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Erschienen in: Journal of Materials Science: Materials in Electronics 1/2017

12.08.2016

Structural and thermoelectric properties of Al-doped ZnO thin films grown by chemical and physical methods

verfasst von: Thong Quang Trinh, Tinh Trong Nguyen, Doanh Viet Vu, Dang Hai Le

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2017

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Abstract

Aluminum doped zinc oxide (AZO) thin films have become technologically important materials due to their application potential for thermoelectric devices. In this paper, AZO thin films are deposited on the glass substrates using the solution derived by sol–gel route for dip-coating cycles and the radio-frequency sputtering process. The crystalline structure of two types of AZO films is characterized by X-ray diffraction exhibiting the typical hexagonal wurzite structure of ZnO. The rough surface of the heat treated films are observed by the SEM image. The average grain size of obtained films is evaluated based on these investigations showing they are consistent with each other. The sheet resistivity and Seebeck coefficient are measured between room temperature and 400 °C and used to determine the electrical conductivity and power factor of all films. The obtained results provide the advantages and disadvantages of the prepared films by each method for aiming at thermoelectrical applications.

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Metadaten
Titel
Structural and thermoelectric properties of Al-doped ZnO thin films grown by chemical and physical methods
verfasst von
Thong Quang Trinh
Tinh Trong Nguyen
Doanh Viet Vu
Dang Hai Le
Publikationsdatum
12.08.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 1/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-5516-z

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