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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 12/2020

07.05.2020

Structural features and energy harvester device applications of textured 0.675 PMN–0.325 PT piezoceramics

verfasst von: Ayse Berksoy-Yavuz, Umut Savacı, Servet Turan, Sedat Alkoy, Ebru Mensur-Alkoy

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2020

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Abstract

In the current study, textured lead magnesium niobate–lead titanate solid solution with composition 0.675Pb(Mg1/3Nb2/3)O3–0.325PbTiO3 (0.675PMN–0.325PT) has been fabricated with 0.7 mol% manganese (Mn) doping to enhance the soft character and the figure of merit (FOM). Random and textured PMN–PT plates were prepared by tape casting where 1 vol% plate-like barium titanate (BaTiO3) single-crystal templates were added to induce texture. A detailed structural investigation using scanning/transmission electron microscopy (STEM) and precession electron diffraction techniques has been conducted to establish the orientational relationship between the PMN–PT matrix and the BT templates. The FOM of textured and doped PMN–PT was found to increase for almost fourfold compared to random undoped case. Characterization of the energy harvesting (EH) performance of unimorph EH devices indicated an over twofold increase in the output power of the doped and textured case in comparison to the undoped and random PMN–PT ceramics.
Vorheriger Artikel Synthesis and analysis of anodic aluminum oxide-nanopore structure on Al substrates for efficient thermal management in electronic packaging
Nächster Artikel The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

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Metadaten
Titel
Structural features and energy harvester device applications of textured 0.675 PMN–0.325 PT piezoceramics
verfasst von
Ayse Berksoy-Yavuz
Umut Savacı
Servet Turan
Sedat Alkoy
Ebru Mensur-Alkoy
Publikationsdatum
07.05.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03510-8

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