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Erschienen in:
Buchtitelbild

2016 | OriginalPaper | Buchkapitel

1. Steep Slope Devices and TFETs

verfasst von : Lining Zhang, Jun Huang, Mansun Chan

Erschienen in: Tunneling Field Effect Transistor Technology

Verlag: Springer International Publishing

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Abstract

Reducing energy dissipations per function with the integrated circuit (IC) chips is always an appealing research topic. Techniques in the fundamental electronic device levels are being pursued besides of those in the architecture level. In this chapter, we introduce several device candidates with a common feature of steep slope as possible solutions for lower power computations. The ever increasing power densities with the complementary metal-oxide-semiconductor (CMOS) technologies and the behind reasons are reviewed first. Implications are reached that a device with steep slopes beyond the Boltzmann limitations helps. Then, several devices realizing steep slopes beyond that of the MOS field-effect-transistor (FET) technology are introduced, including the impact ionization FETs, the electro-mechanical FETs, the piezoelectric transistor, the ferroelectric FETs, the feedback FETs, and the tunneling FETs (TFETs). Afterward, we analyze the key features of the basic TFET operations and characteristics in details. Finally, several widely studied performance boosters for the TFET technology are also reviewed from device structures to doping and material engineering.

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Nächstes Kapitel Tunneling FET Fabrication and Characterization
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Metadaten
Titel
Steep Slope Devices and TFETs
verfasst von
Lining Zhang
Jun Huang
Mansun Chan
Copyright-Jahr
2016
Buch
Tunneling Field Effect Transistor Technology

Print ISBN: 978-3-319-31651-2

Electronic ISBN: 978-3-319-31653-6

Copyright-Jahr: 2016

DOI
https://doi.org/10.1007/978-3-319-31653-6_1

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