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Erschienen in:
2007 | OriginalPaper | Buchkapitel
Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias
verfasst von : Chaffra A. Awo-Affouda, Max O. Bloomfield, Timothy S. Cale
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
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We use grain-focused models to study grain boundary (GB) migration (GBM) in polycrystalline Cu vias that interconnect MLM layers in 3D ICs. Curvature-driven GB velocities are calculated by PLENTE [
1
]–[
3
] using the local mean curvature of the GBs, as described in Ref. 2. We use Comsol Multiphysics [
4
] to calculate GB velocities due to thermally induced strain energy jumps across GBs [
5
]. The thermo-mechanical calculations needed for this are made using model structures that combine continuum models and grain-continuum (GC) models (see [
1
]–[
3
], [
5
]); we call these ‘hybrid’ grain-continuum (HGC) models. Curvature driven GB dominates in this work; however, there are uncertainties in the absolute stress values used and how the relative magnitudes of these phenomena will change as the structure evolves.