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2013 | OriginalPaper | Buchkapitel

5. SRAM Bitcell Design Using Unidirectional Devices

verfasst von : Jawar Singh, Saraju P. Mohanty, Dhiraj K. Pradhan

Erschienen in: Robust SRAM Designs and Analysis

Verlag: Springer New York

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Abstract

For ultra-low power applications, steep sub-threshold slope transistors are promising candidate to replace the traditional MOSFETs. The limitations of Inter-Band Tunnel Field Effect Transistors (TFETs) due to unidirectional current conduction behaviour have been explored in this chapter for successful realization of compact SRAM bitcell for ultra-low supply voltages. Since, asymmetric current conduction in TFETs limits the viability of realization of 6T SRAM bitcells. A case study of 6T SRAM bitcell design using Si-TFETs for reliable operation with low leakage at ultra low voltages is presented. It is also demonstrated that a functional 6T TFET SRAM design with comparable stability margins and faster performances at low voltages can be realized using unidirectional TFETs devices when compared with the 7T TFET SRAM bitcell.

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Titel: SRAM Bitcell Design Using Unidirectional Devices
verfasst von: Jawar Singh
Saraju P. Mohanty
Dhiraj K. Pradhan
Verlag: Springer New York
Buch: Robust SRAM Designs and Analysis
Print ISBN: 978-1-4614-0817-8

Electronic ISBN: 978-1-4614-0818-5

Copyright-Jahr: 2013
DOI: https://doi.org/10.1007/978-1-4614-0818-5_5

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