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Journal of Computational Electronics
Erschienen in: Journal of Computational Electronics 2/2020

06.03.2020

Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations

verfasst von: Alan C. J. Rossetto, Vinicius V. A. Camargo, Thiago H. Both, Dragica Vasileska, Gilson I. Wirth

Erschienen in: Journal of Computational Electronics | Ausgabe 2/2020

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Abstract

In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo device simulator, which is capable of accounting for the interplay between charge traps and the random dopant fluctuation effect. It was observed that the impact of a single charged trap on the transistor’s on-current is strongly dependent on the trap position along the channel length, on trap depth into the gate oxide, and on the trap position along the channel width. The current deviation estimated from statistical simulations is shown to be exponentially distributed, in agreement with experimental data from the literature. Results are also compared with uniform channel theory predictions.
Vorheriger Artikel Solis: a modular, portable, and high-performance 1D semiconductor device simulator
Nächster Artikel Controlling the ambipolar current in ultrathin SOI tunnel FETs using the back-bias effect

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Literatur
1.
Stolk, P.A., Widdershoven, F.P., Klaassen, D.B.M.: Modeling statistical dopant fluctuations in MOS transistors. IEEE Trans. Electron Device 45(9), 1960–1971 (1998)CrossRef
2.
Asenov, A.: Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFET’s: a 3-D “atomistic” simulation study. IEEE Trans. Electron Device 45(12), 2505–2513 (1998)CrossRef
3.
Mahmoodi, H., Mukhopadhyay, S., Roy, K.: Estimation of delay variations due to random-dopant fluctuations in nanoscale CMOS circuits. IEEE J. Solid-State Circuits 40(9), 1787–1796 (2005)CrossRef
4.
Tang, X., De, V.K., Meindl, J.D.: Intrinsic MOSFET parameter fluctuations due to random dopant placement. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 5(4), 369–376 (1997)CrossRef
5.
Asenov, A., Slavcheva, G., Brown, A.R., Davies, J.H., Saini, S.: Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study. IEEE Trans. Electron Device 48(4), 722–729 (2001)CrossRef
6.
Sonoda, K., Ishikawa, K., Eimori, T., Tsuchiya, O.: Discrete dopant effects on statistical variation of random telegraph signal magnitude. IEEE Trans. Electron Device 54(8), 1918–1925 (2007)CrossRef
7.
Grasser, T., Reisinger, H., Goes, W., Aichinger, T., Hehenberger, P., Wagner, P.J., Nelhiebel, M., Franco, J., Kaczer, B.: Switching oxide traps as the missing link between negative bias temperature instability and random telegraph noise. In: 2009 IEEE International Electron Devices Meeting, pp. 1–4 (2009)
8.
Grasser, T., Kaczer, B.: Evidence that two tightly coupled mechanisms are responsible for negative bias temperature instability in oxynitride MOSFETs. IEEE Trans. Electron Device 56(5), 1056–1062 (2009)CrossRef
9.
Schroder, D.K.: Negative bias temperature instability: what do we understand? Microelectron. Reliab. 47(6), 841–852 (2007)CrossRef
10.
Uren, M.J., Day, D.J., Kirton, M.J.: 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors. Appl. Phys. Lett. 47(11), 1195–1197 (1985)CrossRef
11.
Tega, N., Miki, H., Pagette, F., Frank, D.J., Ray, A., Rooks, M.J., Haensch, W., Torii, K.: Increasing threshold voltage variation due to random telegraph noise in FETs as gate lengths scale to 20 nm. In: 2009 symposium on VLSI technology, digital technology paper, pp. 50–51 (2009)
12.
