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Erschienen in: Journal of Materials Science: Materials in Electronics 9/2015

01.09.2015

Structural and opto-electrical properties of Al doped ZnO sputtered thin films

verfasst von: Z. Laghfour, T. Ajjammouri, S. Aazou, S. Refki, D. V. Nesterenko, A. Rahmouni, M. Abd-Lefdil, A. Ulyashin, A. Slaoui, Z. Sekkat

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 9/2015

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Abstract

Transparent and conductive aluminum-doped zinc oxide (AZO) thin films with high preferential c-axis orientation have been deposited on glass substrates by radio frequency magnetron sputtering method of ZnO and DC magnetron sputtering of Al. Structural, surface morphology, optical and electrical properties of ZnO thin films were studied by X-ray diffraction, scanning electron microscope, ultraviolet–visible spectrophotometer, surface plasmon spectroscopy and Hall effect measurements. The results show that AZO films are polycrystalline and exhibit the hexagonal wurzite crystal structure with a preferred orientation along (002) direction. When DC sputtering power supplied to Al target increases, the crystallinity decreases while the electrical resistivity increases. The average measured transmittance exceeded 75 % in the visible range for all AZO thin films. The band gap values increase with decreasing the Al concentrations.

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Metadaten
Titel
Structural and opto-electrical properties of Al doped ZnO sputtered thin films
verfasst von
Z. Laghfour
T. Ajjammouri
S. Aazou
S. Refki
D. V. Nesterenko
A. Rahmouni
M. Abd-Lefdil
A. Ulyashin
A. Slaoui
Z. Sekkat
Publikationsdatum
01.09.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 9/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3277-8

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