro electro mechanical systems applications based on ScAlN/Si bilayer systems.

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Titel: Synthesis of ScAlN thin films on Si (100) substrates at room temperature
verfasst von: A. Pérez-Campos
M. Sinusía Lozano
F. Javier Garcia-Garcia
Z. Chen
G. F. Iriarte
Publikationsdatum: 13.12.2017
Verlag: Springer Berlin Heidelberg
Erschienen in: Microsystem Technologies / Ausgabe 6/2018
Print ISSN: 0946-7076
Elektronische ISSN: 1432-1858
DOI: https://doi.org/10.1007/s00542-017-3660-x

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