Mueller, H.H., Schulz, M.: Random telegraph signal: an atomic probe of the local current in field-effect transistors. J. Appl. Phys. 83(3), 1734–1741 (1998)CrossRef
13.
Vandamme, L., Sodini, D., Gingl, Z.: On the anomalous behavior of the relative amplitude of RTS noise. Solid-State Electron. 42(6), 901–905 (1998)CrossRef
14.
Makarov, A., Kaczer, B., Chasin, A., Vandemaele, M., Bury, E., Jech, M., Grill, A., Hellings, G., El-Sayed, A.M., Grasser, T., et al.: Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach. IEEE Electron Device Lett. 40(10), 1579–1582 (2019)CrossRef
15.
Kaczer, B., Roussel, P.J., Grasser, T., Groeseneken, G.: Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices-application to NBTI. IEEE Electron Device Lett. 31(5), 411–413 (2010)CrossRef
16.
Wirth, G.I., da Silva, R., Kaczer, B.: Statistical model for MOSFET bias temperature instability component due to charge trapping. IEEE Trans. Electron Devices 58(8), 2743–2751 (2011)CrossRef
17.
Chen, W., Cai, L., Wang, K., Zhang, X., Liu, X., Du, G.: Statistical simulation of self-heating induced variability and reliability with application to nanosheet-FETs based SRAM. Microelectron. Reliab. 98, 63–68 (2019)CrossRef
18.
Hossain, A., Vasileska, D., Goodnick, S.M.: Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor. In: 11th IEEE International Conference on Nanotechnology, pp. 1110–1113 (2011)
19.
Wang, L., Brown, A.R., Nedjalkov, M., Alexander, C., Cheng, B., Millar, C., Asenov, A.: Impact of self-heating on the statistical variability in bulk and SOI FinFETs. IEEE Trans. Electron Devices 62(7), 2106–2112 (2015)CrossRef
20.
Franco, J., Kaczer, B., Toledano-Luque, M., Roussel, P.J., Hehenberger, P., Grasser, T., Mitard, J., Eneman, G., Witters, L., Hoffmann, T., Groeseneken, G.: On the impact of the Si passivation layer thickness on the NBTI of nanoscaled \(\text{ Si }_{0.45} \text{ Ge }_{0.55}\) pMOSFETs. Microelectron. Eng. 88(7), 1388–1391 (2011)CrossRef
21.
Weckx, P., Kaczer, B., Chen, C., Raghavan, P., Linten, D., Mocuta, A.: Relaxation of time-dependent NBTI variability and separation from RTN. In: 2017 IEEE International Reliability Physics Symposium Proceedings, pp. XT-9.1–XT-9.5 (2017)
22.
da Silva, M.B., Tuinhout, H., van Duijnhoven, A.Z., Wirth, G.I., Scholten, A.: A physics-based RTN variability model for MOSFETs. In: 2014 IEEE IEEE International Electron Devices Meeting, pp. 35.2.1–35.2.4 (2014)
23.
da Silva, M.B., Tuinhout, H.P., van Duijnhoven, A.Z., Wirth, G.I., Scholten, A.J.: A physics-based statistical RTN model for the low frequency noise in MOSFETs. IEEE Trans. Electron Devices 63(9), 3683–3692 (2016)CrossRef
24.
Alexander, C.L., Brown, A.R., Watling, J.R., Asenov, A.: Impact of single charge trapping in nano-MOSFETs-electrostatics versus transport effects. IEEE Trans. Nanotechnol. 4(3), 339–344 (2005)CrossRef
25.
26.
27.
Jacoboni, C., Reggiani, L.: The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials. Rev. Mod. Phys. 55, 645–705 (1983)CrossRef
28.
Gagliani, G., Reggiani, L.: Nonparabolicity and intrinsic carrier concentration in Si and Ge. Nuovo Cimento B 30(2), 207–216 (1975)CrossRef
29.
Dewey, J., Osman, M.A.: Monte Carlo study of hole transport in silicon. J. Appl. Phys. 74(5), 3219–3223 (1993)CrossRef
30.
van den Biesen, J.J.H.: A simple regional analysis of transit times in bipolar transistors. Solid-State Electron. 29(5), 529–534 (1986)CrossRef
31.
Gross, W.J., Vasileska, D., Ferry, D.K.: A novel approach for introducing the electron–electron and electron–impurity interactions in particle-based simulations. IEEE Electron Device Lett. 20(9), 463–465 (1999)CrossRef
32.
