Anzeige
Erschienen in:
2014 | OriginalPaper | Buchkapitel
Stress Engineering Using Si3N4 for Stiction Free Release of SOI Beams
verfasst von : Suman A. Gupta, Apoorva Shenoy, Monisha, V. Uma, M. N. Vijayaraghavan, Navakanta Bhat
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
We report on the effect of thin silicon nitride (Si
3
N
4
) induced tensile stress on the structural release of 200 nm thick SOI beam, in the surface micro-machining process. A thin (20 nm/100 nm) LPCVD grown Si
3
N
4
is shown to significantly enhance the yield of released beam in wet release technique. This is especially prominent with increase in beam length, where the beams have higher tendency for stiction. We attribute this yield enhancement to the nitride induced tensile stress, as verified by buckling tendency and resonance frequency data obtained from optical profilometry and laser doppler vibrometry.