Gross, W.J., Vasileska, D., Ferry, D.K.: Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics. IEEE Trans. Electron Devices 47(10), 1831–1837 (2000)CrossRef
33.
Wordelman, C.J., Ravaioli, U.: Integration of a particle–particle–particle–mesh algorithm with the ensemble Monte Carlo method for the simulation of ultra-small semiconductor devices. IEEE Trans. Electron Devices 47(2), 410–416 (2000)CrossRef
34.
Lugli, P., Ferry, D.K.: Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors. IEEE Trans. Electron Devices 32(11), 2431–2437 (1985)CrossRef
35.
Kriman, A.M., Kann, M.J., Ferry, D.K., Joshi, R.: Role of the exchange interaction in the short-time relaxation of a high-density electron plasma. Phys. Rev. Lett. 65, 1619–1622 (1990)CrossRef
36.
Wong, H.S., White, M.H., Krutsick, T.J., Booth, R.V.: Modeling of transconductance degradation and extraction of threshold voltage in thin oxide MOSFET’s. Solid-State Electron. 30(9), 953–968 (1987)CrossRef
37.
dit Buisson, O.R., Ghibaudo, G., Brini, J.: Model for drain current RTS amplitude in small-area MOS transistors. Solid-State Electron. 35(9), 1273–1276 (1992)CrossRef
38.
Simoen, E., Dierickx, B., De Canne, B., Thoma, F., Claeys, C.: On the gate- and drain-voltage dependence of the RTS amplitude in submicron MOSTs. Appl. Phys. A 58(4), 353–358 (1994)CrossRef
39.
Reisinger, H.: The time-dependent defect spectroscopy. In: Grasser, T. (ed.) Bias Temperature Instability for Devices and Circuits, pp. 75–109. Springer, New York (2014)CrossRef
40.
Simoen, E., Dierickx, B., Claeys, C.L., Declerck, G.J.: Explaining the amplitude of RTS noise in submicrometer MOSFETs. IEEE Trans. Electron Devices 39(2), 422–429 (1992)CrossRef
41.
Amoroso, S.M., Gerrer, L., Markov, S., Adamu-Lema, F., Asenov, A.: Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D ‘atomistic’ simulation. In: Proceedings on European Solid-State Device Research Conference (ESSDERC), pp. 109–112 (2012)
42.
Amoroso, S.M., Gerrer, L., Markov, S., Adamu-Lema, F., Asenov, A.: RTN and BTI in nanoscale MOSFETs: a comprehensive statistical simulation study. Solid-State Electron. 84, 120–126 (2013)CrossRef
43.
Gerrer, L., Amoroso, S.M., Markov, S., Adamu-Lema, F., Asenov, A.: 3-D statistical simulation comparison of oxide reliability of planar MOSFETs and FinFET. IEEE Trans. Electron Devices 60(12), 4008–4013 (2013)CrossRef
44.
Jindal, R., van der Ziel, A.: Carrier fluctuation noise in a MOSFET channel due to traps in the oxide. Solid-State Electron. 21(6), 901–903 (1978)CrossRef
45.
Ghibaudo, G., Boutchacha, T.: Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectron. Reliab. 42(4), 573–582 (2002)CrossRef
46.
47.
Vasileska, D., Ahmed, S.S.: Narrow-width SOI devices: the role of quantum-mechanical size quantization effect and unintentional doping on the device operation. IEEE Trans. Electron Devices 52(2), 227–236 (2005)CrossRef
48.
Khan, H.R., Vasileska, D., Ahmed, S.S., Ringhofer, C., Heitzinger, C.: Modeling of FinFET: 3D MC simulation using FMM and unintentional doping effects on device operation. J. Comput. Electron. 3(3), 337–340 (2004)CrossRef
49.
Khan, H.R., Mamaluy, D., Vasileska, D.: Fully 3D self-consistent quantum transport simulation of double-gate and tri-gate 10 nm FinFETs. J. Comput. Electron. 7(3), 346–349 (2008)CrossRef
Metadaten
Titel
Statistical analysis of the impact of charge traps in p-type MOSFETs via particle-based Monte Carlo device simulations
verfasst von
Alan C. J. Rossetto
Vinicius V. A. Camargo
Thiago H. Both
Dragica Vasileska
Gilson I. Wirth
Publikationsdatum
06.03.2020
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 2/2020
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-020-01478-6

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